Taiwan Semiconductor Manufacturing Comp. Ltd.

Wei-Che Tsai

Hsin-Hung Chen

A semiconductor device includes a gate structure on a substrate; a protection layer on the gate structure; a source/drain region adjacent to the gate structure; and an interconnect plug on the source/drain region. The gate structure includes a gate electrode including a top surface; and a sidewall spacer interfacing a sidewall of the gate electrode. The protection layer covers at least a first portion of the top surface and the sidewall spacer. The protection layer is interposed between the interconnect plug and the gate electrode.

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Hsinchu, Taiwan

Wei-Che Tsai