Taiwan Semiconductor Manufacturing Comp. Ltd.

Wei-Che Hsu

Alexander Kalnitsky

Yu-Chung Yang

Yung-Chih Tsai

A semiconductor structure includes a substrate and a dielectric material disposed over the substrate. A void is disposed within the dielectric material. A dielectric liner is disposed along inner sidewalls of the dielectric material proximate to the void. An inner surface of the dielectric liner defines an outer extent of the void, and the dielectric liner includes an inner liner layer and an outer liner layer.

Semiconductor structure and manufacturing method thereof

A semiconductor structure includes a substrate, a gate structure disposed over the substrate, a dielectric material disposed over the substrate and the gate structure, a conductive structure extending within the dielectric material, and a void extending within the dielectric material and disposed over the gate structure.

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Tainan, Taiwan

Wei-Che Hsu