United Microelectronics Corp.

Wei-Chang Liu

Shen-De Wang

Wang Xiang

Zhen Chen

Wei Ta

Yi-Shan Chiu

Chia-Ching Hsu

Chun-Sung Huang

Yuan-Hsiang Chang

Chuan Sun

Ling-Gang Fang

Shang Xue

Yung-Lin Tseng

A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a first gate, a gate dielectric layer, a pair of second gates, a first spacer, and a second spacer. The first gate is disposed on a substrate. The gate dielectric layer is disposed between the first gate and the substrate. The pair of second gates are disposed on the substrate and respectively located at two sides of the first gate, wherein top surfaces of the pair of second gates are higher than a top surface of the first gate. The first spacer is disposed on sidewalls of the pair of second gates protruding from the top surface of the first gate and covers the top surface of the first gate. The second spacer is disposed between the gate dielectric layer and the pair of second gates, between the first gate and the pair of second gates, and between the first spacer and the pair of second gates.

Semiconductor device with high-resistance gate

A memory structure including a substrate, at least one stacked gate structure, a first spacer conductive layer, and a first contact is provided. The stacked gate structure is located on the substrate and includes a control gate. The control gate extends in a first direction. The first spacer conductive layer is located on one sidewall of the control gate and is electrically insulated from the control gate. The first spacer conductive layer includes a first merged spacer portion and a first non-merged spacer portion. A line width of the first merged spacer portion is greater than a line width of the first non-merged spacer portion. The first contact is connected to the first merged spacer portion. The memory structure can have a larger process window of contact.

Memory structure

A method for forming a semiconductor device is provided, including providing a substrate having a first area comprising first semiconductor structures and a second area, wherein one of the first semiconductor structures comprises a memory gate made of a first polysilicon layer, and a second semiconductor structure comprises a second polysilicon layer disposed within the second area on the substrate; forming an organic material layer on the first semiconductor structures within the first area and on the second polysilicon layer within the second area; and patterning the organic material layer to form a patterned organic material layer, and the organic material layer exposing the memory gates of the first semiconductor structures, wherein a first pre-determined region and a second pre-determined region at the substrate are covered by the patterned organic material layer.

Method for forming a semiconductor device

Provided is a semiconductor device including a memory gate structure and a select gate structure. The memory gate structure is closely adjacent to the select gate structure. Besides, an air gap encapsulated by an insulating layer is disposed between the memory gate structure and the select gate structure.

Semiconductor device and method of forming the same

A semiconductor process is described. A semiconductor substrate having a memory area, a first device area and a second device area is provided. A patterned charge-trapping layer is formed on the substrate, covering the memory area and the second device area but exposing the first device area. A first gate oxide layer is formed in the first device area. The charge-trapping layer in the second device area is removed. A second gate oxide layer is formed in the second device area.

Growing community of inventors

Singapore, Singapore

Wei-Chang Liu