Crossbar, Inc.

Wee Chen Gan

Sundar Narayanan

Natividad Vasquez

Wei Ti Lee

Fabrication of resistive switching memory devices is herein provided. By way of example, a method for a two-step etch for fabricating a non-volatile resistive memory device is disclosed. In another example, a method for a three-step etch for fabricating a non-volatile resistive memory device is provided. Still other embodiments disclose a method for fabricating a non-volatile metal nitrogen/metal oxygen resistive switching memory device. Further embodiments disclose a method for fabricating a volatile resistive switching selector device. Processes for forming protective spacers in conjunction with fabricating a disclosed resistive memory device are also provided.

Resistive switching memory devices and method(s) for forming the resistive switching memory devices

Resistive switching memory cells having filament-based switching mechanisms are provided. By way of example, resistive switching memory cells having resistive filaments constrained to a core of the cell are disclosed. In other examples, methods for fabricating resistive switching memory cells to constrain a conductive filament formed in the resistive switching memory cell to a central portion of core of the cell are disclosed.

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Cupertino, CA, United States of America

Wee Chen Gan