Northrop Grumman Systems Corporation

Wayne Stephen Miller

Monica P Lilly

Matthew J Walker

John Xavier Przybysz

Robert Samuel Howell

Andre E Berghmans

Jeffrey David Hartman

Patrick Bruckner Shea

James T Kelliher

Matthew S Torpey

Benjamin Andrew Copley

William J Sweet

Silai V Krishnaswamy

Joseph A Payne

An apparatus includes a top conductive layer of on an integrated circuit waveguide filter and a bottom conductive layer. The top and bottom conductive layers are coupled via a plurality of couplers that form an outline of the waveguide filter. A dielectric substrate layer is disposed between the top conductive layer and the bottom conductive layer of the integrated circuit waveguide filter. The dielectric substrate layer has a relative permittivity, &#x3b5;r that affects the tuning of the integrated circuit waveguide filter. At least one tunable via includes a tunable material disposed within the dielectric substrate layer and is coupled to a set of electrodes. The set of electrodes enable a voltage to be applied to the tunable material within the tunable via to change the relative permittivity of the dielectric substrate layer and to enable tuning the frequency characteristics of the integrated circuit waveguide filter.

Voltage controlled tunable filter

A radio-frequency (RF) carbon-nanotube (CNT) field effect transistor (FET) device. The device includes a source contact, a drain contact, semi-conducting CNTs positioned between the source and drain contacts, high-&#x3ba; gate dielectric, and a local backgate positioned below the semi-conducting CNTs, in which the local backgate is capable of RF performance and is capable of being used in a backgate burnout process used to enhance the semiconducting to metallic tube ratio of the device.

Radio-frequency carbon-nanotube field effect transistor devices with local backgates and methods for making same

One example includes a semiconductor device. The semiconductor device include a carbon nanotube substrate, a self-assembled monolayer, and a gate oxide. The self-assembled monolayer overlies the carbon nanotube substrate and is comprised of molecules each including a tail group, a carbon backbone, and a head group. The gate oxide overlies the self-assembled monolayer, wherein the self-assembled monolayer forms an interface between the carbon nanotube substrate and the gate oxide.

Self-assembled monolayer overlying a carbon nanotube substrate

A cobalt-carbon (Co&#x2014;C) eutectic metal alloy ohmic contact for a radio-frequency (RF) carbon nanotube (CNT) field effect transistor (FET) device and a method of manufacturing same are disclosed. Embodiments of a method include providing a graphite crucible, placing Co and a C source within the graphite crucible, heating the graphite crucible containing the Co and C source such that the Co and C source combine with graphite from the graphite crucible to thereby form a Co&#x2014;C eutectic metal alloy, and creating an ohmic contact by depositing the Co&#x2014;C eutectic metal alloy directly on top surfaces of CNTs of a RF CNT FET device such that the Co&#x2014;C eutectic metal alloy is in direct contact with the CNTs. The Co&#x2014;C eutectic metal alloy ohmic contact formed in this manner is consistently stabile and uniform and functions as a high work function layer that also serves as an adhesion layer to the CNTs.

Carbon mixture ohmic contact for carbon nanotube transistor devices

Cobalt-carbon eutectic metal alloy ohmic contact for carbon nanotube field effect transistors

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Hanover, MD, United States of America

Wayne Stephen Miller