Varian Semiconductor Equipment Associates, Inc.

Wayne D LeBlanc

Craig Richard Chaney

Neil J Bassom

Alexander S Perel

Robert C Lindberg

Antonella Cucchetti

David P Sporleder

James Young

A technique for ion implanting a target is disclosed. In accordance with one exemplary embodiment, the technique may be realized as a method for ion implanting a target, the method comprising: providing a predetermined amount of processing gas in an arc chamber of an ion source, the processing gas containing implant species and implant species carrier, where the implant species carrier may be one of O and H; providing a predetermined amount of dilutant into the arc chamber, wherein the dilutant may comprise a noble species containing material; and ionizing the processing gas and the dilutant.

Technique for ion implanting a target

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Danvers, MA, United States of America

Wayne D LeBlanc