At+t Corp.

Fab-tech Incorporated

Wayne A Smith

Walter Riley Buchanan

Roman J Hamerski

Christopher Daniel Hruska

Todd M McGinn

A diode ( ), having first and second conductive layers ( ), a conductive pad ( ), and a distributed reverse surge guard ( ), provides increased protection from reverse current surges. The surge guard ( ) includes an outer loop ( ) of P -type surge guard material and an inner grid ( ) of linear sections ( ) which form a plurality of inner loops extending inside the outer loop ( ). The surge guard ( ) distributes any reverse current over the area of the conductive pad ( ) to provide increased protection from transient threats such as electrostatic discharge (ESD) and during electrical testing.

Distributed reverse surge guard

Disclosed is an electroexplosive device including a semiconductor igniter chip with improved crack detection features and which fires in a known location. The chip includes diffused regions so that cracks formed therethrough will result in high leakage currents which are easily detected.

Growing community of inventors

Liberty, MO, United States of America

Wayne A Smith