Stanley Electric Co., Ltd

Mitsubishi Electric Corporation

Yazaki Corporation

Wataru Tamura

Takuya Kazama

Yasuyuki Miyake

Chiharu Sasaki

Keishi Jinno

Kouichi Ohyama

Mitsunori Nishida

Osamu Nishizawa

Atsushi Muramatsu

Kiyoshi Kanie

Keita Akiyama

Kenji Moriyama

Takayuki Omori

Single-phase manganese oxide particles having a wurtzite crystal structure. The particles can be obtained by thermally decomposing a compound containing manganese. In this procedure, a reducing agent consisting of at least one of a polyol-based material and an ethylene glycol stearate-based material is added as an additive to the reaction system. It is heated at a first temperature (200° C. or lower) under a reduced pressure atmosphere, then the temperature is raised, and the product is heated at a temperature higher than the first temperature under an inert gas atmosphere.

Wurtzite-type manganese oxide particles and method for producing same

A method for manufacturing Group-III nitride semiconductor nanoparticles includes synthesizing Group-III nitride semiconductor nanoparticles having a particle size of 16 nm or less by reacting materials containing one or more Group-III elements M in a liquid phase, wherein a coordination solvent is used, and trimethyl M is used as at least one Group-III element material among the materials containing one or more Group-III elements M.

Group-III nitride semiconductor nanoparticles, core-shell-type particles, and method for manufacturing same

A quantum dot includes a nano-seed particle having a particular crystal plane exposed, and a first epitaxial layer formed on the particular crystal plane of the nano-seed particle.

Quantum dot

Provided are group-III nitride nanoparticles that prevent the piezoelectric field caused by strains on the nanoparticles, achieving good luminous efficiency. The group-III nitride nanoparticle represented by AlGaInN (0&#x2264;x, y, z&#x2264;1) incorporating two crystal structures; a wurtzite structure and a zincblende structure, in a single particle. As another example, the group-III nitride nanoparticle has a core-shell structure with a core and a shell, in which the particle constituting the core contains two crystal structures; the wurtzite structure and the zincblende structure, in the particle. Nanoparticles containing the two crystal structures can be produced by using a phosphorus-containing solvent as a reaction solvent, and the mixture ratio of the two crystal structures, (wurtzite structure)/(zincblende structure), is 20/80 or higher.

Group-III nitride semiconductor nanoparticles and production method thereof

A quantum dot manufacturing method comprises (a) dispersing, in a solvent, nano-seed particles whose crystal planes are exposed, and (b) growing semiconductor layers on the exposed crystal planes of the nano-seed particles in the solvent.

Method for manufacturing quantum dot

A quantum dot having core-shell structure, including a core formed of ZnOSof wurtzite crystal structure of hexagonal crystal system; a first shell covering the core, and formed of AlGaInN of wurtzite crystal structure of hexagonal crystal system; and a second shell covering the first shell, and formed of ZnOSof wurtzite crystal structure of hexagonal crystal system. At least one of v, x, y, and z is not zero and is not one; differences between the lattice constants along a-axis of the core, the first shell and the second shell are not greater than 1%; and the core, the first shell and the second shell form band offset structure of type II.

Quantum dot having core-shell structure

A circuit board is sealed and housed in a casing including a base and a cover, a connector housing including a partition wall is mounted on the circuit board, and an electrical connection between the interior and the exterior of the casing is established. A water-repellent filter is fixed to an inner surface of the partition wall, an outer surface portion of the water-repellent filter is opened to atmosphere via the breath ventilation hole, and an atmospheric opening surface thereof is formed such that the atmospheric opening surface being wetted directly with water is avoided by a poured water blocking wall and water barrier walls. A position where the poured water blocking wall is provided is changed by an insert mold in response to the direction of the mounting surface of the base.

Waterproof type control apparatus

A case configured with a base and a cover watertightly contains a circuit board, and a connector housing having a diaphragm is mounted in the circuit board so that the inside and the outside of the case are electrically connected with each other; an outer ring-shaped circumferential wall is provided on the outer surface of the diaphragm, and a protrusion portion having first and second ventilation holes is provided at the side surface of the outer ring-shaped circumferential wall; one end of each of the first and second ventilation holes communicates with the outer surface portion of a water-repellent filter provided on the inner wall surface of the diaphragm, and the other end thereof communicates with the inside of a recess portion that is situated at a side of a mating connector and fits with the protrusion portion.

Waterproof control apparatus

A quantum dot having core-shell structure includes a core formed of ZnOS, and at least one shell covering the core, and formed of AlGaInN, wherein at least one of x, y, and z is not zero and is not one.

An object is to prevent a water-repellent filter, which performs ventilation between the interior and the exterior of a sealed casing and prevents entry of water, from being wetted directly with water. A circuit board is sealed and housed in a casing including a base and a cover, a connector housing including a partition wall is mounted on the circuit board, and an electrical connection between the interior and the exterior of the casing is established. A water-repellent filter is fixed to an inner surface of the partition wall, and an outer surface portion of the water-repellent filter is opened to atmosphere via first and second ventilation holes and first and second connection ventilation holes. Therefore, the water-repellent filter can be avoided from being wetted directly with water.

A semiconductor light emitting device comprises a supporting substrate that has light reflecting characteristics; a wavelength conversion layer that is disposed on the supporting substrate, and contains semiconductor nanoparticles developing a quantum size effect; an optical semiconductor laminate that is disposed on the wavelength conversion layer and has light emitting characteristics; and a photonic crystal layer that is disposed on the optical semiconductor laminate, and that has first portions having a first refractive index and second portions having a second refractive index different from the first refractive index, the first portions and the second portions being arranged in a two-dimensional cyclic pattern.

Semiconductor light emitting device

There is provided a light-emitting element having a semiconductor film which includes a p-type current-spreading layer of GaInP or GaP; a first p-clad of AlInP; a second p-clad of AlGaInP; an active layer including of GaInP or AlGaInP; a first n-clad having a carrier density of 1&#xd7;10cmto 5&#xd7;10cm; a second n-clad having a carrier density of 1&#xd7;10cmto 5&#xd7;10cm; wherein the thickness proportion of the first p-clad in an entire p-clad, is 50% to 80%; the thickness of an entire n-clad is equal to or greater than 2 &#x3bc;m; the thickness proportion of the first n-clad in the entire n-clad is equal to or greater than 80%; and the thickness of the second n-clad is equal to or greater than 100 nm.

Semiconductor light-emitting element and method for manufacturing semiconductor light-emitting element

A semiconductor light emitting device comprising a semiconductor layer of (AlGa)InP (0&#x3c;x&#x2266;1, 0&#x2266;y&#x2266;1) that consists of a first semiconductor layer of a first electrical conduction type, an active layer of a multiple quantum well structure containing a barrier layer and a distortion-containing well layer, a second semiconductor layer of a second electrical conduction type, and a third semiconductor layer of the second electrical conduction type, constructed in this order in the form of a generally flat laminate; a first electrode electrically connected to the first semiconductor layer; and a second electrode electrically connected to the third semiconductor layer; wherein part of the active layer facing the second semiconductor layer side is inclined from the surface of the active layer toward its normal, and the third semiconductor layer has a composition of GaInP (0&#x2266;z&#x2266;0.35).

Semiconductor light emitting device and a production method thereof

A semiconductor light emitting device includes a first cladding layer, a second cladding layer, and an active layer formed between the first and second cladding layers. A diffusion control layer includes an intermediate layer and a first transparent conductive layer provided on the second cladding layer in this order. The semiconductor light emitting device further includes a second transparent conductive layer having an impurity in a concentration lower than an impurity concentration of the diffusion control layer, and a third transparent conductive layer having an impurity in a concentration higher than the impurity concentration of the second transparent conductive layer. The boundary between the intermediate layer and the first transparent conductive layer is a lattice mismatch interface.

Semiconductor light emitting device and method for manufacturing the same

A semiconductor light-emitting apparatus that has high luminous efficiency and a high breakdown voltage as well as reduced breakdown voltage variation among lots. The semiconductor light-emitting apparatus includes a first clad layer and a second clad layer. An average dopant concentration of the second clad layer is lower than that of the first clad layer. The light-emitting apparatus also includes an active layer having an average dopant concentration of 2&#xd7;10to 4&#xd7;10cm. The active layer is made of (AlGa)InP (0&#x3c;x&#x2266;1, 0&#x2266;y&#x2266;1). The light-emitting apparatus also includes a third clad layer, and a second-conducting-type semiconductor layer made of GaInP (0&#x2266;x&#x3c;1). If d is the layer thickness of the second clad layer (nm) and Nis the average dopant concentration of the second clad layer (cm), then d&#x2267;1.2&#xd7;N&#xd7;10+150 is satisfied.

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Tokyo, Japan

Wataru Tamura