Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Kioxia Corporation

Ricoh Company, Ltd.

Gree, Inc.

Wataru Sakamoto

Tatsuya Kato

Fumitaka Arai

Ryota Suzuki

Fumie Kikushima

Katsuyuki Sekine

Yuta Watanabe

Toshiyuki Iwamoto

Mikiko Mori

Akio Kaneko

Toshihiro Yoshinuma

Tatsuya Okamoto

Satoshi Nagashima

Hiroshi Itokawa

Hiroshi Nakaki

Ken Onodera

Hiroyuki Nitta

Hanae Ishihara

Shinichi Sotome

Mitsuhiro Noguchi

Takashi Kobayashi

Scott Richard Johnson

Takashi Izumida

Stuart James Boland

Hideto Takekida

Sho Sawahata

Osamu Matsuura

Hideaki Nishimura

Takayuki Okamura

Hideki Inokuma

Kenta Yamada

Noboru Ooike

Ryosuke Nishida

Ken Komiya

Kazuma Takahashi

Ryosuke Isomura

A semiconductor device of the embodiment includes a stacked body, a first insulating layer, first and second staircase portionsand a second insulating layerThe stacked body includes a first electrode layer(WLDD) and a second electrode layer(SGD). The first and second staircase portionsare provided in a first end portiona second end regionThe second insulating layerextends in the X-direction. The second insulating layer divides the second electrode layer(SGD) in the X-direction direction. A length Lin the X-direction of the second insulating layeris longer than a length Lin the x-direction of the second electrode layer(SGD) and shorter than a length Lin the X-direction of the first electrode layer(WLDD).

Semiconductor device for preventing an increase in resistance difference of an electrode layer

A semiconductor memory device according to an embodiment, includes a plurality of semiconductor pillars extending in a first direction and being arranged along a second direction crossing the first direction, two interconnects extending in the second direction and being provided on two sides of the plurality of semiconductor pillars in a third direction crossing the first direction and the second direction, and an electrode film disposed between each of the semiconductor pillars and each of the interconnects. The two interconnects are drivable independently from each other.

Stacked-type semiconductor memory device

According to one embodiment, a semiconductor device includes a stacked body, a columnar portion, a first charge storage portion, and a second charge storage portion. The stacked body includes a plurality of electrode layers stacked in a first direction. The plurality of electrode layers includes a first electrode layer, and a second electrode layer. The columnar portion extends in the first direction in the stacked body. The first charge storage portion provides between the first electrode layer and the columnar portion. The second charge storage portion provides between the second electrode layer and the columnar portion. A first thickness in a second direction intersecting the first direction of the first charge storage portion between the first electrode layer and the columnar portion is thicker than a second thickness in the second direction of the second charge storage portion between the second electrode layer and the columnar portion.

Semiconductor device

Systems and methods for dryer rollers of a print system with increasing wrap angles. In one embodiment a dryer includes a turning device configured to rotate about an axis, and to guide a web of print media. The dryer also includes rollers configured to transport the web from an entrance of the dryer to the turning device. The rollers include a series of three or more rollers positioned in the dryer to consecutively increase an amount of contact area with the web as the web travels toward the turning device.

Dryer rollers of a print system with increasing contact area

A semiconductor memory device includes two first electrode films, a first column and a second insulating film. The two first electrode films extend in a first direction and are separated from each other in a second direction. The first column is provided between the two first electrode films and has a plurality of first members and a plurality of insulating members. Each of the first members and each of the insulating members are arranged alternately in the first direction. One of the plurality of first members has a semiconductor pillar, a second electrode film and a first insulating film provided between the semiconductor pillar and the second electrode film. The semiconductor pillar, the first insulating film and the second electrode film are arranged in the second direction. The second insulating film is provided between the first column and one of the two first electrode films.

Semiconductor memory device

A non-transitory computer readable recording medium has stored thereon instructions to be executed on a computer providing terminal device with a game. The recording medium includes, for example, a main program described with Japanese text data, and language data in which English text data is associated with identification information (hash value). The instructions cause the computer to perform the steps of: setting a language to be displayed on a display section; generating a retrieval key by performing data processing on the first data to be displayed that is included in the main program when the second language is set as a language to be displayed; and extracting the second data to be displayed that includes the identification information corresponding to the generated key, and replacing the first data to be displayed with the second data to be displayed to display the second data to be displayed on the display section.

Non-transitory computer readable recording medium, computer control method and computer device for facilitating multilingualization without changing existing program data

A semiconductor memory device according to an embodiment, includes a semiconductor pillar extending in a first direction, a first electrode extending in a second direction crossing the first direction, a second electrode provided between the semiconductor pillar and the first electrode, a first insulating film provided between the first electrode and the second electrode and on two first-direction sides of the first electrode, a second insulating film provided between the second electrode and the first insulating film and on two first-direction sides of the second electrode, a third insulating film provided between the second electrode and the semiconductor pillar, and a conductive film provided inside a region interposed between the first insulating film and the second insulating film.

Semiconductor memory device and method for manufacturing same

A semiconductor memory device according to an embodiment, includes a semiconductor pillar extending in a first direction, a first electrode extending in a second direction crossing the first direction, a second electrode provided between the semiconductor pillar and the first electrode, a first insulating film provided between the semiconductor pillar and the second electrode, a second insulating film provided between the first electrode and the second electrode and on two first-direction sides of the first electrode, and a conductive film provided between the second electrode and the second insulating film, the conductive film not contacting the first insulating film.

According to one embodiment, a semiconductor memory device includes a substrate, semiconductor pillars, first electrode films, a second electrode film, a first insulating film, a second insulating film, and a contact. The semiconductor pillars are provided on the substrate, extend in a first direction crossing an upper surface of the substrate, and are arranged along second and third directions being parallel to the upper surface and crossing each other. The first electrode films extend in the third direction. The second electrode film is provided between the semiconductor pillars and the first electrode films. The first insulating film is provided between the semiconductor pillars and the second electrode film. The second insulating film is provided between the second electrode film and the first electrode films. The contact is provided at a position on the third direction of the semiconductor pillars and is connected to the first electrode films.

Stacked type semiconductor memory device and method for manufacturing the same

Stacked type semiconductor memory device

A semiconductor memory device according to an embodiment, includes a semiconductor pillar extending in a first direction, a first electrode extending in a second direction crossing the first direction, a second electrode provided between the semiconductor pillar and the first electrode, a first insulating film provided between the semiconductor pillar and the second electrode, and a second insulating film provided between the first electrode and the second electrode. The second electrode includes a thin sheet portion disposed on the first electrode side, and a thick sheet portion disposed on the semiconductor pillar side. A length in the first direction of the thick sheet portion is longer than a length in the first direction of the thin sheet portion.

A semiconductor device according to an embodiment includes two semiconductor pillars, a connection member connected between the two semiconductor pillars, and a contact connected to the connection member. There is not a conductive member disposed between the two semiconductor pillars.

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Yokkaichi, Japan

Wataru Sakamoto