Kabushiki Kaisha Toshiba

Renesas Electronics Corporation

Canon Kabushiki Kaisha

Thk Co., Ltd.

Sony Corporation

Nec Corporation

Soko Co., Ltd.

Wataru Saito

Syotaro Ono

Ichiro Omura

Yasunobu Saito

Miho Watanabe

Hiroshi Ohta

Hidetoshi Fujimoto

Akira Yoshioka

Masaru Izumisawa

Shunji Taniuchi

Yasuto Sumi

Toshiyuki Naka

Hiroaki Yamashita

Tetsuya Ohno

Nana Hatano

Takao Noda

Hiromichi Ohashi

Kenichi Tokano

Tomohiro Nitta

Masakatsu Takashita

Wataru Sekine

Munehisa Yabuzaki

Tsuneo Ogura

Masakazu Yamaguchi

Tetsuo Matsuda

Satoshi Aida

Kiyoshi Kimura

Yorito Kakiuchi

Shigeo Kouzuki

Yoshihiko Saito

Hironori Yoshioka

Hiroyuki Irifune

Junji Suzuki

Fukashi Morishita

Yusuke Kawaguchi

Masaaki Onomura

Hitoshi Kobayashi

Satoshi Yanagisawa

Hideki Okumura

Kozo Kinoshita

Yoshihiro Yamaguchi

Hiroshi Iwai

Takashi Shinohe

Masahiko Kuraguchi

Akira Tanaka

Soichi Tanaka

Koichi Tachibana

Satoshi Kondo

Yasuhiko Kokami

Toru Sugiyama

Shingo Sato

Keisuke Kimura

Masanobu Tsuchitani

Yoshihiro Kudo

Akihiko Osawa

Kouhei Morizuka

Tomofumi Ohashi

Hideyuki Tajima

Harald Walter

Hironari Hoshino

Kuniyuki Kakushima

Takuya Miyazaki

Sho Iwashiro

Manabu Kimura

Masanori Otsuka

Bin Zhao

Takeshi Goto

Kazuo Tsutsui

Yoshitaka Jingu

Shizue Matsuda

Masahiko Shiomi

Mika Oki

Marius Tillman

Tamil Selvan Rajagopal

Manjunatha Madivala

Vadim Kirsch

Junya Horishima

Yosuke Miyashita

Syotaro Uno

Hitoshi Wakabayashi

Yauto Sumi

Shoichiro Kurushima

Marius Tillmann

A programmable gain amplifier provided in a semiconductor device includes a fully differential amplifier configured to amplify differential input voltages having an offset voltage. First and second correction voltages are input to a non-inverting input node and an inverting input node of the fully differential amplifier via first and second resistance elements, respectively.

Semiconductor device and imaging device

A semiconductor device includes a digital-analog converter provided with a plurality of current cells, and a test circuit electrically connected to the digital-analog converter to test the digital-analog converter. The test circuit includes: a charge information holding circuit that holds, as differential charge information, a difference value between a first charge according to a first current and a second charge according to a second current by at least one or more current cells among the plurality of current cells; a reference voltage generation circuit that generates a reference voltage to be comparative object; and a comparison circuit that compares a determination voltage according to the differential charge information and the reference voltage to output a comparison result.

Semiconductor device and control method for the same

A client, based on image data to be printed obtained from a Web application, generates preview image data for which a first color-conversion process for causing a display on a display unit is performed, and based on the preview image data, causes first preview image to be displayed on a display unit, and transmits to a server image data to be printed. The server, based on the image data to be printed, generates color-converted image data for which a second color-conversion process printing on a printing device is performed. In the client, based on the color-converted image data being generated, causes a second preview image to be displayed based on the color-converted image data instead of the preview image data.

System, method, and control method

A chassis control arm for a wheel suspension has a control arm body, a spring abutment and an actuator which is arranged between the control arm body and the spring abutment and with which the position of the spring abutment relative to the control arm body can be adjusted. The actuator comprises a lifting gear which is configured as a movement thread and which includes a lifting spindle on which the spring abutment is arranged or on which the spring abutment is axially movably mounted.

Chassis control arm

The album creation application of the present disclosure displays image data, to which trimming is performed, and a template, which includes a slot in which the image data is arranged, so that a slot and image data to be arranged in the slot are selected by use of an input device. Position information of a point of interest in the image to be arranged in the slot is obtained. Composition patterns applicable to the image with designation of the point of interest are presented to the user, and the composition pattern to be applied, which is selected by the user from among the presented composition patterns, is obtained. Trimming is performed based on the point of interest and the selected composition pattern selected. The trimmed images are listed, so that multiple trimmed images are presented to the user as trimming proposals.

Information processing method, storage medium, and information processing apparatus

An information processing method obtains image data representing an image laid out on a page, and sets, in the image, a target region on which to perform predetermined processing to change a pixel count, based on layout information pertaining to a layout of the image on the page. Based on this setting, the predetermined processing is performed on the target region in the image.

Information processing method, information processing system, and storage medium that perform predetermined processing on a target region in an image based on a target region setting

The ball screw device includes: a screw shaft having an N number (N is an integer equal to or larger than 2) of rolling grooves having the same lead; balls configured to roll in the rolling grooves; and a nut member, which is assembled to the screw shaft through intermediation of the balls, and includes one or a plurality of endless circulation paths configured to circulate the balls around the screw shaft. Each of the endless circulation paths of the nut member includes: an N number of load portions, which are configured to allow the balls to roll thereon while bearing a load, and correspond to the N number of rolling grooves, respectively; and an N number of no-load portions, which each couple adjacent ones of the load portions, and are configured to allow the balls to move between the N number of rolling grooves.

Ball screw device

The present invention provides a current detection circuit, semiconductor device, and a semiconductor system suitable for improving a current sensing accuracy. According to one embodiment, the current detection circuitcomprises a sense transistor Trthrough which a first sense current proportional to the current flowing through the drive transistor MNflows, an operational amplifier AMPfor amplifying the potential difference of the voltage of the external output terminal OUT and the source voltage of the sense transistor Trfor outputting the first sense current, a transistor Trprovided in series with the sense transistor Trand to which the output voltage of the operational amplifier AMPis applied to the gate, and a switch SWprovided between the external output terminal OUT and the source of the sense transistor Trand turned on when the drive transistor MNis turned off.

Current detection circuit, semiconductor device, and semiconductor system

A semiconductor device includes a first-conductivity-type semiconductor layer which includes a cell region portion and a junction terminating region portion. The junction terminating region portion is a region portion which is positioned in an outer periphery of the cell region portion to maintain a breakdown voltage by extending a depletion layer to attenuate an electric field.

Semiconductor device with super junction region

According to one embodiment, a current detection circuit () includes: a detection resistor (Rs) provided between a solenoid valve () and a solenoid driver (); an amplification unit () configured to amplify a detected voltage of the detection resistor (Rs); an AD converter () that is driven by a reference voltage (Vref) generated based on a reference current (Iref) and configured to convert an output voltage from the amplification unit () into a digital value and output the digital value as a detected current value (D); and a correction unit configured to perform a correction on the detected current value (D). The correction unit includes: a temperature sensor (); a storage unit () configured to store information about temperature characteristics of the detected current value (D) generated due to temperature characteristics of a reference current in each of two or more different temperature regions; and an operation unit configured to apply, to the detected current value (D), a first correction coefficient calculated based on a detection result of the temperature sensor () and information about temperature characteristics of the detected current value (D) stored in the storage unit ().

Current detection circuit and semiconductor device including the same

A power semiconductor device is disclosed, which comprises a semiconductor layer including a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type, which are periodically formed in the lateral direction, and a power semiconductor element including the semiconductor layers that are formed periodically, wherein a distribution of an amount of an impurity in a vertical direction of the first semiconductor layer differs from a distribution of an amount of an impurity in the vertical direction of the second semiconductor layer.

Semiconductor device with alternating conductivity type layers having different vertical impurity concentration profiles

Semiconductor device

A first semiconductor device of an embodiment includes a first semiconductor layer of a first conductivity type, a first control electrode, an extraction electrode, a second control electrode, and a third control electrode. The first control electrode faces a second semiconductor layer of the first conductivity type, a third semiconductor layer of a second conductivity type, and a fourth semiconductor layer of a first conductivity type, via a first insulating film. The second control electrode and the third control electrode are electrically connected to the extraction electrode, and face the second semiconductor layer under the extraction electrode, via the second insulating film. At least a part of the second control electrode and the whole of the third control electrode are provided under the extraction electrode. The electrical resistance of the second control electrode is higher than the electrical resistance of the third control electrode.

According to one embodiment, a nitride semiconductor device includes a first semiconductor layer, a second semiconductor layer, a first electrode, a second electrode, a third electrode, a first insulating film and a second insulating film. The first semiconductor layer includes a nitride semiconductor. The second semiconductor layer is provided on the first layer, includes a nitride semiconductor, and includes a hole. The first electrode is provided in the hole. The second electrode is provided on the second layer. The third electrode is provided on the second layer so that the first electrode is disposed between the third and second electrodes. The first insulating film is provided between the first electrode and an inner wall of the hole and between the first and second electrodes, and is provided spaced from the third electrode. The second insulating film is provided in contact with the second layer between the first and third electrodes.

Nitride semiconductor device and method for manufacturing same

A semiconductor device of this embodiment includes: a first semiconductor layer including AlGaN; a second semiconductor layer provided above the first semiconductor layer, and including undoped or n-type AlGaN; a first and second electrodes provided above the second semiconductor layer; a third semiconductor layer provided above the second semiconductor layer between the first electrode and the second electrode, is at a distance from each of the first and second electrodes, and including p-type AlGaN; a control electrode provided above the third semiconductor layer; a fourth semiconductor layer provided above the third semiconductor layer between the first electrode and the control electrode, is at a distance from the control electrode, and including n-type AlGaN; and a fifth semiconductor layer provided above a portion of the third semiconductor layer between the control electrode and the second electrode, is at a distance from the control electrode, and including n-type AlGaN.

Growing community of inventors

Kanagawa-ken, Japan

Wataru Saito