Tokyo Electron Limited

Tokyo Electron Kabushiki Kaisha

Tokyo Electron Tohoku Kabushiki Kaisha

Fujikin Inc.

Tokyo Electron Tohoku Limited

Tokyo Electron Sagami Kabushiki Kaisha

Tokyo Electron Sagami Limited

Toyko Electron Limited

Tokyo Electron Tohoku Kabushiki

Wataru Okase

Takenobu Matsuo

Yasushi Yagi

Masaaki Hasei

Michio Yamaji

Tsutomu Shinohara

Shuji Moriya

Satoshi Kawachi

Nobukazu Ikeda

Toshihide Yoshida

Osamu Suenaga

Hironori Yagi

Kyungho Park

Yasuyuki Omata

Yasutaka Hayashi

Masayuki Kitamura

Tomohiro Nakata

Takeshi Sakuma

Hiroshi Sato

Takashi Tanahashi

Hiroki Taniyama

Satoshi Nakashima

Takahiro Horiguchi

Eisuke Morisaki

Kazutsugu Aoki

Yoshitsugu Tanaka

Eiichiro Takanabe

Koichiro Kimura

Yoshiyuki Harima

Masamichi Nomura

Yoshinori Kato

Singo Watanabe

Tameyasu Hyakuzuka

Jun Yamauchi

There is provided a fluid control apparatus which can reduce the number of members and can improve the assembling operation efficiency. A pressure indication deviceto be replaced with a relatively-higher frequency is coupled to a base blockexisting thereunder through male screw membersfrom above. An on-off valveto be replaced with a relatively-lower frequency has, at its lower portion, a block-shaped main bodyformed integrally therewith. The main bodyof the on-off valveis coupled to the base blockthrough male screw membersin the forward and rearward directions.

Fluid control apparatus

A pressure type flow rate control reference allows the performance of flow rate calibrations of a flow rate controller on all types of gases, including corrosive gases, at low costs, and also has excellent flow rate control accuracy. The pressure type flow rate control reference includes a pressure controller for adjusting the pressure of a calibration gas from a calibration gas supply source, a first volume provided on the downstream side of a pressure controller, a first connection mouth of an uncalibrated flow rate controller provided on the downstream side of the first volume, a reference pressure type flow rate controller connected to a second connection mouth on the downstream side of the uncalibrated flow rate controller, a second volume provided on the downstream side of a reference pressure type flow rate controller, and an evacuation device provided on the downstream side of the second volume.

Pressure type flow rate control reference and corrosion resistant pressure type flow rate controller used for the same

A plating device and a plating method are provided that are capable of enhancing uniformity in plating on a treatment surface of an object to be treated. The plating device includes: a plating solution bath capable of storing a plating solution and having a first electrode to be immersed in the stored plating solution; a treatment object holding mechanism configured to hold the object to be treated to bring the treatment surface thereof into contact with the plating solution; and a contact disposed in the treatment object holding mechanism and brought into electrical contact with a peripheral edge of the object to be treated so as to make a conductive layer on the treatment surface, which is brought into contact with the plating solution, serve as a second electrode, the contact having a bellows construction or a spring construction movable in a direction facing the object to be treated, and the treatment object holding mechanism being capable of holding the object to be treated while the bellows construction or the like in the contact is in a compressed state. The contact itself is formed as a pliable structure instead of a rigid structure, thereby keeping the contact resistance constant by fluctuation in contact pressure which is controlled to be small even when a slight displacement of the compression direction occurs.

Plating device and plating method

A contact is disposed to come into contact with a metal layer formed on a substrate being treated, the contact being in contact with a surface being treated from an opposite surface through a through hole present in a substrate. Alternatively, a contact is disposed to come into contact with a metal layer formed on a substrate, the contact coming into contact at an approximate center of the substrate. Alternatively, a plurality of needle bodies are disposed to be in electrical contact with a metal layer of a substrate being treated, thereby power supply for electrolytic polishing/plating to a substrate being treated being implemented, without restricting to a periphery of a substrate, from a plurality of points on a surface thereof. Due to any one of these, liquid treatment equipment enables to improve uniformity in plane of an electric current sent to a surface being treated and of liquid treatment.

Liquid treatment method using alternating electrical contacts

A thermal insulator can change a heat insulation characteristic partially with a simple structure. The thermal insulator is divided into a plurality of parts in accordance with a temperature of a heat source which is insulated by the thermal insulator. The plurality of parts are formed of different honeycomb structures, respectively, so as to provide different heat insulation characteristics. The plurality of parts may be formed by different materials, or a shape or dimension such as a cell pitch of the honeycomb structure may be varied. Heat is collected from air within the honeycomb cells, and is transferred to other parts for heating.

Thermal insulator having a honeycomb structure and heat recycle system using the thermal insulator

Plating apparatus and plating method that can plate more uniformly on a processing surface of a workpiece are provided. The plating apparatus is comprised of a plating solution bathe which is provided with a first electrode held in a state soaked in a plating solution; a workpiece holding mechanism which holds a workpiece to contact its processing surface to the plating solution; and a contact member, disposed in the workpiece holding mechanism, that electrically contacts with the circumferential edge of the workpiece so to form a conductive layer on the workpiece surface as a second electrode. The contact member is divided along the circumferential direction of the workpiece with which they are electrically contacted. Thus, even if the contact resistance between each section of the contact member with the workpiece is variable, it is possible to adjust the plating electric current for each section of the contact member.

Plating apparatus and method of manufacturing semiconductor device

A plating system is composed of a transfer device for performing transfer of a wafer, a plating unit and a washing/drying unit provided around the transfer device. Each unit is structured to be detachable from the plating system. The plating unit is divided into a wafer transfer section and a plating section by a separator, and atmosphere of each section is independently set.

Processing apparatus and processing system

A mist trap mechanism and method for a plating apparatus, which can provide an improved mist removing effect by a simple structure, are provided. A gas discharge passage is formed to connect the space in a plating chamber and space outside of the plating chamber and provided with a liquid spouting portion and a solid wall. The discharge gas collides with the liquid spouted from the liquid spouting portion, and the discharge gas collides with the solid wall which has its surface wetted with the liquid spouted from the liquid spouting portion. Such a two-staged collision of the discharge gas effectively takes the mist contained in the discharge gas into the liquid. A liquid recovery portion is disposed in connection with the gas discharge passage to collectively catch the mist in a state captured by the liquid.

Mist trap mechanism and method for plating apparatus

Liquid treatment units are disposed in multi-tiers surrounding a main-arm . Among liquid treatment units, plating units M through M are disposed on a lower tier side, and a unit for post-treatment process such as a cleaning unit where a cleaner atmosphere is necessary is disposed on an upper tier side. Thereby, an improvement in an area efficiency and the formation and maintenance of a clean atmosphere can be simultaneously obtained.

Liquid treatment system and liquid treatment method

A thermal processing unit for a single substrate of the invention includes a processing chamber vessel whose inside can be made a predetermined atmosphere of a process gas, and an elevating shaft which can be moved up and down in the processing chamber vessel. A supporting body which can support a substrate is arranged on an upper end of the elevating shaft. The substrate supported by the supporting body is adapted to be heated by a heater. The supporting body has a circular supporting part which can support a substantially full surface of a peripheral area of the substrate, and a pushing-up member which can push up the substrate from on the supporting part for conveying the substrate. According to the invention, concentration of stress onto the substrate can be restrained, and a thermal process can be conducted uniformly within a surface of the substrate because heating from a peripheral area of the substrate may be restrained. In addition, the substrate can be easily conveyed although the substantially full surface of the peripheral area of the substrate is supported.

Thermal processing unit for single substrate

A semiconductor wafer is mounted on a susceptor disposed in a processing chamber, the wafer is heated at a temperature on the order of 1000&deg; C. for annealing, and a gas is supplied from a gas supply device disposed opposite to the wafer. When raising the temperature of the wafer and/or when lowering the temperature of the wafer, intra-surface temperature difference is limited to a small value to suppress the occurrence of slips. A gas supply device is divided into sections corresponding to a central part and a peripheral part, respectively, of the wafer to supply the gas at different flow rates onto the central part and the peripheral part, respectively. When raising the temperature of the wafer, for example, a gas of a temperature higher (lower) than that of the wafer is supplied at a flow rate per unit area greater (lower) than that at which the gas is supplied to the peripheral part to the central part. When lowering the temperature of the wafer, for example, a gas of a temperature higher (lower) than that of the wafer is supplied at a flow rate per unit area lower (higher) than that at which the gas is supplied to the peripheral part to the central part.

Thermal treatment method and apparatus

In an annealing apparatus for processing semiconductor wafers one by one, a hermetic process chamber has a work table having an upper surface on which a wafer is placed. A shower head is disposed to supply a process gas into the process chamber from a position opposing the upper surface of the work table. An exhaust chamber is connected to the bottom portion of the process chamber through an inlet opening below the work table. The inlet opening has a planar contour smaller than that of the work table. The planar contours of the work table and the opening are arranged almost concentrically with each other. An exhaust mechanism is connected to the exhaust chamber, so the process chamber is exhausted through the exhaust chamber.

Single-substrate-treating apparatus for semiconductor processing system

A heat-treating apparatus is arranged to perform a reforming process and a crystallizing process for tantalum oxide deposited on a semiconductor wafer. The apparatus includes a worktable with a heater incorporated therein. Under the worktable, there is a heat-compensating member formed of a thin plate and having a counter surface facing the bottom surface of the worktable along the periphery. The counter surface is formed of a mirror surface having a surface roughness of Rmax&equals;25 &mgr;m or less. Heat rays and radiant heat are reflected by the counter surface and applied to the periphery of the worktable, thereby compensating the periphery for heat loss.

Single-substrate-heat-treating apparatus for semiconductor process system

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Tsukui-gun, Japan

Wataru Okase