Sharp Kabushiki Kaisha Corporation

Other

Mitsubishi Gas Chemical Company, Inc.

Wataru Nakamura

Kiyoshi Minoura

Tadashi Ohtake

Takatoshi Orui

Fumiki Nakano

Hiromitsu Katsui

Makoto Nakazawa

Yoshihiro Okada

Atsushi Ban

Shoji Okazaki

Tetsunori Tanaka

Kenichi Kitoh

Masanobu Mizusaki

Hiroyuki Moriwaki

Tohru Senoo

Rikiya Takita

Keiichi Tanaka

Tohru Sonoda

Masaki Fujiwara

Tetsuya Okamoto

Takeshi Hirase

Yoshimasa Chikama

Takeshi Yaneda

Kazuhide Tomiyasu

Kazuki Kobayashi

Taketo Maruyama

Kenji Nakamura

Akinori Kubota

Satoshi Okabe

Yukimine Shimada

Tomoyuki Adaniya

Toshiyuki Gotou

An imaging panel includes an imaging element that is formed on a substrate. The imaging element includes a gate line, a source line, a switching element, a photoelectric conversion element, and a bias line. The gate line and the source line are formed in a layer in which a part of the switching element is formed, a layer in which a part of the photoelectric conversion element is formed, or a layer in which the bias line is formed.

Imaging panel

Disclosed is a liquid crystal panel of a scanning antenna including a transmission and/or reception region in which a plurality of antenna units are arrayed, and a non-transmission and/or reception region, the liquid crystal panel including: a TFT substrate provided with a first dielectric substrate, a TFT supported by the first dielectric substrate, a gate bus line, a source bus line, and a patch electrode; a slot substrate provided with a second dielectric substrate, and a slot electrode formed on a first main surface of the second dielectric substrate and including a slot arranged so as to correspond to the patch electrode; a liquid crystal layer provided between the TFT substrate and the slot substrate and including a plurality of liquid crystal regions; and a plurality of sealing portions that respectively surround the plurality of liquid crystal regions and bond the TFT substrate and the slot substrate together. Each of the plurality of antenna units includes one of the plurality of liquid crystal regions.

Scanned antenna

A scanning antenna includes a TFT substrate including a plurality of TFTs supported by a first dielectric substrate and a plurality of patch electrodes, a slot substrate including a slot electrode supported by a second dielectric substrate, a liquid crystal layer provided between the TFT substrate and the slot substrate, and a reflective conductive plate disposed opposing the second dielectric substrate across a dielectric layer. The slot electrode includes a plurality of slots disposed corresponding to the plurality of patch electrodes, each patch electrode is connected to a drain of the corresponding TFT, the slot electrode includes Cu layers, and lower metal layers and/or an upper metal layer, and the lower metal layer and/or the upper metal layer decrease about a half or more of a tensile stress of the Cu layer.

Scanned antenna and method of manufacturing scanned antenna

A liquid crystal panel of a scanning antenna includes a TFT substrate provided with a first dielectric substrate, a TFT supported by the first dielectric substrate, a gate bus line, a source bus line, and a patch electrode; a slot substrate provided with a second dielectric substrate, and a slot electrode that is formed on a first main surface of the second dielectric substrate and includes a slot arranged so as to correspond to the patch electrode; and a liquid crystal layer provided between the TFT substrate and the slot substrate. One of the TFT substrate and the slot substrate includes a projecting layer formed of resin and disposed on the liquid crystal layer side of the patch electrode or the slot electrode in a region surrounded by a sealing portion. The projecting layer is arranged so as not to overlap the patch electrode or the slot.

An imaging device according to an embodiment of the present invention includes a photoelectric conversion part that converts incident light into electric charge, and a detection part that detects the electric charge generated in the photoelectric conversion part. The photoelectric conversion part includes a plurality of photodiodes arranged in a matrix, and the detection part includes a plurality of thin film transistors provided corresponding to the plurality of photodiodes and arranged in a matrix. Each of the photodiodes includes a lower electrode, a semiconductor layer, and an upper electrode, and an insulating layer is provided between at least a portion of the lower electrode in the thickness direction and the semiconductor layer in the peripheral portion of the semiconductor layer. An end of the insulating layer has a tapered shape having an acute angle between the lower surface and the side surface of the insulating layer.

Imaging device and X-ray imaging device

The scanning antenna () is a scanning antenna in which antenna units (U) are arranged, the scanning antenna including: a TFT substrate () including: a first dielectric substrate (), TFTs, gate bus lines, source bus lines, and patch electrodes (); a slot substrate () including: a second dielectric substrate (), and a slot electrode (); a liquid crystal layer (LC) provided between the TFT substrate and the slot substrate; and a reflective conductive plate (). The slot electrode includes slots () arranged in correspondence with the plurality of patch electrodes, and a thickness of the second dielectric substrate () is smaller than the thickness of the first dielectric substrate () at least in a region where the antenna units (U) are arranged.

Scanning antenna

A scanning antenna includes a TFT substrate including a first dielectric substrate, TFTs supported by the first dielectric substrate, gate bus lines, source bus lines, and patch electrodes; a slot substrate including a second dielectric substrate, and a slot electrode formed on a first main surface of the second dielectric substrate; a liquid crystal layer provided between the TFT substrate and the slot substrate; and a reflective conduction plate facing a second main surface of the second dielectric substrate&#x2014;on a side opposite the first main surface with a dielectric layer therebetween. The slot electrode includes slots disposed corresponding to the patch electrodes, and each of the patch electrodes is connected to the drain of a corresponding TFT. A low-dielectric-loss material layer is formed in the slot, the low-dielectric-loss material layer being made from a material having a smaller dielectric loss with respect to microwaves than that of the liquid crystal material constituting the liquid crystal layer.

Scanning antenna and method for manufacturing scanning antenna

A method includes steps of (a) forming a substrate layerabove a support substratewhich is transparent, and then a thin-film element above the substrate layer; and (b) emitting laser beams La and Lb to a face of the support substrateopposite to another face of the support substrate to which the substrate layerand the thin-film element are formed, and delaminating the substrate layerand the thin-film element from the support substrate. In step (b), the laser beams La and Lb are emitted from different directions.

Method for producing thin-film element device and light irradiation device used therefor

Provided is a technique of image pickup without being affected by leakage current on an active matrix substrate that includes photoelectric conversion elements. An active matrix substrateincludes photoelectric conversion elements that are respectively provided with respect to a plurality of pixels defined by gate lines and data lines, and a bias linesupplying a bias voltage to each photoelectric conversion element. Further, the active matrix substratefurther includes a plurality of data protection circuit unitsthat are connected with the data lines, respectively, and a first common linethat is connected with the data protection circuitsand has a potential equal to or lower than those of the data lines, outside the image pickup area composed of a plurality of pixels. The data protection circuit unitincludes a first data non-linear element, and the first data non-linear elementis connected in a reverse bias state between the first common lineand the data lines

Active matrix substrate and X-ray imaging panel including same

A scanning antenna () in which a plurality of antenna units (U) are arranged, the scanning antenna including: a TFT substrate () including a first dielectric substrate (), TFTs, gate bus lines, source bus lines, and patch electrodes (); a slot substrate () including a second dielectric substrate () and a slot electrode () formed on a first main surface of the second dielectric substrate; a liquid crystal layer (LC) provided between the TFT substrate and the slot substrate; and a reflective conductive plate () disposed opposing via a dielectric layer () a second main surface opposite to the first main surface of the second dielectric substrate, () wherein the slot electrode includes slots disposed corresponding to the respective patch electrodes, and a heater part () is further provided on the outside of the TFT substrate () or on the outside of the slot substrate ().

In an organic EL display device (electroluminescent device) including an organic EL element (electroluminescent element), a first sealing film covers the organic El element, a second sealing film is formed on the first sealing film, and a third sealing film covers the first sealing film and the second sealing film.

Electroluminescent device including a plurality of sealing films

A scanned antenna () is a scanned antenna including antenna elements (U) arranged together, the scanned antenna including: a TFT substrate () including a first dielectric substrate (), TFTs, gate bus lines, source bus lines, and patch electrodes (); a slot substrate () including a second dielectric substrate () a slot electrode (); a liquid crystal layer (LC) provided between the TFT substrate and the slot substrate; and a reflective conductive plate (). The slot electrode includes slots () arranged so as to correspond to the patch electrodes. As seen from the normal direction to the first dielectric substrate, a plurality of spacer structures () provided between the TFT substrate and the slot substrate are arranged so as not to overlap with first regions (Rp) and/or second regions (Rp), where the first regions are regions that are within a distance of 0.3 mm from edges of the slots and the second regions are regions that are within a distance of 0.3 mm from edges of the patch electrodes.

A drain electrode () includes (i) a lower drain electrode () stacked on a semiconductor layer () so as to partially cover an upper surface of the semiconductor layer () and (ii) an upper drain electrode (). The semiconductor layer (), the lower drain electrode (), and the upper drain electrode () form steps. In a step part where the steps are formed, a distance between a periphery of the lower drain electrode () and a periphery of the upper drain electrode () is more than 0.4 &#x3bc;m but less than 1.5 &#x3bc;m.

Active matrix substrate, display panel, and display device

The present invention provides an etching liquid for a multilayer thin film containing a copper layer and a titanium layer, and a method of using it for etching a multilayer thin film containing a copper layer and a titanium layer, that is, an etching liquid for a multilayer thin film containing a copper layer and a titanium layer, which comprises (A) hydrogen peroxide, (B) nitric acid, (C) a fluoride ion source, (D) an azole, (E) a quaternary ammonium hydroxide and (F) a hydrogen peroxide stabilizer and has a pH of from 1.5 to 2.5, and a etching method of using it.

Etching liquid for a copper/titanium multilayer thin film

A semiconductor device () includes: a gate electrode () formed on a substrate (); a semiconductor layer () formed above the gate electrode () and including a source region, a drain region, and a channel region; a source electrode () connected to the source region above the semiconductor layer (); and a drain electrode () connected to the drain region above the semiconductor layer (). The semiconductor layer () has, at a portion overlapping the drain electrode (), a protrusion that protrudes outward along an extending direction of a drain line drawn out from the drain electrode (). At an outside of the channel region sandwiched between the drain electrode () and the source electrode (), the semiconductor layer () has an adjustment portion where an outer boundary of the semiconductor layer () is positioned more inward than an outer boundary of the gate electrode ().

Growing community of inventors

Sakai, Japan

Wataru Nakamura