Showa Denko K.k.

Wataru Nabekura

Ryouichi Takeuchi

Takashi Udagawa

Kazuhiro Mitani

Takaharu Hoshina

The present invention provides a light-emitting diode that includes two electrodes provided on a light-emitting surface, and exhibits high light extraction efficiency and high-brightness. The present invention relates to a light-emitting diode () including: a compound semiconductor layer () including a light-emitting portion () containing a light-emitting layer (); and a transparent substrate (), wherein the compound semiconductor layer () and the transparent substrate () are bonded, and a first electrode () and a second electrode () are provided on the side of a main light-emitting surface () of the compound semiconductor layer (), wherein the transparent substrate () includes: an upper surface (A) bonding to the compound semiconductor layer (); a bottom surface (B) having smaller dimensions than dimensions of the upper surface (A); and a side surface including at least inclined surface () inclined from the side of the upper surface toward the side of the bottom surface, wherein the first and second electrodes () and () are disposed within a region in which the bottom surface (B) is projected when viewed from the top of the light-emitting diode.

Light-emitting diode, method for manufacturing the same, and light-emitting diode lamp

A light-emitting diode having a high output, high efficiency, and a long service life under a high-humidity environment is provided. The light-emitting diode () includes a compound semiconductor layer () having a light-emitting section (), ohmic electrodes () provided on the main light extraction surface of the compound semiconductor layer (), and an electrode protection layer () for protecting the ohmic electrodes (), wherein the Al concentrations of the surfaces () of the compound semiconductor layer (), which include the main light extraction surface, are 20% or less and the As concentration of the surfaces () is less than 1%, and the electrode protection layer () has a two-layer structure composed of a first protective film () provided so as to cover the ohmic electrodes () and a second protective film () provided so as to cover at least an end portion of the first protective film ().

Light emitting diode, light emitting diode lamp, and lighting apparatus

A light-emitting diode () includes a transparent substrate and a compound semiconductor layer that contains a light-emitting part () containing a light-emitting layer () formed of (AlGa)InP (0&#x2266;X&#x2266;1 and 0&#x3c;Y&#x2266;1) joined to the transparent substrate (). The light-emitting diode () has on a main light-extracting surface thereof a first electrode () and a second electrode () different in polarity from the first electrode. The transparent substrate has side faces that are a first side face () roughly perpendicular to a light-emitting surface of the light-emitting layer on a side near the light-emitting layer and a second side face () inclined relative to the light-emitting surface on a side distant from the light-emitting layer and coarsened with irregularities falling in a range of 0.05 &#x3bc;m to 3 &#x3bc;m.

Light-emitting diode and method for fabrication thereof

A transparent-substrate light-emitting diode () has a light-emitting layer () made of a compound semiconductor, wherein the area (A) of a light-extracting surface having formed thereon a first electrode () and a second electrode () differing in polarity from the first electrode (), the area (B) of a light-emitting layer () formed as approximating to the light-extracting surface and the area (C) of the back surface of a light-emitting diode falling on the side opposite the side for forming the first electrode () and the second electrode () are so related as to satisfy the relation of A&#x3e;C&#x3e;B. The light-emitting diode () of this invention, owing to the relation of the area of the light-emitting layer () and the area of the back surface () of the transparent substrate and the optimization of the shape of a side face of the transparent substrate (), exhibits high brightness and high exoergic property never attained heretofore and fits use with an electric current of high degree.

A pn-junction compound semiconductor light-emitting device is provided, which comprises a stacked structure including a light-emitting layer composed of an n-type or a p-type aluminum gallium indium phosphide and a light-permeable substrate for supporting the stacked structure, and the stacked structure and the light-permeable substrate being joined together, wherein the stacked structure includes an n-type or a p-type conductor layer, the conductor layer and the substrate are joined together, and the conductor layer is composed of a Group III-V compound semiconductor containing boron.

Compound semiconductor light-emitting device and production method thereof

Compound semiconductor light-emitting device with AlGaInP light-emitting layer formed within

A semiconductor light-emitting device includes a semiconductor substrate that has a rear surface formed with a first electrode, a semiconductor layer that includes a light-emitting portion and is formed on the semiconductor substrate, a plurality of dispersed electrodes that are individually formed on a part of the surface of the semiconductor layer to make ohmic contact with the semiconductor layer, a transparent conductive film that covers the surface of the semiconductor layer and the dispersed electrodes to electrically conduct with the dispersed electrodes, and a pad electrode that is formed on a part of the surface of the transparent conductive film to electrically conduct with the transparent conductive film.

Semiconductor light-emitting device, electrode for the device, method for fabricating the electrode, LED lamp using the device, and light source using the LED lamp

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Chichibu, Japan

Wataru Nabekura