Shin-etsu Chemical Co., Ltd.

Wataru Kusaki

Takeshi Kinsho

Toshinobu Ishihara

Jun Hatakeyama

Takeru Watanabe

Osamu Watanabe

Yuji Harada

Takanobu Takeda

Takao Yoshihara

Youichi Ohsawa

Tomohiro Kobayashi

Shigehiro Nagura

Kazuhiro Hirahara

Koji Hasegawa

Masaki Ohashi

Satoshi Watanabe

Katsuya Takemura

Jun Watanabe

Kazunori Maeda

Takeshi Nagata

Akihiro Seki

Ryuji Koitabashi

There is disclosed a method for producing a substrate for making a microarray, the method comprising: at least, a step of forming a monomolecular film having orientated oxysilanyl groups toward an outmost surface on the substrate; and a step of forming a monomolecular film having orientated amino groups toward an outmost surface on the substrate by applying a solution containing a diamine compound to the oxysilanyl groups. There can be provided a method for producing a substrate for making a microarray in which density and orientation of amino groups orientated toward an outmost surface are controllable, and in addition, there is no delamination of a monomolecular film formed on the substrate.

Method for producing substrate for making microarray

There is disclosed a method for producing a molecule immobilizing substrate, comprising at least the steps of: There can be provided: a method for producing a molecule immobilizing substrate which is free of occurrence of an immobilized-molecule peeling problem in the case of conducting an assay by immobilizing molecules on the substrate.

Method for producing molecule immobilizing substrate, and molecule immobilizing substrate

A positive resist composition is provided comprising an acid generator, a resin component which generates resin-solubilizing groups under the action of acid so that the resin component becomes soluble in an alkaline developer, at least some resin-solubilizing groups being carboxyl groups, and a compound for activating or condensing a carboxyl group. When processed by the lithography, the resist composition forms a resist pattern having a very high resolution and good mask fidelity.

Positive resist compositions and patterning process

Provided is a fabrication method with which a laminate having a hollow structure can be produced more easily, while enabling to produce a multilayer structure as well. That is, a method for producing a hollow structure, a fabrication method by stacking-up a structural material among fabrication methods of a hollow structure on a substrate, the method including; a step of forming a structural material layer on a substrate, a step of forming a pattern on the structural material layer, a step of forming a sacrificial material layer by burying between the patterns with a water-soluble or an alkaline-soluble polymer as the sacrificial material to be buried between the patterns, a step of further laminating a structural material layer and forming a pattern on the structural material layer laminated, and a step of finally removing the sacrificial material after all of lamination is completed.

Method for producing hollow structure

To provide a method for manufacturing a substrate for making a microarray which will ensure the secure immobilization of a material in a site-selective manner at a low cost. The method comprises the steps of: forming a monomolecular film on the surface of a substrate using a silane compound represented by the following general formula (1),YSi&#x2014;(CH)&#x2014;X&#x2003;&#x2003;(1), 

Method for manufacturing substrate for making microarray

A method for manufacturing a substrate for making a microarray wherein a monomolecular film for immobilizing a target molecule can be simply formed position-selectively in manufacture of the substrate for making the microarray is provided. A method for manufacturing a substrate for making a microarray, comprising, a step of forming a resist film on the substrate using a chemically amplified positive resist composition using a copolymer where a content of a monomer unit having a hydroxyl group is 5 mole % or less relative to total monomer units as a binder; a step of patterning the resist film; a step of forming a monomolecular film having a silicon oxide chain on the substrate having the patterned resist film; and subsequently a step of removing the resist film.

A resist composition comprises a polymer comprising recurring units having formula (1) wherein R, R, R, and Rare H or methyl, R, R, R, and Rare H, alkyl or fluoroalkyl, R is F or H, Ris alkylene, Ris fluorinated alkyl, Ris a single bond or alkylene, Rand Rare H, F, methyl or trifluoromethyl, Rand Rare a single bond, &#x2014;O&#x2014; or &#x2014;CRR&#x2014;, R, R, and Rare H, F, methyl or trifluoromethyl, Ris alkylene, X, Xand Xare &#x2014;C(&#x2550;O)&#x2014;O&#x2014;, &#x2014;O&#x2014;, or &#x2014;C(&#x2550;O)&#x2014;R&#x2014;C(&#x2550;O)&#x2014;O&#x2014; wherein Ris alkylene, 0&#x2266;(a-1)&#x3c;1, 0&#x2266;(a-2)&#x3c;1, 0&#x2266;(a-3)&#x3c;1, 0&#x3c;(a-1)+(a-2)+(a-3)&#x3c;1, 0&#x3c;b&#x3c;1, and 0&#x3c;(a-1)+(a-2)+(a-3)+b&#x2266;1. 

Resist composition and patterning process

A resist composition comprising as a quencher a nitrogen-containing organic compound bearing a nitrogen-containing heterocycle and having a molecular weight of at least 380 exhibits a high resolution and satisfactory mask coverage dependence and is useful in microfabrication using electron beam or deep-UV.

Nitrogen-containing organic compound, resist composition and patterning process

To a resist composition, an alkali-soluble polymer having fluorinated ester-containing lactone units incorporated therein is included as an additive. The resist composition forms a resist film having a reduced contact angle after development. The resist film prevents water penetration during immersion lithography.

Polymer, resist composition, and patterning process

A resist composition comprises a polymer which increases its alkali solubility under the action of an acid as a base resin, and a copolymer comprising recurring units containing a sulfonic acid amine salt and recurring units containing at least one fluorine atom as an additive. The composition is suited for immersion lithography.

A negative resist material, which comprises at least a high polymer containing repeating units represented by the following general formula (1) and having a weight average molecular weight of 1,000 to 500,000. There is provided a negative resist material, in particular, a negative resist material of chemical amplification type, which shows high sensitivity, resolution, exposure latitude and process adaptability as well as good pattern shape after light exposure, and further shows superior etching resistance.

Negative resist material and pattern formation method using the same

A chemical amplification positive resist composition comprising a polymeric mixture of a polyhydroxystyrene derivative having a Mw of 1000-500,000 and a copolymer of hydroxystyrene and (meth)acrylate having a Mw of 1000-500,000, as a base resin, has improved dry etching resistance, high sensitivity, high resolution, and process adaptability, and is suppressed in the slimming of pattern films after development with aqueous base.

Chemical amplification resist compositions

A ternary copolymer of hydroxystyrene, tertiary alkyl (meth)acrylate and substitutable phenoxyalkyl (meth)acrylate having a Mw of 1,000-500,000 is blended as a base resin to formulate a chemically amplified, positive resist composition which has advantages including a significantly enhanced contrast of alkali dissolution rate before and after exposure, high sensitivity, high resolution, a satisfactory pattern profile after exposure, high etching resistance, and process adaptability.

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Joetsu, Japan

Wataru Kusaki