Fuji Photo Film Company, Limited

Fujifilm Corporation

Hitachi-kokusai Electric Inc.

Hitachi Denshi Kabushiki Kaisha

Showa Denko K.k.

Sony Corporation

Sumco Corporation

Konami Digital Entertainment Co., Ltd.

Industrial Research Institute Limited

Nippon Steel & Sumitomo Metal Corporation

Fuji Photo Film, Inc.

Wataru Ito

Hirotada Ueda

Yoshiro Kitamura

Hirokazu Kameyama

Kazuo Shimura

Yuanzhong Li

Tatsuo Fujimoto

Tatsuya Aoyama

Akira Yoda

Hideya Takeo

Nobuyoshi Nakajima

Shoji Hara

Masahiko Yamada

Kensuke Terakawa

Yasunori Ohta

Naoyuki Nishino

Shuji Ono

Eiichi Kito

Toshitaka Agano

Toshiaki Ono

Shuichi Ohtsuka

Kazuya Takahashi

Sadato Akahori

Takashi Hamano

Daiki Harada

Takashi Suenaga

Hiraku Akiho

Naoki Mochizuki

Norihiko Fujita

Satoshi Arakawa

Shinji Imai

Hiroaki Yasuda

Kazuo Horikawa

Minoru Tanaka

Kazuhiro Mino

Muneaki Yamaguchi

Shigeru Saotome

Keigo Hasegawa

Ayumu Isomura

Yuuma Adachi

Takafumi Noguchi

Dai Murakoshi

Kazuyuki Itagaki

Makoto Ohgoda

Masanori Miyoshi

Yuichiro Komiya

Hideki Yamagishi

Masaki Shimizu

Yoshinori Usami

Hirokatsu Yashiro

Tadashi Sakon

Masakazu Katsuno

Hiroshi Tsuge

Miyuki Fujii

Takashi Aigo

Kazunari Iwanaga

Mitsue Ito

Toshimichi Okada

Shinya Ogura

Hiromasa Yamada

Yutaka Souda

Junichi Togashi

Jun Fujise

Naoki Negishi

Yohei Akimoto

Koki Kimura

Akio Sato

Erika Nakamura

Fumiaki Oshita

Masaya Okada

Tomeyoshi Ozawa

Yasuhiko Goto

Miyako Hotta

Takafumi Matsushita

Haruhiro Koto

Shoji Nanami

Tatsuhiko Shigemoto

Chieko Onuma

Masayoshi Fujita

Takaaki Tamura

Munemitsu Kuwabara

Atsushi Sassa

Hiroyasu Orui

Madoka Tanaka

Yoshifumi Dounomae

Vitaly Alexandrovich Lopota

Alexander Sergeyevich Kondratyev

Victor Ivanovich Yudin

Sergey Anatoliyevich Polovko

Ekaterina Yurevna Smirnova

Kirill Nikolayevich Stupin

Lev Borisovich Kogan

Dmitry Nikolayevich Stepanov

Masahiro Kiyohara

Kazunori Takahashi

Shingo Ishiyama

Toshiaki Hirama

Hiroaki Nakakita

Hideaki Hayasaka

Miyuki Endo

There is provided an image analysis system having an image analysis server which analyzes an input image of a monitoring area and detects a state of a specific monitored object. The image analysis server is configured to divide, in the input image of the monitoring area, a portion of an area in which the monitored object is expected to be present into a plurality of grids, generate a trained model trained by associating '1' with an image of a grid in which the monitored object is present and “0” with an image of a grid in which the monitored object is not present for each grid, calculate, for the input image, a confidence of a presence of the monitored object for each grid using the trained model, determine a presence or absence of the monitored object in the monitoring area based on confidences of the plurality of grids, and detect an abnormality when a confidence value in at least one of the grids is inconsistent with the determination result.

Image analysis system, image analysis method, and image analysis program

Processing for judging whether a face is included in a frame is performed, in a predetermined interval, on each of frames included in a moving image of a subject, displayed on a monitor, until the judgment becomes positive. If it is judged that a face is included in a frame, the facial position is detected in the frame, and stored. Then, judgment is made as to whether a face is included in the next frame after predetermined time. If the judgment is positive, the facial position is detected. The previously stored facial position is replaced by the newly detected facial position, and the newly detected facial position is stored. These processes are repeated until photographing operation is performed by operating a release unit.

Photographing apparatus, method and medium using image recognition

An epitaxial silicon carbide single crystal wafer having a small depth of shallow pits and having a high quality silicon carbide single crystal thin film and a method for producing the same are provided. The epitaxial silicon carbide single crystal wafer according to the present invention is produced by forming a buffer layer made of a silicon carbide epitaxial film having a thickness of 1 &#x3bc;m or more and 10 &#x3bc;m or less by adjusting the ratio of the number of carbon to that of silicon (C/Si ratio) contained in a silicon-based and carbon-based material gas to 0.5 or more and 1.0 or less, and then by forming a drift layer made of a silicon carbide epitaxial film at a growth rate of 15 &#x3bc;m or more and 100 &#x3bc;m or less per hour. According to the present invention, the depth of the shallow pits observed on the surface of the drift layer can be set at 30 nm or less.

Epitaxial silicon carbide single crystal wafer and process for producing the same

An abandoned item detection unit detects an abandoned item shown in an image taken by any of a plurality of imaging devices. A person identification unit specifies the image directly before or directly after the appearance of the abandoned item as an image of abandonment timing, and identifies at least one person shown in the image of abandonment timing as a target person. A person search unit searches for an image showing the target person from among the images respectively taken by any of the plurality of imaging devices. A result display unit outputs a display showing the movement of the target person on the screen of a user terminal on the basis of the imaging device that has taken each image showing the target person and the imaging time at which each image showing the target person was taken.

Image monitoring system

The purpose of the present invention is to provide a technology which adaptively switches video analysis methods according to a congestion situation within a video, and which carries out a suitable video analysis by a limited computational volume. Provided is an image processing device, wherein a congestion estimation unitestimates a congestion situation within a video which is acquired from an image input unit. A control unitswitches methods for video analysis according to the congestion situation. In a situation of low congestion, an image analysis unit for use in normal situationscarries out the video analysis by a basic method. In a situation of high congestion, an image analysis unit for use in congested situationscarries out a high-precision video analysis, such as an analysis which spans a plurality of frames.

Image processing device

An epitaxial silicon carbide single crystal wafer and a method for producing the same, wherein the epitaxial silicon carbide single crystal wafer is produced by forming a buffer layer made of a silicon carbide epitaxial film having a thickness of 1 &#x3bc;m or more and 10 &#x3bc;m or less by adjusting the ratio of the number of carbon to that of silicon (C/Si ratio) contained in a silicon-based and carbon-based material gas to 0.5 or more and 1.0 or less, and then by forming a drift layer made of a silicon carbide epitaxial film at a growth rate of 15 &#x3bc;m or more and 100 &#x3bc;m or less per hour, thereby bringing a depth of shallow pits observed on the surface of the drift layer to 30 nm or less.

An image monitoring system includes: a reference image generation unit generating a reference image serving as a reference image, based on an input image; a foreground extraction unit detecting, from the input image, a foreground region different from the reference image; a stationary region extraction unit extracting a stationary region from the foreground region; a feature quantity extraction unit extracting a feature quantity of the stationary region; a feature quantity recording unit recording feature quantities as a function of time; a stationary object detection unit clustering pixels, recorded feature quantities of which meet predetermined criteria, and detecting a stationary object; a left object determination unit determining whether the stationary object is a left object, based on a feature quantity of the stationary object and evaluation of the surrounding environment; and a left object management unit managing attributes of left objects, and issuing a report when a certain condition is met.

Monitoring device

A method for producing an epitaxial silicon carbide single crystal wafer comprised of a silicon carbide single crystal substrate having a small off angle on which a high quality silicon carbide single crystal film with little basal plane dislocations is provided, that is, a method for producing an epitaxial silicon carbide single crystal wafer epitaxially growing silicon carbide on a silicon carbide single crystal substrate using a thermal CVD method, comprising supplying an etching gas inside the epitaxial growth reactor to etch the surface of the silicon carbide single crystal substrate so that the arithmetic average roughness Ra value becomes 0.5 nm to 3.0 nm, then starting epitaxial growth to convert 95% or more of the basal plane dislocations at the surface of the silicon carbide single crystal substrate to threading edge dislocations.

Method for producing epitaxial silicon carbide single crystal wafer

A browsing service of messages exchanged through posts and responses to the posts among multiple users is provided in a message-browsing system. A terminal device includes an assigning unit assigning user images corresponding to multiple specific users who are a subset or all of the multiple users to respective ones of a number of reference positions that is equal to the number of the user images on a screen according to a predetermined rule, a position determining unit determining the reference positions assigned to the user images corresponding to the multiple specific users as display positions displaying the respective user images, and a position changing unit changing a display position of a user image corresponding to a user responding to a post another user has contributed to a position close to a user image corresponding to another user who has contributed the post.

Message-browsing system, server, terminal device, control method, and recording medium

The object is to produce with good reproducibility an epitaxial silicon carbide wafer having a high quality silicon carbide single crystal thin film with little step bunching. To achieve this object, for etching the silicon carbide single crystal substrate in the epitaxial growth furnace, hydrogen carrier gas and silicon-based material gas are used. After the etching treatment is finished as well, the epitaxial growth conditions are changed in the state in the state supplying these gases. When the conditions stabilize, a carbon-based material gas is introduced for epitaxial growth.

Method for producing epitaxial silicon carbide wafers

The present invention provides a method of epitaxial growth of an SiC thin film by the thermal CVD process wherein it is possible to improve the in-plane uniformity of the doping density and possible to grow an SiC thin film by a uniform thickness. This method is an epitaxial growth method for silicon carbide characterized by comprising adjusting a ratio of the hydrocarbon gas and silicon feedstock gas so as to become, by C/Si ratio, 0.5 to 1.5 in range, making the hydrocarbon gas contact a hydrocarbon decomposition catalyst heated to 1000&#xb0; C. to 1200&#xb0; C. so as to make at least part of the hydrocarbon gas break down into carbon and hydrogen, and supplying carbon contained in the hydrocarbon gas and silicon contained in the silicon feedstock gas to the silicon carbide single crystal substrate.

Epitaxial growth method for silicon carbide

A system detects a candidate for an object which intrudes based on images of a visible light camera and a far-infrared camera that monitor the sea, further derives a size, a velocity, an intrusion direction, and linearity, and identifies the object to some extent. Also, the system distinguishes between a boat, a human, and a floating matter based on the luminances or the like in a far-infrared image. In addition, the system observes the periodicity of normal waves on the sea surface at a location without any object by performing the Fourier transform on the image. The accuracy of identification of an object is improved based on the correlation between the motion of waves in a normal state and the motion of the object.

Marine intrusion detection system and method

Growing community of inventors

Kanagawa-ken, Japan

Wataru Ito