Canon Kabushiki Kaisha

Two Cells Co., Ltd.

Wataru Ando

Hajime Miyazaki

Takeshi Akasaka

Hideki Yoshikawa

Norimasa Nakamura

Keishi Saitoh

Toshihiro Kikuchi

Shozo Ishikawa

Masakazu Matsumoto

Itaru Yamazaki

Kaoru Kobayashi

Shigeru Nagase

Hikaru Matsuda

Yoshiki Sawa

Shigeru Miyagawa

The present invention can be used for actual implantation surgery without a scaffold. The present invention provides a synthetic tissue or complex which can be produced by culture and has a high level of differentiation ability. The present invention also provides a therapy and medicament for repairing and/or regenerating tissue using replacement and covering. By culturing cells under specific culture conditions such that medium contains an extracellular matrix synthesis promoting agent, the cells are organized and are easily detached from a culture dish. The present invention was achieved by finding such a phenomenon. In addition, the self contraction of the tissue can be regulated by culturing the tissue in a suspended manner. Therefore, it is possible to regulate the three-dimensional shape of the tissue. The present invention also provides a method for producing an implantable synthetic tissue which does not require a plurality of monolayer cell sheets assembled to form a three-dimensionally structured synthetic tissue. The present invention is characterized by richness in adhesion molecules, nonnecessity of additional fixation at an implantation site, and good biological integration.

Scaffold-free self-organized 3D synthetic tissue

A photosensitive member having stable electrophotographic characteristics can be constituted by an electroconductive support and a photosensitive layer disposed thereon and containing a novel fullerene compound having an organosilicon group as a charge-transporting substance. The fullerene compound may preferably have a polyhedral structure, particularly that of Buckminsterfullerene (C.sub.60) and be represented by the formula: C.sub.60 (A).sub.n . . . (2), wherein A denotes an organosilicon group represented by the formula: ##STR1## (wherein R.sub.1-1 and R.sub.1-2 independently denote a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted silyl group, a substituted or unsubstituted germyl group, a halogen atom, or a group constituting a substituted or unsubstituted ring by a mutual combination of R.sub.1-1 and R.sub.1-2 together with the Si atom in the formula); and n is an integer of 1 to 5, and a plurality of A in the case of n being two or larger can be the same or different with each other.

Electrophotographic photosensitive member, electrophotographic apparatus

Electrophotographic photosensitive member, eletrophotographic apparatus

An electrophotographic photosensitive member comprises a photosensitive layer on a conductive support, wherein said photosensitive layer contains a compound, having structures (A) and (B) together in its structural formula and wherein said photosensitive layer contains a thioether compound represented by Formula (VI).

Electrophotographic photosensitive member

A method for forming a deposition film comprises applying an excitation energy to a silane compound (SiOA) in a gaseous state having at least one substituent (OA) of the formula of --OC.sub.a H.sub.b X.sub.c where b+c=2a+1, a is a positive integer, b and c are zero or a positive integer, provided that b and c are not simultaneously zero and X is halogen atom to form a deposition film containing silicon atom on a substrate. A method for forming a deposition film comprises applying an excitation energy to a silane compound (SiA) in a gaseous state having 2-6 silicon atoms, having at least one substituent (A) of the formula of --C.sub.a H.sub.b X.sub.c where b+c=2a+1, a is a positive integer, b and c are zero or a positive integer, and X is halogen atom, containing at least one species selected from hydrogen atom and halogen atom, and further at least one of the silicon atoms present at the both ends bonding to only one species selected from hydrogen atom and halogen atom except for bonding to another silicon atom, to form a deposition film containing silicon atom on a substrate.

Method for forming a deposition film

Growing community of inventors

Ibaraki, Japan

Wataru Ando