Agere Systems Inc.

Agere Systems Guardian Corp.

At&t Bell Laboratories

Other

Lucent Technologies Inc.

At+t Corp.

Warren Kazmir Waskiewicz

Victor Katsap

James Alexander Liddle

Eric Munro

John Andrew Rouse

Xieqing Zhu

Sungho Jin

Pieter Kruit

Wei Zhu

Donald M Tennant

David L Windt

Daniel Moonen

Kathleen R Early

Roger A Fratti

Richard E Howard

Reginald Conway Farrow

Cynthia A Volkert

Lloyd R Harriott

David Lee Windt

Kurt S Werder

Peter Kruit

Jin Sungho

Techniques for processing power transistor devices are provided. In one aspect, the curvature of a power transistor device comprising a device film formed on a substrate is controlled by thinning the substrate, the device having an overall residual stress attributable at least in part to the thinning step, and applying a stress compensation layer to a surface of the device film, the stress compensation layer having a tensile stress sufficient to counterbalance at least a portion of the overall residual stress of the device. The resultant power transistor device may be part of an integrated circuit.

Techniques for curvature control in power transistor devices

A method and apparatus are disclosed for fabricating a substrate having a plurality of circuit patterns. The substrate is exposed to a primary mask having a plurality of the desired circuit patterns, surrounded by one or more exclusion regions, and a secondary mask having a pattern corresponding to the exclusion regions that satisfies at least one design rule for a subsequent process. The primary and secondary masks are exposed on the substrate in any order before the resist patterns are developed. The pattern on the secondary mask may comprise, for example, an array of fill patterns. The pattern on the secondary mask may satisfy design rules for more than one process level so that a single secondary mask can be utilized for multiple process levels. In addition, the substrate only needs to be exposed to the secondary mask for process levels where the exclusion regions violate a design rule.

Method and apparatus for manufacturing multiple circuit patterns using a multiple project mask

A method and apparatus for controlling beam emittance by placing a lens array in a drift space of an illumination system component. The illumination system component may be an electron gun or a liner tube or drift tube, attachable to an electron gun. The lens array may be one or more mesh grids or a combination of grids and continuous foils. The lens array forms a multitude of microlenses resembling an optical 'fly's eye' lens. The lens array splits an incoming solid electron beam into a multitude of subbeams, such that the outgoing beam emittance is different from the incoming beam emittance, while beam total current remains unchanged. The method and apparatus permit independent control of beam current and beam emittance, which is beneficial in a SCALPEL illumination system.

Lens array for electron beam lithography tool

A cathode with an improved work function, for use in a lithographic system, such as the SCALPEL&#x2122; system, which includes a buffer between a substrate and an emissive layer, where the buffer alters, randomizes, miniaturizes, and/or isolates the grain structure at a surface of the substrate to reduce the grain size, randomize crystal orientation and reduce the rate of crystal growth. The buffer layer may be a solid solution or a multiphase alloy. A method of making the cathode by depositing a buffer between a surface of the substrate and an emissive layer, where the deposited buffer alters, randomizes, miniaturizes, and/or isolates the grain structure at a surface of the substrate to reduce the grain size, randomize crystal orientation and reduce the rate of crystal growth.

Cathode with improved work function and method for making the same

A cathode with an improved work function, for use in a lithographic system, such as the SCALPEL&trade; system, which includes a buffer between a substrate and an emissive layer, where the buffer alters, randomizes, miniaturizes, and/or isolates the grain structure at a surface of the substrate to reduce the grain size, randomize crystal orientation and reduce the rate of crystal growth. The buffer layer may be a solid solution or a multiphase alloy. A method of making the cathode by depositing a buffer between a surface of the substrate and an emissive layer, where the deposited buffer alters, randomizes, miniaturizes, and/or isolates the grain structure at a surface of the substrate to reduce the grain size, randomize crystal orientation and reduce the rate of crystal growth.

An apparatus and method of focusing including a source for producing an electron beam, a mask and a projection column, through which the electron beam passes, and a wafer on which the electron beam is to be focused. The wafer is located in a plane where spherical aberrations of the projection column reduce the negative defocusing effect caused by chromatic aberrations in the projection column. The apparatus and method are applicable to general electron patterning tools, electron patterning tools where a thickness of the mask is smaller than an electron mean free path of the electron patterning tool, and the SCALPEL&trade; electron patterning tool.

Electron beam lithography apparatus focused through spherical aberration introduction

The specification describes a method and apparatus for electron beam lithography wherein a Wehnelt electron gun is modified to improve the uniformity of the electron beam. The bias on the Wehnelt aperture is reversed from the conventional bias so that it is biased positively with respect to the cathode. The Wehnelt opening is tapered with a disk emitter inserted into the taper. The result of these modifications is an electron beam output with low brightness which is highly uniform over the beam cross section.

Electron guns for lithography tools

A bonded article including a single crystal cathode, for use in projection electron beam lithography, such as the SCALPEL&trade; system. Because of its single crystalline structure, the single crystal cathode has only slightly misoriented grains. As a result, the single crystal cathode has few structural non-uniformities, and therefore a uniform emission characteristic. The single crystal cathode may be made of at least one of tantalum, tungsten, rhenium, and molybdenum. A local bonding technique for bonding a single crystal cathode with a conventional member. The local bonding technique does not recrystallize a center of the single crystal cathode, and therefore produces a bonded article which is usable in a projection electron lithography system, such as the SCALPEL&trade; system. The local bonding technique may be laser welding and the single crystal cathode may be made of at least one of tantalum, tungsten, rhenium, and molybdenum. The member may be a conventional filament and the filament may be made of one of tungsten, a tungsten-rhenium alloy, and a tungsten-tantalum alloy.

Bonded article having improved crystalline structure and work function uniformity and method for making the same

Electron beam lithography focusing through spherical aberration introduction

An apparatus for projection lithography is disclosed. The apparatus has at least one magnetic doublet lens. An aperture scatter filter is interposed between the two lenses of the magnetic doublet lens. The aperture scatter filter is in the back focal plane of the magnetic doublet lens system, or in an equivalent conjugate plane thereof. The apparatus also has two magnetic clamps interposed between the two lenses in the magnetic doublet lens. The clamps are positioned and configured to prevent substantial overlap of the magnetic lens fields. The magnetic clamps are positioned so that the magnetic fields from the lenses in the magnetic doublet lens do not extend to the aperture scatter filter.

Electron beam imaging apparatus

The specification describes a method and apparatus for electron beam lithography wherein a Wehnelt electron gun is modified to improve the uniformity of the electron beam. A mesh grid is applied to the Wehnelt aperture and the mesh grid functions as a multiple secondary emitter to produce a uniform beam flux over a wide area. The grid voltage of the modified gun is substantially lower than in a conventional Wehnelt gun, i.e. less than 100 volts, which can be switched conveniently and economically using semiconductor drive circuits.

Electron emitters for lithography tools

A method and apparatus for controlling beam emittance by placing a quadrupole lens array in a drift space of an illumination system component. The illumination system component may be an electron gun or a liner tube or drift tube, attachable to an electron gun. The quadrupole lens array may be three or more mesh grids or a combination of grids and continuous foils. The quadrupole lens array forms a multitude of microlenses resembling an optical &ldquo;fly's eye&rdquo; lens. The quadrupole lens array splits an incoming solid electron beam into a multitude of subbeams, such that the outgoing beam emittance is different from the incoming beam emittance, while beam total current remains unchanged. The method and apparatus permit independent control of beam current and beam emittance, which is beneficial in a SCALPEL illumination system.

Illumination system for electron beam lithography tool

Apparatus for moving a platform in X and Y directions including a first shaft secured along a first edge of the platform and oriented axially in the X direction and a second shaft secured along a second edge of the platform and oriented axially in the Y direction. First and second bearings support the first and second shafts, respectively, for axial movement. First and second linear drive shafts are oriented axially in the Y and X directions, respectively, with each drive shaft having a first end secured to a respective bearing. The drive shafts are arranged for independent axial movement in the Y and X directions and all of the shafts lie substantially in a single plane.

Planar movable stage mechanism

Method of electron beam exposure utilizing emitter with conductive mesh grid

An apparatus and process in which a particle beam is used to introduce a pattern into an energy sensitive material is disclosed. A coil assembly is used to selectively control both the orientation of the particle beam relative to the substrate on which the energy sensitive material is applied and the magnification or demagnification of the image in the particle beam. The coil assembly comprises at least two coils. The particle beam is projected through the coil assembly. The coil assembly is used to rotate the particle beam to compensate for an observed difference between the actual substrate orientation and the desired substrate orientation. The coils in the coil assembly are excited so that the desired rotation is introduced into the particle beam by the cumulative effects of the magnetic fields generated by the excited coils in the coil assembly. The coils in the coil assembly are calibrated such that the desired amount of beam rotation is provided by the coil assembly without introducing unwanted lens effects into the beam. The coils are also used to introduce a desired lens effect, such as magnification of demagnification, into the particle beam without introducing unwanted rotation into the beam. In another embodiment, the coils are used to introduce a desired lens effect, such as magnification or demagnification, into the particle beam without introducing unwanted rotation into the beam.

Growing community of inventors

Clinton, NJ, United States of America

Warren Kazmir Waskiewicz