Nxp USA, Inc.

Warren Crapse

Darrell Glenn Hill

Alan J Magnus

Fred Reece Clayton

David Robert Currier

A method of making a semiconductor device is provided for depositing, patterning, and developing photoresist () on an underlying layer located on a backside of a wafer having a frontside on which an integrated circuit die are formed over a shared wafer semiconductor substrate and arranged in a grid, thereby forming a patterned photoresist mask with a unique set of one or more openings which are used to selectively etch the underlying layer to form, on each integrated circuit die, a unique die mark identifier pattern of etched openings in the underlying layer corresponding to the unique set of one or more openings in the patterned photoresist mask (), where the patterned photoresist mask is removed () from the backside of the wafer before singulating the wafer to form a plurality of integrated circuit devices () which each include a unique die marking.

Growing community of inventors

Mesa, AZ, United States of America

Warren Crapse