Samsung Electronics Co., Ltd.

Wangsun Lim

Junghyun Roh

Seungweon Ha

Jaeyoung Hong

A semiconductor device includes a substrate that includes a cell array region, a peripheral region, and a scribe lane region. A stack structure is disposed on the cell array region of the substrate and includes electrodes that are vertically stacked and spaced apart from each other. A dummy structure extends from the peripheral region to the scribe lane region of the substrate and includes first dielectric layers and second dielectric layers that are alternately and repeatedly stacked. A vertical channel structure penetrates the stack structure, and a slit in the dummy structure on the scribe lane region. The slit extends in a direction that is perpendicular to a top surface of the substrate and penetrates at least a portion of the dummy structure. The slit includes a void.

Growing community of inventors

Chungcheongnam-do, South Korea

Wangsun Lim