Taiwan Semiconductor Manufacturing Comp. Ltd.

Wang-Yi Lee

Yu-Der Chih

Jonathan Tsung-Yung Chang

Ya-Chin King

Yun-Sheng Chen

Chrong-Jung Lin

Wen-Zhang Lin

Cheng-Jun Lin

Chrong Jung Lin

Chieh Lee

May-Be Chen

Wen Zhang Lin

A resistive memory device includes a bottom electrode, a top electrode and a resistance changing element. The top electrode is disposed above and spaced apart from the bottom electrode, and has a downward protrusion aligned with the bottom electrode. The resistance changing element covers side and bottom surfaces of the downward protrusion.

Resistive memory device with protrusion covered with resistance changing element and method for manufacturing the same

Resistive memory device and method for manufacturing with protrusion of electrode

A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a first transistor, a first resistive random access memory (RRAM) resistor, and a second RRAM resistor. The first resistor includes a first resistive material layer, a first electrode shared by the second resistor, and a second electrode. The second resistor includes the first electrode, a second resistive material layer, and a third electrode. The first electrode is electrically coupled to the first transistor.

Semiconductor device and method of manufacturing the same

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Hsinchu, Taiwan

Wang-Yi Lee