Samsung Display Co., Ltd.

Dongwoo Fine-chem Co., Ltd.

Wang-Woo Lee

Hong-Sick Park

Bong-Kyun Kim

Sam-Young Cho

Sang-Hoon Jang

O-Byoung Kwon

Sang-tae Kim

Ki-beom Lee

Young-Chul Park

In-Ho Yu

Joon-Woo Lee

Suck-Jun Lee

Young-Jun Jin

Young-Jin Yoon

Min-Ki Lim

Gyu-po Kim

Hyun-cheol Shin

Won-guk Seo

Kyong-Min Kang

Dong-Ki Kim

Jeong-Ho Lee

Sang-Woo Kim

Jong-Hyun Choung

Choong-Youl Im

Il-Jeong Lee

Shin-Il Choi

Young-woo Park

Ju-Won Yoon

Jean-Ho Song

Sun-Young Hong

Byung-Uk Kim

Young-jun Kim

Jung-Kyu Lee

Hyun-Cheol Shin

Su-Yeon Sim

Seung-Min Lee

Nam-Seok Suh

Suk-Il Yoon

Jong-Hyun Jeong

Won-Guk Seo

Seung-yeon Han

Sun-Joo Park

Soon-Beom Hur

Ki-Beom Lee

Do-Won Kim

Seok-Jun Jang

Kyung-Bo Shim

Young-Woo Park

Seung-Yeon Han

A method of manufacturing a thin film transistor (TFT) array substrate is disclosed. In one aspect, the method includes forming an active layer on a substrate, forming a first insulating layer on the substrate to cover the active layer, and forming a first gate electrode on the first insulating layer in an area corresponding to the active layer, doping the active layer with ion impurities, forming a second insulating layer on the first insulating layer to cover the first gate electrode, performing an annealing process on the active layer, forming a lower electrode of a capacitor on the second insulating layer, forming a third insulating layer on the second insulating layer to cover the lower electrode, wherein the third insulating layer has a dielectric constant that is greater than those of the first and second insulating layers, and forming an upper electrode of the capacitor on the third insulating layer.

Thin-film transistor array substrate, display device including the same, and method of manufacturing the thin-film transistor array substrate

An etchant includes: 5 to 20 wt % of persulfate, 1 to 10 wt % of at least one compound of an inorganic acid, an inorganic acid salt, or a mixture thereof, 0.3 to 5 wt % of a cyclic amine compound, 1 to 10 wt % of at least one compound of an organic acid, an organic acid salt, or a mixture thereof, 0.1 to 5 wt % of p-toluenesulfonic acid, and water, based on the total weight of the etchant. A copper-titanium etchant further includes 0.01 to 2 wt % of a fluoride-containing compound. A method of forming a display device using the etchant, and a display device, are also disclosed.

Etchant, display device and method for manufacturing display device using the same

An etching composition and a method of manufacturing a display substrate using the etching composition are disclosed. The etching composition includes phosphoric acid (HPO) of about 40% by weight to about 70% by weight, nitric acid (HNO) of about 5% by weight to about 15% by weight, acetic acid (CHCOOH) of about 5% by weight to about 20% by weight, and a remainder of water. Thus, a metal layer including copper may be stably etched.

Etching composition and method of manufacturing a display substrate using the system

An etchant composition includes about 25 percent by weight to about 35 percent by weight of phosphoric acid, about 3 percent by weight to about 9 percent by weight of nitric acid, about 10 percent by weight to about 20 percent by weight of acetic acid, about 5 percent by weight to about 10 percent by weight of a nitrate, about 6 percent by weight to about 15 percent by weight of a sulfonic acid, about 1 percent by weight to about 5 percent by weight of an amine compound including a carboxyl group, about 0.1 percent by weight to about 1 percent by weight of a water-soluble amino acid, about 0.01 percent by weight to about 1 percent by weight of an azole compound, and water.

Etchant composition, and method of manufacturing a display substrate using the same

An etching composition for a copper-containing layer includes about 0.1% to about 30% by weight of ammonium persulfate, about 0.1% to about 10% by weight of a sulfate, about 0.01% to about 5% by weight of an acetate and about 55% to about 99.79% by weight of water. The etching composition having improved stability during storage and an increased capacity for etching.

Etching composition, method of forming a metal pattern and method of manufacturing a display substrate

An etchant includes about 50% by weight to about 70% by weight of phosphoric acid, about 1% by weight to about 5% by weight of nitric acid, about 10% by weight to about 20% by weight of acetic acid, about 0.1% by weight to about 2% by weight of a corrosion inhibition agent including an azole-based compound and a remainder of water.

Etchant for metal layer including copper or a copper alloy, method of manufacturing a display substrate using the same and display substrate

A composition for removing a photoresist, the composition including about 1% by weight to about 10% by weight of tetramethyl ammonium hydroxide ('TMAH'), about 1% by weight to about 10% by weight of an alkanol amine, about 50% by weight to about 70% by weight of a glycol ether compound, about 0.01% by weight to about 1% by weight of a triazole compound, about 20% by weight to about 40% by weight of a polar solvent, and water, each based on a total weight of the composition.

Composition for removing a photoresist and method of manufacturing a thin-film transistor substrate using the composition

A display substrate having a low resistance signal line and a method of manufacturing the display substrate are provided. The display substrate includes an insulation substrate, a gate line, a data line and a pixel electrode. The gate line gate line is formed through a sub-trench and an opening portion. The sub-trench is formed in the insulation substrate and the opening portion is formed through a planarization layer on the insulation substrate at a position corresponding to the position of the sub-trench. The data line crosses the gate line. The pixel electrode is electrically connected to the gate line and the data line through a switching element. Thus, a signal line is formed through a trench formed by using a planarization layer and an insulation substrate, so that a resistance of the signal line may be reduced.

Display substrate and method of manufacturing the same

Exemplary embodiments of the present invention provide a metal wiring etchant. A metal wiring etchant according to an exemplary embodiment of the present invention includes ammonium persulfate, an organic acid, an ammonium salt, a fluorine-containing compound, a glycol-based compound, and an azole-based compound.

Etchant for metal wiring and method for manufacturing metal wiring using the same

Growing community of inventors

Suwon-si, South Korea

Wang-Woo Lee