Samsung Electronics Co., Ltd.

Wang Hyun Kim

Tae Chan Kim

Dong Ki Min

Young Jin Kim

Kwang Hyun Lee

Hyuk Soon Choi

Yo Hwan Noh

Dae Kwan Kim

Se Hwan Yun

Seunghoon Lee

Sunjung Kim

Kwanghyun Lee

Seokyong Hong

Sun Hwa Jung

JuHwan Jung

Hye Kyoung Jung

An image sensor according to an example embodiment concepts includes a pixel array including pixels, and each of the pixels includes photoelectric conversion elements. The photoelectric conversion elements independently operating to detect a phase difference. The image sensor further includes a control circuit configured to independently control exposure times of each of the photoelectric conversion elements included in each of the pixels.

Image sensor including a pixel having photoelectric conversion elements and image processing device having the image sensor

A method of calculating, using a depth sensor, a distance excluding an ambiguity distance including outputting a modulated light signal output from a light source to an object, receiving the modulated light signal reflected by the object, calculating a distance between the light source and the object using the reflected modulated light signal input to photo gates in conjunction with demodulation signals supplied to the photo gates, the calculating including calculating, using the modulated light signal, at least one distance farther than a maximum measurable distance, and setting the at least one distance to be equal to the maximum measurable distance may be provided. A range of the distance farther than the maximum measurable distance can be determined according to a duty ratio of the modulated light signal.

Methods for calculating distance using depth sensor and apparatuses performing the same

A semiconductor device may include a plurality of banks; and a control unit configured to receive a command from an external device and independently control the plurality of banks according to the received command. Each bank comprises a pixel array including a plurality of pixels; a row decoder configured to activate word lines connected to the plurality of pixels under control of the control unit; a column decoder configured to activate bit lines connected to the plurality of pixels under control of the control unit; a sense amplifier and write driver configured to control and detect respective voltages of the activated bit lines to provide respective amplified voltages; and an input/output buffer configured to output data states of the pixels based on the respective amplified voltages. Related methods of operation are also discussed.

Semiconductor devices having image sensor and memory device operation modes

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Namyangju-si, South Korea

Wang Hyun Kim