Sifotonics Technologies Co., Ltd.

The Ncs Testing Technology Co., Ltd.

Ncs Jiangsu Testing Technology Co., Ltd.

Wang Chen

Dong Pan

Ching-yin Hong

Pengfei Cai

Mengyuan Huang

Su Li

Liangbo Wang

Tuo Shi

Tzung-I Su

Nai Zhang

Yunhai Jia

Liangjing Yuan

Changhua Chen

Yanwu Zhang

Xiaoke Hao

Runpeng Wang

Danyang Zhi

Xuehua Wang

Zhenning Wu

Naichuan Zhang

Zhaodong Guo

Xinyang Dong

Tzung I Su

Siying Liu

The present invention discloses a combined oxygen, nitrogen and hydrogen joint determination device and method based on thermal conductivity-infrared technique. In the device, a melting and extraction system comprises a carrier gas introduction pipeline, a chamber valve, an impulse furnace and a dust filter; an analytical gas transmission system comprises a flush valve, a bypass valve, a mass flowmeter and a first switching valve; a signal detection system comprises an infrared cell, an analysis purification reagent tube and a thermal conductivity cell; and a signal analysis system comprises a controller and a processor. The present invention realizes different joint determination modes by switching different gas paths, which can meet different determination requirements of different users.

Combined oxygen, nitrogen and hydrogen joint determination device and method based on thermal conductivity-infrared technique

Various embodiments of a fully integrated avalanche photodiode receiver and manufacturing method thereof are described herein. A photonic device includes a silicon-on-insulator (SOI) substrate with a buried oxide (BOX) layer therein, an avalanche photodiode integrated with the SOI substrate, a capacitor integrated with the SOI substrate, a resistor integrated with the SOI substrate, and silicon passive waveguides as well as bonding pads integrated with the SOI substrate.

Fully integrated avalanche photodiode receiver

Various embodiments of a compensated photonic device structure and fabrication method thereof are described herein. In one aspect, a photonic device may include a substrate and a functional layer disposed on the substrate. The substrate may be made of a first material and the functional layer may be made of a second material that is different from the first material. The photonic device may also include a compensation region formed at an interface region between the substrate and the functional layer. The compensation region may be doped with compensation dopants such that a first carrier concentration around the interface region of function layer is reduced and a second carrier concentration in a bulk region of functional layer is reduced.

Compensated photonic device structure and fabrication method thereof

Various embodiments of a compensated photonic device structure and fabrication method thereof are described herein. A photonic device may include a silicon-on-insulator (SOI) substrate with a buried oxide (BOX) layer therein, a Si waveguide and an n-type contact layer formed on the BOX layer, a Si multiplication layer disposed on the n-type contact layer, a p-type Si charge layer disposed on the Si multiplication layer, a germanium (Ge) absorption layer disposed on the p-type Si charge layer, a p-type contact layer disposed on the Ge absorption layer, and a metal layer disposed on the p-type contact layer. A compensated region may be formed between the p-type Si charge layer and the Ge absorption layer with a portion of the compensated region in the p-type Si charge layer and another portion of the compensated region in the Ge absorption layer.

Avalanche photodiodes (APDs) having at least one top stressor layer disposed on a germanium (Ge) absorption layer are described herein. The top stressor layer can increase the tensile strain of the Ge absorption layer, thus extending the absorption of APDs to longer wavelengths beyond 1550 nm. In one embodiment, the top stressor layer has a four-layer structure, including an amorphous silicon (Si) layer disposed on the Ge absorption layer; a first silicon dioxide (SiO) layer disposed on the amorphous Si layer, a silicon nitride (SiN) layer disposed on the first SiOlayer, and a second SiOlayer disposed on the SiN layer. The Ge absorption layer can be further doped by p-type dopants. The doping concentration of p-type dopants is controlled such that a graded doping profile is formed within the Ge absorption layer to decrease the dark currents in APDs.

High performance GeSi avalanche photodiode operating beyond Ge bandgap limits

Various embodiments of a novel structure of a Ge/Si avalanche photodiode with an integrated heater, as well as a fabrication method thereof, are provided. In one aspect, a doped region is formed either on the top silicon layer or the silicon substrate layer to function as a resistor. When the environmental temperature decreases to a certain point, a temperature control loop will be automatically triggered and a proper bias is applied along the heater, thus the temperature of the junction region of a Ge/Si avalanche photodiode is kept within an optimized range to maintain high sensitivity of the avalanche photodiode and low bit-error rate level.

Ge/Si avalanche photodiode with integrated heater and fabrication method thereof

A high-speed germanium on silicon (Ge/Si) avalanche photodiode may include a substrate layer, a bottom contact layer disposed on the substrate layer, a buffer layer disposed on the bottom contact layer, an electric field control layer disposed on the buffer layer, an avalanche layer disposed on the electric field control layer, a charge layer disposed on the avalanche layer, an absorption layer disposed on the charge layer, and a top contact layer disposed on the absorption layer. The electric field contact layer may be configured to control an electric field in the avalanche layer.

High-speed germanium on silicon avalanche photodiode

Various embodiments of a germanium-on-silicon (Ge&#x2014;Si) avalanche photodiode are provided. In one aspect, the Ge&#x2014;Si avalanche photodiode utilizes a silicon carrier-energy-relaxation layer to reduce the energy of holes drifting into absorption layer where the absorption material has lower ionization threshold, thereby suppressing multiplication noise and increasing the gain-bandwidth product of the avalanche photodiode.

Ge&#x2014;Si avalanche photodiode with silicon carrier-energy-relaxation layer and edge electric field buffer region

Various embodiments of a photonic device and fabrication method thereof are described herein. A device may include a substrate, a bottom contact layer, a current confinement layer, an intrinsic layer, an absorption layer, and a top contact layer. The bottom contact layer may be of a first polarity and may be disposed on the substrate. The current confinement layer may be disposed on the bottom contact layer. The intrinsic layer may be disposed on the current confinement layer. The absorption layer may be disposed on the intrinsic layer. The top contact layer may be of a second polarity and may be disposed on the absorption layer. The second polarity is opposite to the first polarity.

Photonic device structure and fabrication method thereof

Ge/Si avalanche photodiode with integrated heater and fabrication thereof

A device, such as a silicon modulator, in accordance with the present disclosure employs PN diodes without sacrificing the modulation depth, while achieving lower loss and better impedance matching to 50-Ohm drivers. In one embodiment, the device includes an input waveguide, an input optical splitter coupled to the input waveguide, first and second optical phase shifters coupled to the input optical splitter, an output optical splitter coupled to the first and second phase shifters, and an output waveguide coupled to the output optical splitter. The phase shifters are designed with variant capacitance per unit length.

Electro-optic silicon modulator with longitudinally nonuniform modulation

Various embodiments of a germanium-on-silicon (Ge&#x2014;Si) photodiode are provided along with the fabrication method thereof. In one aspect, a Ge&#x2014;Si photodiode includes a doped bottom region at the bottom of a germanium layer, formed by thermal diffusion of donors implanted into a silicon layer. The Ge&#x2014;Si photodiode further includes a doped sidewall region of Ge mesa formed by ion implantation. Thus, the electric field is distributed in the intrinsic region of the Ge&#x2014;Si photodiode where there is low dislocation density. The doped bottom region and sidewall region of the Ge layer prevent electric field from penetrating into the Ge&#x2014;Si interface and Ge mesa sidewall region, where a large amount of dislocations are distributed. This design significantly suppresses dark current.

Ge&#x2014;Si P-I-N photodiode with reduced dark current and fabrication method thereof

Various embodiments of a photonic device and fabrication method thereof are provided. In one aspect, a device includes a substrate, a current confinement layer disposed on the substrate, an absorption layer disposed in the current confinement layer, and an electrical contact layer disposed on the absorption layer. The current confinement layer is doped in a pattern and configured to reduce dark current in the device. The photonic device may be a photodiode or a laser.

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Beijing, China

Wang Chen