Taiwan Semiconductor Manufacturing Comp. Ltd.

Wan-te Chen

Chung-Hui Chen

Tsung-Hsin Yu

Tzu Ching Chang

A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a first active region extending along a first direction. The semiconductor device also includes a second active region extending along the first direction. The semiconductor device further includes a first gate extending along a second direction perpendicular to the first direction. The first gate has a first segment disposed between the first active region and the second active region. In addition, the semiconductor device includes a first electrical conductor extending along the second direction and across the first active region and the second active region, wherein the first segment of the first gate and the first electrical conductor are partially overlapped to form a first capacitor.

Growing community of inventors

TAIPEI COUNTY, Taiwan

Wan-te Chen