Eugene Technology Co., Ltd.

Wan-Suk Oh

Seung-Woo Shin

Woo-Duck Jung

Ho-Min Choi

Koon-Woo Lee

Cha-Young Yoo

Hai-Won Kim

Sung-Kil Cho

Ki-Ho Kim

Hyuk-Lyong Gwon

A method for forming an amorphous thin film comprises: forming a seed layer on a surface of a base by supplying aminosilane-based gas on the base; forming the first boron-doped amorphous thin film by supplying the first source gas including boron-based gas on the seed layer; and forming the second boron-doped amorphous thin film by supplying the second source gas including boron-based gas on the first amorphous thin film.

Method for forming amorphous thin film

Provided is a method and apparatus for depositing an amorphous silicon film. The method includes supplying a source gas and an atmospheric gas onto a substrate in a state where the substrate is loaded in a chamber to deposit the amorphous silicon film on the substrate. The atmospheric gas includes at least one of hydrogen and helium. The source gas includes at least one of silane (SiH), disilane (SiH), and dichlorosilane (SiClH).

Method and apparatus for depositing amorphous silicon film

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Icheon-si, South Korea

Wan-Suk Oh