Korea Institute of Science and Technology

Snu Rdb Foundation

Samsung Electronics Co., Ltd.

Lg Display Co., Ltd.

Seoul National University

Osong Medical Innovation Foundation, Korea University Research and Business Foundation

Wan Ki Bae

Sang-Soo Lee

Heesuk Kim

Jeong Gon Son

Jong Hyuk Park

Kook Heon Char

Eun Joo Jang

Min Cheol Park

Jae Young Choi

Young Jin Kim

Chang-Hee Lee

Seong Hoon Lee

Kookheon Char

Seong Jin Choi

Bulliard Xavier

Jinhan Cho

Seong-Hoon Lee

Ho-Cheol Kang

Young-Hoon Noh

Jeong Hun Kwak

Keun-Young Shin

Hyuck Hur

Jae Hoon Lim

Hyo Won Kwon

Yu Jin Kang

Dong Gu Lee

Ikjun Cho

Disclosed is a quantum dot light emitting device including a ligand-substituted quantum dot light emitting layer with a polymer having amine groups. The introduction of the ligand-substituted quantum dot light emitting layer with a polymer having amine groups changes the energy level of an electron transport layer and enables control over the charge injection properties of the device so that the flow of electrons can be controlled. In addition, the ligand substitution is effective in removing oleic acid as a stabilizer of quantum dots to prevent an increase in driving voltage caused by the introduction of the additional material, achieving markedly improved efficiency of the device. Also disclosed is a method for fabricating the quantum dot light emitting device.

Quantum dot light emitting device including ligand-substituted quantum dot light emitting layer with polymer having amine groups and method for fabricating the same

A wavy metal nanowire network thin film, a stretchable transparent electrode including the metal nanowire network thin film, and a method for forming the metal nanowire network thin film. More specifically, it relates to a wavy nanowire network structure based on straight metal nanowires, a method for producing the nanowire network structure, and a flexible electrode including the wavy metal nanowire structure. The flexible electrode of the present invention is transparent and stretchable and exhibits stable performance even when subjected to various deformations.

Wavy metal nanowire network thin film, stretchable transparent electrode including the metal nanowire network thin film and method for forming the metal nanowire network thin film

Disclosed is a multilevel nonvolatile resistive random-access memory device including a lower electrode, an upper electrode, and an insulation film interposed between the lower electrode and the upper electrode. Each of the lower electrode and the upper electrode includes a plate-shaped portion, and a patterned portion formed on the plate-shaped portion, and the patterned portion includes a protruding 3-dimensional prism structure pattern in which a plurality of prism-shaped structures is repeatedly arranged at a constant interval in a given direction. The patterned portion of the lower electrode and the patterned portion of the upper electrode are arranged to face each other, and a longitudinal direction of the prism-shaped structures of the lower electrode patterned portion and a longitudinal direction of the prism-shaped structures of the upper electrode patterned portion cross each other.

Non-volatile resistive random-access memory device with reliable operation indicator, device-to-device uniformity, and multilevel cell storage, and method of manufacturing the same

Methods for producing nanoparticle thin films are disclosed. According to one of the methods, a nanoparticle thin film is produced by modifying the surface of nanoparticles to allow the nanoparticles to be charged, controlling an electrostatic attractive force between the charged nanoparticles and a substrate and a repulsive force between the individual nanoparticles by a variation in pH to control the number density of the nanoparticles arranged on the substrate.

Method for dispersing nanoparticles and methods for producing nanoparticle thin films by using the same

The present invention relates to a quantum dot light emitting element which can form a quantum light emitting layer configured of charge transporting particles and quantum dots and a charge transporting layer in a solution process, to reduce process expense, and a method for manufacturing the same. The quantum dot light emitting element includes a substrate, an anode formed on the substrate, a quantum light emitting layer formed on the anode, the quantum light emitting layer having charge transporting particles and quantum dots mixed therein, and a cathode formed on the quantum light emitting layer.

Quantum dot light emitting element and method for manufacturing the same

Provided are quantum dots having a gradual composition gradient shell structure which have an improved luminous efficiency and optical stability, and a method of manufacturing the quantum dots in a short amount of time at low cost. In the method, the quantum dots can be manufactured in a short amount of time at low cost using a reactivity difference between semiconductor precursors, unlike in uneconomical and inefficient conventional methods where shells are formed after forming cores and performing cleaning and redispersion processes. Also, formation of the cores is followed by formation of shells having a composition gradient.

Quantum dots having composition gradient shell structure and manufacturing method thereof

Growing community of inventors

Seoul, South Korea

Wan Ki Bae