Hefei Core Storage Electronic Limited

Wan-Jun Hong

Qi-Ao Zhu

Xin Wang

Jing Zhang

Yang Zhang

Xu Hui Cheng

Chong Peng

Jian Hu

Chih-Ling Wang

Kuai Cao

Zhi Wang

Tsung-Lin Wu

Tong-Jin Liu

Ya-Lin Zhu

Yankai Dai

Wenbin Tao

Mengkai Wu

Hao Yang

A data storing method, a memory storage device, and a memory controller are provided. The method includes: obtaining a plurality of program/erase counts and a plurality of program/erase period values of a plurality of physical erasing units in a storage area; calculating a plurality of data cold and hot degrees according to the plurality of program/erase counts and the plurality of program/erase period values; selecting a first physical erasing unit according to the plurality of data cold and hot degrees, and selecting a second physical erasing unit according to the plurality of data cold and hot degrees; and writing data stored in the first physical erasing unit to the second physical erasing unit.

Data storing method, memory storage device and memory controller

A memory operation control method, a memory storage device, and a memory control circuit unit are disclosed. The method includes the following. Management data is established, which includes status recording data. First status information corresponding to a first physical unit is stored in the status recording data. An operation command is received from a host system. The management data is queried according to the operation command. Whether to allow an execution of the operation command on the first physical unit is determined according to a query result.

Memory operation control method, memory storage device and memory control circuit unit

A memory polling method, a memory storage device and a memory control circuit unit are provided. The memory polling method includes: detecting a plurality of busy times corresponding to a plurality of physical units when executing a plurality of first commands; counting the busy times corresponding to the physical units to generate a count statistic value, and determine a delay time based on the count statistic value; and transmitting a plurality of status requests to a rewritable non-volatile memory module after the delay time.

Memory polling method, memory storage device and memory control circuit unit

A memory management method for a memory storage device is provided. The memory management method includes: detecting effective information of at least one operation event performed by the memory storage device in a first mode; and adjusting a threshold value according to the effective information. The threshold value is configured to determine whether to instruct the memory storage device to enter the first mode.

Memory management method, memory storage device and memory control circuit unit

A memory management method, a memory storage device and a memory control circuit unit are disclosed. The method includes: performing a first write operation to store first data to a first physical unit; recording first unit management information corresponding to the first write operation, wherein the first unit management information reflects a usage order of first used physical units, and the first used physical units include the first physical unit; performing data merge operation to copy at least a part of data stored in the first physical unit to a second physical unit; and after the data merge operation is performed, recording second unit management information according to the first unit management information, wherein the second unit management information reflects a usage order of second used physical units. The second used physical units include the second physical unit but do not include the first physical unit.

Method for recording unit management information, memory storage device and memory control circuit unit

A multi-channel memory storage device, a memory control circuit unit, and a data reading method are provided. The method includes: determining whether a storage space of a buffer memory is insufficient when a multi-channel access is performed; issuing a data read command corresponding to each of a plurality of multi-channels to a rewritable non-volatile memory module according to a logical address in a host read command in response to insufficient storage space of the buffer memory to read data corresponding to each of the plurality of multi-channels from a data storage area to a data cache area via the plurality of multi-channels; and allocating the storage space of the buffer memory to the rewritable non-volatile memory module after the storage space of the buffer memory is released and issuing a cache read command to move first data in data temporarily stored in the data cache area to the buffer memory.

Multi-channel memory storage device, memory control circuit unit and data reading method

A memory management method. The memory management method includes: receiving a command from a host system; sending a command sequence corresponding to the command to a rewritable non-volatile memory module; determining a delay time; and sending a plurality of polling commands to the rewritable non-volatile memory module after the delay time.

A data merging method for flash memory, a flash memory control circuit unit and a flash memory storage device are provided. The disclosure is applicable to a flash memory, an embedded memory device or a solid state drive of 3D structure. The method includes: selecting at least one source physical erasing unit from at least one first physical erasing unit according to a valid data count of the at least one first physical erasing unit and a valid data count of each of a plurality of memory sub-modules; and copying valid data in the at least one source physical erasing unit to at least one destination physical erasing unit to perform a valid data merging operation.

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Province, China

Wan-Jun Hong