Kabushiki Kaisha Riken

Fuji Electric Co., Ltd.

Wan Jiang

Tetsuo Uchiyama

Masahiro Uno

Mutsumi Nagumo

Kenichi Tsuji

Noritomo Hirayama

Satoru Sakaue

Nobuhisa Kato

Yohichi Yamashita

The MoSi,heating element has not been so resistant under the low-temperature heating, because the low-temperature oxidation, which is attributable to the grain boundary oxidation, occurred. In the present invention, long life under the low-temperature heating is attained by the following two structures. (1) The MoSi,grains have a network structure and are linked three dimensionally. (2) The secondary, silica-bearing oxide or glass phase forms a net-like structure around the MoSi,grains.

Molybdenum disilicide heating element and its production method

In an infrared radiation source containing hot-pressed molybdenum disilicide reinforced with silicon carbide whiskers as the illuminant thereof, terminal portions of the illuminant having a protective dense silica film of 5 to 20 .mu.m in thickness formed on the surface thereof which portions are to be heated at a temperature of 400 to 800.degree. C. are either set to have a current density of at most 12 A/mm.sup.2 or disposed in dry air having a relative humidity at 25.degree. C. of at most 30% (absolute humidity: 0.00588). As a result, the low-temperature oxidation phenomenon that would otherwise be developed in the terminal portions of the illuminant is suppressed. Thus, there can be obtained an infrared radiation source containing an illuminant made of molybdenum disilicide reinforced with silicon carbide whiskers and having a long serviceable life span.

Molybdenum disilicide ceramic composite infrared radiation source or

A ceramic heating element includes a heat-generating portion 1 formed of a ceramic composite material with 3 to 40 vol. % of silicon carbide (SiC) whiskers and the balance substantially of molybdenum disilicide (MoSi.sub.2), and electrode portions 2a and 2b provided on both ends of the heat-generating portion 1.

Ceramic heating element made of molybdenum disilicide and silicon

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Tokyo, Japan

Wan Jiang