Samsung Electronics Co., Ltd.

Wan-Jae Park

Kyoung-woo Lee

Kyung-Tae Lee

Jeong-Hoon Ahn

Il-Goo Kim

Yong-Jun Lee

Soo-Geun Lee

Kyoung-Woo Lee

Mu-Kyeng Jung

Jae-Hak Kim

Embodiments of the invention include a MIM capacitor that has a high capacitance that can be manufactured without the problems that affected the prior art. Such a capacitor includes an upper electrode, a lower electrode, and a dielectric layer that is intermediate the upper and the lower electrodes. A first voltage can be applied to the upper electrode and a second voltage, which is different from the first voltage, can be applied to the lower electrode. A wire layer, through which the first voltage is applied to the upper electrode, is located in the same level as or in a lower level than the lower electrode.

Integrated circuit capacitor structure

Embodiments of the invention include a MIM capacitor having a high capacitance with improved manufacturability. Such a capacitor includes an upper electrode, a lower electrode, and a dielectric layer that is intermediate the upper and the lower electrodes. A first voltage can be applied to the upper electrode and a second voltage, which is different from the first voltage, can be applied to the lower electrode. A wire layer, through which the first voltage is applied to the upper electrode, is located in the same level as or in a lower level than the lower electrode.

Growing community of inventors

Kyungki-do, South Korea

Wan-Jae Park