Samsung Electronics Co., Ltd.

Ulvac, Inc.

New Power Plasma Co., Ltd.

Wan-Goo Hwang

Do-In Bae

Dae-Kyu Choi

Jin-Man Kim

Yun-sik Yang

Young-Min Min

Seung-Ki Chae

Jung-Hyun Hwang

Hyung-Sik Hong

Seiichi Takahashi

Ki-Young Yun

No-Hyun Huh

Tae-Won Lee

Kwang-Myung Lee

Kengo Tsutsumi

Gyeong-su Keum

Chung-Hun Park

Shinji Yanagisawa

Jae-Im Yun

Hyun-wook Lee

Guk-Kwang Kim

Jeong-Soo Suh

Sung-Il Han

Seong-Ju Choi

Jaung-Joo Kim

Bu-Cheul Lee

A method for manufacturing a semiconductor device may include: forming a main magnetic field having an axis, and forming a subsidiary magnetic field substantially parallel to the axis; applying an alternating current along a path between the main and the subsidiary magnetic fields; allowing a gas to flow along a flow path along the path of the current so that a gas plasma is generated from the gas; providing the gas plasma into a chamber separated from a position where the gas plasma is generated; and performing a process for manufacturing a semiconductor device by employing the gas plasma.

Apparatus for generating gas plasma, gas composition for generating plasma and method for manufacturing semiconductor device using the same

An apparatus and a method form a thin layer on each of multiple semiconductor substrates. A processing chamber of the apparatus includes a boat in which the semiconductor substrates are arranged in a vertical direction. A vaporizer vaporizes a liquid metal precursor into a metal precursor gas. A buffer receives a source gas from the vaporizer and increases a pressure of the source gas to higher than atmospheric pressure, the source gas including the metal precursor gas. A first supply pipe connects the buffer and the processing chamber, the first supply pipe including a first valve for controlling a mass flow rate of the source gas. A second supply pipe connects the vaporizer and a pump for creating a vacuum inside the processing chamber, the second supply pipe including a second valve for exhausting a dummy gas during an idling operation of the vaporizer.

Method for forming a thin layer on semiconductor substrates

In this etching method, since an etching gas is introduced before introduction of free radicals into a processing chamber, the etching gas has been adsorbed on the surface of substrates when the free radicals are introduced. Accordingly, the free radicals react with the etching gas adsorbed on the surface of the substrates, and the reaction proceeds uniformly on the surface of the substrate. As a result, nonuniform etching does not occur on the surface of the substrate. Moreover, since the reaction between the etching gas and the free radicals occurs on the surface of the substrate, an intermediate product produced according to the reaction between the etching gas and the free radicals reacts with an etching object promptly. Therefore, the intermediate product is not exhausted from the processing chamberexcessively, and hence the etching efficiency is high. As a result, according to this etching method, not only the in-plane distribution of the etching amount becomes more uniform, but also the etching rate is increased more than in the conventional etching method.

Etching method

A method for generating a plasma. A gas flows along a flow path having the displacement identical to the lines of magnetic force of the main magnetic field, and high frequency alternating current is applied to the gas, thereby generating a gas plasma. For example, a gas is flowed through a pipe in a first direction. Electricity is conducted through the pipe in substantially the first direction. And a magnetic field is applied along a second direction (e.g., perpendicular to the first direction) to the gas flowing in the pipe such that a plasma is induced in the pipe.

Method for generating gas plasma

A method and an apparatus for measuring an inclination angle of an ion beam when ions are implanted into a semiconductor wafer include an ion current measuring section having a Faraday cup assembly which is rotatably installed, an angle varying section for adjusting an alignment angle of the Faraday cup assembly, and an inclination angle measuring section for measuring the inclination angle of the ion beam based on a variation of the ion current caused by a variation of the alignment angle of the Faraday cup assembly. By measuring the inclination angle of the ion beam, the incident angle of the ion beam, which is incident into the wafer during the ion implantation process, can be precisely adjusted to a predetermined critical angle. Accordingly, the channeling effect and shadow effect can be effectively prevented. The amount of the ions included in the ion beam can be precisely measured, so the amount of ions implanted into the wafer can be precisely adjusted.

Method and apparatus for measuring inclination angle of ion beam

A metal gasket for a semiconductor fabrication chamber capable of preventing base plate metal contamination in the chamber, wherein the metal gasket includes a diffusion barrier layer interposed between a base plate and an anti-corrosive coating layer, and wherein the diffusion barrier layer prevents elements of the base plate from being diffused to the anti-corrosive coating layer. Accordingly, the diffusion barrier layer prevents attack on the anti-corrosive coating layer.

Metal gasket for a semiconductor fabrication chamber

Growing community of inventors

Yongin-si, South Korea

Wan-Goo Hwang