Skhynix Inc.

Wan-Gee Kim

Kee-Jeung Lee

Beom-Yong Kim

Hyung-Dong Lee

Hyo-June Kim

Woo-Young Park

An electronic device includes a semiconductor memory that includes: a first conductive pattern disposed over a substrate; a first selection element layer disposed over the first conductive pattern and having one or more first grooves therein, the first grooves overlapping the first conductive pattern; a first variable resistance layer whose sidewalls and bottom are surrounded by the first selection element layer, the first variable resistance layer being buried in the first groove; and a second conductive pattern that overlaps the first variable resistance layer and is disposed over the first variable resistance layer.

Electronic device and method for fabricating the same

An electronic device includes a semiconductor memory. The semiconductor memory includes a plurality of first lines extending in a first direction, a plurality of second lines extending in a second direction crossing the first direction, a resistance variable layer interposed between the first lines and the second lines, a tunnel barrier layer interposed between the resistance variable layer and the first lines, and an intermediate electrode layer interposed between the resistance variable layer and the tunnel barrier layer. The tunnel barrier layer and the intermediate electrode layer overlap with at least two neighboring intersection regions of the first lines and the second lines.

Memory device having a tunnel barrier layer in a memory cell, and electronic device including the same

A semiconductor device includes a first conductive layer, a second conductive layer spaced from the first conductive layer, a variable resistance layer interposed between the first and second conductive layers, and an impurity-doped layer provided over a side surface of the variable resistance layer. The variable resistance layer has a smaller width than the first and the second conductive layers.

Semiconductor device and electronic device including the same

An electronic device includes a switch element. The switch element includes a first electrode including a first metal nitride which is conductive, a second electrode, a switching layer interposed between the first electrode and the second electrode, and a first barrier layer which is interposed between the first electrode and the switching layer and includes a second metal nitride which is insulative, wherein a metal in the first metal nitride is the same as a metal in the second metal nitride, and a metal-to-nitrogen bonding ratio of the first metal nitride is different from a metal-to-nitrogen bonding ratio of the second metal nitride.

Electronic device including a switch element in which a metal nitride layer has a nitrogen concentration increasing as a closer distance from a switching layer, and method for fabricating the same

A method for fabricating a variable resistance memory device includes forming an oxygen-deficient first metal oxide layer over a first electrode, forming an oxygen-rich second metal oxide layer over the first metal oxide layer, treating the first and second metal oxide layers with hydrogen-containing plasma, forming an oxygen-rich third metal oxide layer, and forming a second electrode over the third metal oxide layer.

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Icheon, South Korea

Wan-Gee Kim