United Microelectronics Corp.

Fujian Jinhua Integrated Circuit Co., Ltd.

Wan-Chi Wu

Chiu-Hsien Yeh

Chien-Cheng Tsai

Kai-Ping Chen

Hui-Ling Chuang

Chih-Chi Cheng

Hong-Ru Liu

Hung-Jung Yan

A dynamic random access memory (DRAM) includes a first bit line extending along a first direction, a first buried word line extending along a second direction, and an active region overlapping part of the first bit line and part of the first buried word line. Preferably, the active region comprises a V-shape. Moreover, the DRAM also includes at least a storage node contact overlapping one end of the active region, in which the storage node contact includes an ellipse.

Dynamic random access memory

A manufacturing method of an epitaxial contact structure in a semiconductor memory device includes the following steps. A recess is formed in a semiconductor substrate by an etching process. An etching defect is formed in the recess by the etching process. An oxidation process is performed after the etching process. An oxide layer is formed in the recess by the oxidation process, and the etching defect is encompassed by the oxide layer. A cleaning process is performed after the oxidation process. The oxide layer and the etching defect encompassed by the oxide layer are removed by the cleaning process. An epitaxial growth process is performed to form an epitaxial contact structure in the recess after the cleaning process.

Manufacturing method of epitaxial contact structure in semiconductor memory device

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Tainan, Taiwan

Wan-Chi Wu