Osram Opto Semiconductors Gmbh

Siemens Aktiengesellschaft

Osram Gmbh

Siemens Microelectronics Limited

Walter Wegleiter

Karl Weidner

Ralph Wirth

Bernd Barchmann

Axel Kaltenbacher

Jan Marfeld

Oliver Wutz

Stefan Illek

Andreas Ploessl

Klaus Streubel

Norbert Stath

Ernst Nirschl

Johann Ramchen

Thomas Schwarz

Reiner Windisch

Bert Braune

Ines Pietzonka

Peter Stauss

Andreas Plöβl

Stefan Stegmeier

Wilhelm Stein

Hans Wulkesch

Gudrun Diepold

Frank Singer

Siegfried Herrmann

Georg Bogner

Matthias Sabathil

Stefan Grötsch

Jürgen Moosburger

Jörg Erich Sorg

Britta Göötz

Moritz Engl

Werner Spaeth

Andreas Plössl

Stefan Gruber

Helmut Fischer

Georg Dirscherl

Juergen Moosburger

Andreas Plößl

Werner Kuhlmann

Elmar Baur

Günther Grönninger

Peter Heidborn

Paola Altieri-Weimar

Caroline Cassignol

Rudolf Buchberger

Matthias Rebhan

Christian Jung

Olaf Schoenfeld

Muk Wai Lui

An optoelectronic semiconductor component includes an optoelectronic semiconductor chip having a top area at a top side, a bottom area at an underside, at least one side area connecting the top area and the bottom area; electrical contact locations at the top area or at the bottom area of the optoelectronic semiconductor chip; and a molded body, wherein the molded body surrounds the optoelectronic semiconductor chip at all side areas at least in places, the molded body is electrically insulating, and the molded body is free of any conductive element that completely penetrates the molded body.

Optoelectronic semiconductor component

A method of producing an optoelectronic semiconductor component includes providing a carrier; arranging at least one optoelectronic semiconductor chip at a top side of the carrier, wherein the semiconductor chip includes semiconductor layers deposited on a substrate; forming a shaped body around the at least one optoelectronic semiconductor chip, wherein the shaped body surrounds all side areas of the at least one optoelectronic semiconductor chip and at least some of the layers deposited on the substrate are free of the shaped body such that these layers are not covered or completely exposed; and removing the carrier.

An optoelectronic semiconductor component includes an optoelectronic semiconductor chip having a top area at a top side, a bottom area at an underside, side areas connecting the top area and the bottom area, and epitaxially produced layers; electrical n- and p-side contacts at the bottom area of the optoelectronic semiconductor chip; and an electrically insulating shaped body, wherein the shaped body surrounds the optoelectronic semiconductor chip at its side areas, and the epitaxially produced layers are free from the shaped body.

A method of producing an optoelectronic semiconductor component includes providing a carrier, arranging at least one optoelectronic semiconductor chip at a top side of the carrier, applying a phosphor layer at the at least one semiconductor chip, forming a shaped body around the at least one optoelectronic semiconductor chip, wherein the shaped body surrounds all side areas of the at least one optoelectronic semiconductor chip, and removing the carrier, wherein the phosphor layer is applied before forming the shaped body.

An optoelectronic semiconductor component is specified that has a semiconductor chip having a main side, the main side comprising a plurality of emission fields that are arranged next to one another. The emission fields are individually and independently actuatable and, during operation, they are each used to couple radiation out of the semiconductor chip. The main side has reflective partitions mounted on it that are arranged between adjacent emission fields and at least partially surround the emission fields in a plan view of the main side. In addition, the main side has a conversion element mounted on it, having an underside, which faces the semiconductor chip, and an averted top. The partitions are formed from a different material from the semiconductor material of the semiconductor chip and jut out from the semiconductor chip in a direction away from the main side. The conversion element covers at least one emission field at least partially and is connected to said emission field in a mechanically robust fashion. The underside of the conversion element in the region of the covered emission field juts out from the partitions in a direction away from the main side by no more than 10% of the height of the partitions.

Optoelectronic semiconductor component and method for fabricating an optoelectronic semiconductor component

An optoelectronic semiconductor component includes an optoelectronic semiconductor chip having a top area at a top side, a bottom area at an underside, and side areas connecting the top area and the bottom area; electrical contact locations at the top area or at the bottom area of the optoelectronic semiconductor chip; and an electrically insulating shaped body, wherein the optoelectronic semiconductor chip is a flip-chip having the electrical contract locations only at one side, either the underside or the top side, the shaped body surrounds the optoelectronic semiconductor chip at its side areas, and the shaped body is free of a via that electrically connects the optoelectronic semiconductor chip.

The invention relates to a device (), comprising at least one optoelectronic semiconductor component () and a substrate (), on which the semiconductor component is arranged, wherein an insulating layer () is adjacent to a lateral surface () that bounds the semiconductor component; a contact track () is arranged on a radiation passage surface of the semiconductor component and is connected to an electrically conductive manner to the semiconductor component; the contact track extends beyond the lateral surface of the semiconductor component and is arranged on the insulating layer; and the contact track is relieved with respect to a thermomechanical load occurring perpendicularly to the lateral surface.

Optoelectronic semiconductor device having contact track with relieved thermo-mechanical stress

An optoelectronic device and a method for producing an optoelectronic device are disclosed. An embodiment of an optoelectronic device includes a carrier, an electrically conductive layer arranged on the carrier, at least one semiconductor chip comprising an active layer for generating electromagnetic radiation, wherein the semiconductor chip is electrically conductively and mechanically connected with the carrier via the electrically conductive layer. The device further comprises a holder, wherein a surface of the carrier remote from the semiconductor chip is arranged on the holder, wherein the carrier is mechanically connected with the holder by at least one fastening element and is fastened to the holder, wherein the fastening element passes completely through the carrier, and wherein the semiconductor chip is electrically conductively connected to the holder by the fastening element.

Optoelectronic component and method for the production thereof

An optoelectronic semiconductor component includes an optoelectronic semiconductor chip having side areas covered by a shaped body; at least one via including an electrically conductive material; and at least one electrically conductive connection electrically conductively connected to the semiconductor chip and the via, wherein the via is laterally spaced part from the semiconductor chip; the via includes a contact pin, the contact pin including an electrically conductive material; and the contact pin is laterally completely enclosed by the shaped body.

In at least one embodiment, the semiconductor component includes at least one optoelectronic semiconductor chip having a radiation exit side. The surface-mountable semiconductor component comprises a shaped body that covers side surfaces of the semiconductor chip directly and in a positively locking manner. The shaped body and the semiconductor chip do not overlap, as seen in a plan view of the radiation exit side.

Method for producing an optoelectronic semiconductor component, and optoelectronic semiconductor component

An optoelectronic semiconductor component and a method for making an optoelectronic semiconductor component are disclosed. In an embodiment the component includes a carrier including at least one conversion-medium body and a potting body, the potting body surrounding the conversion-medium body at least in places, as seen in plan view, electrical contact structures fitted at least indirectly to the carrier and a plurality of optoelectronic semiconductor chips fitted to a main face of the carrier, the optoelectronic semiconductor chips configured to generate radiation, wherein the conversion-medium body is shaped as a plate, wherein the semiconductor chips are directly mechanically connected to the conversion-medium body, and wherein the conversion-medium body is free of cutouts for the electrical contact structures and is not penetrated by the electrical contact structure.

Optoelectronic semiconductor component and method for producing said component

An optoelectronic semiconductor component includes an optoelectronic semiconductor chip having side areas, a surface at a top side of the semiconductor chip, and a surface at a bottom side of the semiconductor chip; a shaped body having a surface at a top side of the shaped body and a surface at an underside of the shaped body; at least one plated-through hole including an electrically conductive material; and an electrically conductive connection electrically conductively connected to the semiconductor chip and the plated-through hole, wherein the side areas of the optoelectronic semiconductor chip are covered by the shaped body, and the surface at the top side and/or the surface at the bottom side of the optoelectronic semiconductor chip are completely free of the shaped body.

The invention relates to an optoelectronic semiconductor component, which has a carrier element (), on which an optoelectronic semiconductor chip () having at least one active layer is arranged, wherein the active layer is designed to emit or receive light during operation and wherein the semiconductor chip () is covered with a protective layer () that contains poly-para-xylenes.

An optoelectronic lighting device includes a lighting module with an optoelectronic semiconductor chip. A connection carrier has a first main surface and a second main surface facing away from the first main surface. The lighting module is arranged on the first main surface of the connection carrier, and the connection carrier adheres to a heat sink on account of a magnetic attraction.

Optoelectronic lighting device and method for producing an optoelectronic lighting device

An opto-electronic component has a carrier element () with a connection region (). Arranged on the carrier element () is a semiconductor chip (). A contact region () is mounted on the surface () of the semiconductor chip () remote from the carrier element (). The connection region () is electrically conductively connected to the contact region () by way of an unsupported conductive structure (). A method for manufacturing an opto-electronic component is described.

Optoelectronic component and method for producing an opto-electronic component

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Nittendorf, Germany

Walter Wegleiter