3m Innovative Properties Company

Hanergy Hi-tech Power (hk) Limited

Global Solar Energy, Inc.

Walter Stoss

Urs Schoop

Clark Ivan Bright

Scot P Albright

Darren Tibor Verebelyi

Christopher Stewart Lyons

Peter D Condo

Terence D Spawn

Scott Wiedeman

Jeffrey S Britt

Joseph M Pieper

Janet R Kirkman

Edward John Anderson

Steven R Vanhoose

Michael L Podkin

Kent T Engle

Nguyet Nguyen

A conductive film is formed on a flexible polymer support by applying a seed layer comprising gallium oxide, indium oxide, magnesium oxide, zinc oxide or mixture (including mixed oxides) thereof to the flexible polymer support, and applying an extensible, visible light-transmissive metal layer over the seed layer. The seed layer oxide desirably promotes deposition of the subsequently-applied metal layer in a more uniform or more dense fashion, or promotes earlier formation (viz., at a thinner applied thickness) of a continuous metal layer. The resulting films have high visible light transmittance and low electrical resistance.

Nucleation layer for thin film metal layer formation

Mounting systems for PV modules and assemblies of modules, including apparatus and methods of use. The disclosed systems generally involve mounting a flexible photovoltaic module in a slight arch, bending it with a large radius around one axis of the module.

Mounting structures for photovoltaic cells

A system for processing vapor. The system includes a vapor source for producing a vapor and an outlet conduit coupled to the vapor source for carrying the vapor from the vapor source. Downstream of the vapor source the outlet conduit separates into a vapor bypass conduit and a vapor feed conduit. The system further includes a first vapor control valve disposed in the bypass conduit, a second vapor control valve disposed in the feed conduit, a first vacuum chamber connected to the bypass conduit, and a second vacuum chamber connected to the feed conduit.

Systems and methods for processing vapor

Improved methods and apparatus for forming thin-film layers of chalcogenide on a substrate web. Solutions containing the reactants for the chalcogenide layer may be contained substantially to the front surface of the web, controlling the boundaries of the reaction and avoiding undesired deposition of chalcogenide upon the back side of the web.

Solution containment during buffer layer deposition

Solar control films containing a visible light-transmissive flexible support, a first nucleating oxide seed layer, a first metal layer, an organic spacing layer, a second nucleating oxide seed layer, a second metal layer and a polymeric protective layer. The thicknesses of the metal layers and spacing layer are such that the films are visible light-transmissive and infrared-reflective. The films have high visible light transmittance, high Reflected Energy and low Total Solar Heat Transmission.

Infrared reflecting films for solar control and other uses

Thin film photovoltaic cells and methods of manufacturing such cells that include one or more diffusion barrier layers configured to provide a relatively smooth growth surface for subsequent deposition of a p-type semiconductor layer. Diffusion barrier layers according to the present teachings may be amorphous, microcrystalline or nanocrystalline layers of materials including molybdenum, conductive oxides, conductive nitrides, conductive carbides, or mixtures thereof. In some cases a diffusion barrier layer may be configured to have surface roughness less than a predetermined threshold value.

Barrier and planarization layer for thin-film photovoltaic cell

Growing community of inventors

Tucson, AZ, United States of America

Walter Stoss