University of Hawai'i

Walter Snoeys

Sherwood I Parker

A structure for a detector with a high spatial resolution is characterized not only as integrating on the same chip both PIN diodes and readout circuitry for detecting the charge collected through the individual diodes, but places the junction and collection electrode on opposite ends of the PIN diode. This reduces the fields at the collection electrode, and allows the wells containing the readout circuitry, which should be located as close to the collection electrode as possible to minimize collection electrode capacitance, to be placed in a low field region. The bias voltage required on the wells can then be reduced, and the electrodes for collecting the generated charge can be made smaller.

Integrated vlsi radiation/particle detector with biased pin diodes

A VLSI radiation/particle detector includes detecting elements based on one or more PIN diodes which are biased for collecting the charge generated by incident radiation or ionizing particles, and readout circuitry integrated on the same chip for detecting the collected charge. The junction of the PIN diode and the well containing the readout circuitry are separated far from each other such that the bias voltage required on the well to direct most generated charge to the collection electrodes can be reduced, and these can be made smaller to improve the detector's spatial resolution.

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Stanford, CA, United States of America

Walter Snoeys