Infineon Technologies Austria Ag

Walter Slamnig

Thomas Krotscheck Ostermann

Clemens Roessler

Johanna Elisabeth Roessler

Norbert Rieser

Siegfried Schmid

A device for controlling trapped ions includes a substrate. An electrode structure is disposed on the substrate, the electrode structure including DC electrodes and RF electrodes of an ion trap configured to trap ions in a space above the substrate. A first device terminal is disposed on the substrate, the first device terminal being connected via a first electrode connection line to a specific DC electrode. Further, a second device terminal is disposed on the substrate, the second device terminal being connected via a second electrode connection line to the specific DC electrode.

Growing community of inventors

Latschach, Austria

Walter Slamnig