Fab-tech Incorporated

Ion Inject Technology LLC

Other

Milton Roy, LLC

Eon Labs, Inc.

Walter Riley Buchanan

Roman J Hamerski

Grant William Forsee

David Forsee

Christopher Daniel Hruska

Chris Hruska

Wayne A Smith

A system and method for formulating a medical treatment effluent by performing plasma reactions creating a plasma area in a gas adjacent to a liquid. An embodiment of the plasma reactor includes a housing with an internal reaction chamber, first and second inlet paths to the reaction chamber, and electrodes for producing an electric field. The system may optionally further include a pre-ionization electrode and pre-ionization electric field for pre-ionizing a feed gas prior to entry into a reaction chamber. The reactor uses plasma to ionize gas adjacent with the liquid. The ionized gas reacts with the liquid to form an effluent. Exemplary medical treatments include: immunization (immuno) therapy; wound treatment; cancer treatment; and disinfectant applications.

System and method for formulating medical treatment effluents

A system and method for performing plasma reactions creating a plasma area in a gas adjacent to a liquid. An embodiment of the plasma reactor includes a housing with an internal reaction chamber, first and second inlet paths to the reaction chamber, and electrodes for producing an electric field. The system may optionally further include a pre-ionization electrode and pre-ionization electric field for pre-ionizing a feed gas prior to entry into a reaction chamber. The reactor uses plasma to ionize gas adjacent with the liquid. The ionized gas reacts with the liquid to form an effluent. Exemplary uses of the plasma reactor include ionic injection, gas dissociation, liquid re-formation, and liquid dissociation. An alternative embodiment provides a system and method for infusion of gaseous particles into liquid by applying an electric field at power levels lower than the voltage required to form a plasma to gas adjacent to liquid.

Reactor for liquid and gas and method of use

A system and method for performing plasma reactions creating a plasma area in a gas adjacent to a liquid. An embodiment of the plasma reactor includes a housing with an internal reaction chamber, first and second inlet paths to the reaction chamber, and electrodes for producing an electric field. The system may optionally further include a pre-ionization electrode and pre-ionization electric field for pre-ionizing a feed gas prior to entry into a reaction chamber. The reactor uses plasma to ionize gas adjacent with the liquid. The ionized gas reacts with the liquid to form an effluent. Exemplary uses of the plasma reactor include ionic injection, gas dissociation, liquid re-formation, and liquid dissociation.

Plasma reactor for liquid and gas and method of use

Traditional plasma voltage generator circuits consist mainly of fly-back or pulse forming networks. These systems tend supply plasma generating pulses to plasma reactors at frequencies less than 30 kHz with most being less than 5 kHz. In addition these traditional plasma voltage generators are limited in the ability to adjust to dynamic reactor conditions, are energy inefficient and are limited in the amount of material ionized. An innovative drive system is presented herein that is energy efficient, can operate at frequencies below and well above 30 kHz, and can react to dynamic conditions in the plasma reactor allowing much greater flexibility and enhanced operating capabilities.

Quasi-resonant plasma voltage generator

A system for performing liquid treatment using ionized gas comprises a plasma membrane reactor. The plasma membrane reactor includes a gas zone, and ion membrane along with electrodes to create a plasma. The membrane allows ions to pass through and contact the liquid thereby treating the liquid.

Membrane plasma reactor

A system for performing treatment of a liquid by ionized gas comprises a laminar flow liquid gas plasma reactor. The plasma reactor includes electrodes, an upper and lower flow spreader, and a housing. The reactor uses gas to form a gas zone above the liquid where the gas is ionized directly above and in direct contact with the liquid. The ionized gas reacts with the liquid to form an effluent.

Plasma reactor for liquid and gas

A system for performing ozone water treatment comprises a voltage supply circuit and a plasma eductor reactor. The voltage supply circuit includes an H-bridge controller and driver, a transformer, and an output port. The H-bridge controller and driver are configured to switch the electrical polarity of a pair of terminals. A primary of the transformer is connected to the H-bridge driver and controller. A secondary of the transformer connects in parallel with a first capacitor and in series with an inductor and a second capacitor. The output port connects in parallel with the second capacitor. The plasma eductor reactor includes an electric field generator, a flow spreader, and a diffuser. The electric field generator includes a pair of electrodes that generate an electric field. The flow spreader supplies a stream of oxygen. The diffuser supplies a stream of water. The streams of water and oxygen pass through the electric field.

Impedance matching circuit

Methods, systems, and reactors for non-thermal plasma over liquid direct ion injection

Systems and methods for non-thermal plasma over liquid direct ion injection

A plasma reactor consisting of a plurality of elements placed between two or more plasma generating electrodes is presented. Said elements consisting of surfaces, conducting, and/or dielectric which allow for the dielectric isolation of the electrodes from each other and creating a plurality of dielectrically isolated spaces for plasma generation. This plasma reactor achieves a high surface area, with low capacitance allowing simplified construction and is suitable for high frequency operation.

Distributed dielectric barrier discharge reactor

The present invention provides a high voltage semiconductor device capable of withstanding excessive breakdown and clamping voltages. The device includes a high resistivity substrate, and an epitaxially grown, low resistivity layer having a stress-relieving dopant. During production, the low conductivity region has one surface that is etched before a high conductivity region is diffused into it or epitaxially deposited on it.

Apparatus and method for fabricating a high reverse voltage semiconductor device

A diode ( ), having first and second conductive layers ( ), a conductive pad ( ), and a distributed reverse surge guard ( ), provides increased protection from reverse current surges. The surge guard ( ) includes an outer loop ( ) of P -type surge guard material and an inner grid ( ) of linear sections ( ) which form a plurality of inner loops extending inside the outer loop ( ). The surge guard ( ) distributes any reverse current over the area of the conductive pad ( ) to provide increased protection from transient threats such as electrostatic discharge (ESD) and during electrical testing.

Distributed reverse surge guard

An improved Schottky device, having a low resistivity layer of semiconductor material, a high resistivity layer of semiconductor material and a buried dopant region positioned in the high resistivity layer utilized to reduce reverse leakage current. The low resistivity layer can be an N material while the high resistivity layer can be an N layer. The buried dopant region can be of P material, thus forming a PN junction with an associated charge depletion zone in the N layer and an associated low reverse leakage current. The location of the P material allows for a full Schottky barrier between the N material and a barrier metal to be maintained, thus the device experiences a low forward voltage drop.

Method of manufacturing a schottky device

An electrical device such as a diode usable in high voltage applications wherein the electrical device is fabricated from a method which yields a plurality of high voltage electrical devices, the present method including providing a substrate of a semiconductor material having a predetermined substrate conductive type, the substrate being typically formed from a monocrystalline growth method, forming a second epitaxial layer contiguous with the upper surface of the substrate, the epitaxial layer having a predetermined second layer conductive type, and thereafter forming a top layer of dopant material in a predetermined pattern upon the upper surface of the second epitaxial layer. This predetermined pattern of dopant material typically takes the form of an array of patches which can be achieved through either a masking and etching process, or through a screen printing process. Once the predetermined pattern of dopant material is formed or otherwise deposited upon the upper surface of the epitaxial layer, the substrate, epitaxial and top layers are heated to form a diffusion region in the epitaxial layer, this diffusion region having a specific correlation to the predetermined pattern of dopant material. Once heated, the remaining top layer of dopant material is removed and the resultant substrate and diffused epitaxial layer is divided so as to form a plurality of separate electrical devices. Each patch of dopant material corresponds to the middle portion of an individual electrical device devisable from the resultant substrate and defused based and the diffusion region achieved by the heating process will be deepest substantially towards the middle portion of each respective electrical device and will be comparatively shallower at the edges of each such electrical device.

Method for making high voltage device

An electrical device such as a diode usable in high voltage applications wherein the electrical device is fabricated from a method which yields a plurality of high voltage electrical devices, the present method including providing a substrate of a semiconductor material having a predetermined substrate conductive type, the substrate being typically formed from a monocrystalline growth method, forming a second epitaxial layer contiguous with the upper surface of the substrate, the epitaxial layer having a predetermined second layer conductive type, and thereafter forming a top layer of dopant, material in a predetermined pattern upon the upper surface of the second epitaxial layer. This predetermined pattern of dopant material typically takes the form of an array of patches which can be achieved through either a masking and etching process, or through a screen printing process. Once the predetermined pattern of dopant material is formed or otherwise deposited upon the upper surface of the epitaxial layer, the substrate, epitaxial and top layers are heated to form a diffusion region in the epitaxial layer, this diffusion region having a specific correlation to the predetermined pattern of dopant material. Once heated, the remaining top layer of dopant material is removed and the resultant substrate and diffused epitaxial layer is divided so as to form a plurality of separate electrical devices. Each patch of dopant material corresponds to the middle portion of an individual electrical device devisable from the resultant substrate and defused based and the diffusion region achieved by the heating process will be deepest substantially towards the middle portion of each respective electrical device and will be comparatively shallower at the edges of each such electrical device.

Growing community of inventors

Olathe, KS, United States of America

Walter Riley Buchanan