Infineon Technologies Austria Ag

Infineon Technologies Ag

Walter Rieger

Franz Hirler

Oliver Haeberlen

Joachim Krumrey

Martin Poelzl

Markus Zundel

Martin Pölzl

Frank Dieter Pfirsch

Martin Henning Vielemeyer

Ralf Henninger

Thorsten Meyer

Wolfgang Klein

Rudolf Zelsacher

Oliver Häberlen

Manfred Kotek

Lutz Goergens

Gerhard Nöbauer

Oliver Blank

Maximilian Roesch

Uli Hiller

Johannes Schoiswohl

Ralf Siemieniec

Andrew Wood

Jan Ropohl

Erwin Bacher

Milko Paolucci

Mathias Born

Jenoe Tihanyi

Martin Feldtkeller

Hans Weber

Wolfgang Werner

Gilberto Curatola

Christoph Kadow

Michael Treu

Anthony Sanders

Paul Ganitzer

Joerg Ortner

Gianmauro Pozzovivo

Uwe Schmalzbauer

Heimo Hofer

Andreas Behrendt

Martin PöIzl

Helmut Angerer

Oliver Haeberlein

Sonja Krumrey, Legal Representative

Wolfgang Friesacher

Martin P&ouml;lzl

A semiconductor device is described. In one embodiment, the device includes a Group-III nitride channel layer and a Group-III nitride barrier layer on the Group-III nitride channel layer, wherein the Group-III nitride barrier layer includes a first portion and a second portion, the first portion having a thickness less than the second portion. A p-doped Group-III nitride gate layer section is arranged at least on the first portion of the Group-III nitride barrier layer and a gate contact formed on the p-doped Group-III nitride gate layer.

Nitride semiconductor device

A semiconductor device includes a plurality of first field-effect structures each including a polysilicon gate arranged on and in contact with a first gate dielectric, and a plurality of second field-effect structures each including a metal gate arranged on and in contact with a second gate dielectric. The plurality of first field-effect structures and the plurality of second field-effect structures form part of a power semiconductor device.

Semiconductor device having field-effect structures with different gate materials

A method of manufacturing a semiconductor die includes: forming a power HEMT (high-electron-mobility transistor) in a III-nitride semiconductor substrate, the power HEMT having a gate, a source and a drain; monolithically integrating a first gate driver HEMT with the power HEMT in the III-nitride semiconductor substrate, the first gate driver HEMT having a gate, a source and a drain and logically forming part of a driver; and electrically connecting the first gate driver HEMT to the gate of the power HEMT so that the first gate driver HEMT is operable to turn the power HEMT off or on responsive to an externally-generated control signal received from the driver or other device.

Method of manufacturing a semiconductor die

A semiconductor device includes a source metallization, a source region of a first conductivity type in contact with the source metallization, a body region of a second conductivity type which is adjacent to the source region. The semiconductor device further includes a first field-effect structure including a first insulated gate electrode and a second field-effect structure including a second insulated gate electrode which is electrically connected to the source metallization. The capacitance per unit area between the second insulated gate electrode and the body region is larger than the capacitance per unit area between the first insulated gate electrode and the body region.

Power MOSFET semiconductor

A semiconductor die includes a semiconductor substrate having a first region and a second region isolated from the first region. A power transistor disposed in the first region of the semiconductor substrate has a gate, a source and a drain. A gate driver transistor disposed in the second region of the semiconductor substrate has a gate, a source and a drain. The gate driver transistor is electrically connected to the gate of the power transistor and operable to turn the power transistor off or on responsive to an externally-generated control signal applied to the gate of the gate driver transistor. A first contact pad is electrically connected to the source of the power transistor, and a second contact pad is electrically connected to the drain of the power transistor. A third contact pad is electrically connected to the gate of the gate driver transistor for receiving the externally-generated control signal.

Power transistor with at least partially integrated driver stage

A semiconductor die includes a III-nitride semiconductor substrate, a power HEMT (high-electron-mobility transistor) disposed in the III-nitride semiconductor substrate, and a first gate driver HEMT monolithically integrated with the power HEMT in the III-nitride semiconductor substrate. The power HEMT and the first gate driver HEMT each have a gate, a source and a drain. The first gate driver HEMT logically forms part of a driver, and is electrically connected to the gate of the power HEMT. The first gate driver HEMT is operable to turn the power HEMT off or on responsive to an externally-generated control signal received from the driver or other device. Additional embodiments of semiconductor dies and methods of manufacturing are also described.

Gate voltage control for III-nitride transistors

A semiconductor device includes a semiconductor substrate, at least a first field-effect structure integrated in the semiconductor substrate and at least a second field-effect structure integrated in the semiconductor substrate. The first field-effect structure includes a first gate electrode comprised of a polycrystalline semiconductor material. The second field-effect structure includes a second gate electrode comprised of one of a metal, a metal alloy, a metal layer stack, a metal alloy layer stack and any combination thereof.

Semiconductor device having field-effect structures with different gate materials, and method for manufacturing thereof

A semiconductor device includes a semiconductor substrate, a doped zone, a polysilicon layer and an elongate plug structure. The doped zone is within the semiconductor substrate. The polysilicon layer is disposed in a trench electrically isolated from the semiconductor substrate by an insulating layer. The elongate plug structure extends in a lateral direction in or above the semiconductor substrate. The elongate plug structure provides electrical connection between the doped zone and the polysilicon layer.

Semiconductor device

Semiconductor device including a metal carrier substrate. Above the carrier substrate a first semiconductor layer of AlGaInN (x1+y1+z1=1, x1&#x2267;0, y1&#x2267;0, z1&#x2267;0) is formed. A second semiconductor layer of AlGaInN (x2+y2+z2=1, x2&#x3e;x1, y2&#x2267;0, z2&#x2267;0) is arranged on the first semiconductor layer and a gate region is arranged on the second semiconductor layer. The semiconductor device furthermore includes a source region and a drain region, wherein one of these regions is electrically coupled to the metal carrier substrate and includes a conductive region extending through the first semiconductor layer.

Semiconductor device with metal carrier and manufacturing method

An electronic circuit includes a transistor arrangement with a plurality of transistor devices, each including a control node and a load path between a first load node and a second load node, and having the load paths connected in parallel. The electronic circuit further includes a drive circuit coupled to the control node of each of the plurality of transistor devices, and configured to receive an input signal. Each of the plurality of transistor devices includes a two-dimensional electron gas (2DEG) in the load path, and a field plate adjacent the 2DEG. The drive circuit is configured to receive a load signal that represents at least one load parameter of the transistor arrangement and is configured to one of activate and deactivate at least one of the plurality of transistor devices based on the load signal.

Electronic circuit and method for operating a transistor arrangement

A transistor device includes at least one first type transistor cell including a drift region, a source region, a body region arranged between the source region and the drift region, a drain region, a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric, and a field electrode adjacent the drift region and dielectrically insulated from the drift region by a field electrode dielectric. A gate terminal is coupled to the gate electrode, a source terminal is coupled to the source region, and a control terminal is configured to receive a control signal. A variable resistor is connected between the field electrode and the gate terminal or the source terminal. The variable resistor includes a variable resistance configured to be adjusted by the control signal received at the control terminal.

Electronic circuit having adjustable transistor device

One aspect relates to a semiconductor component with a semiconductor body, a first main contact pad, a second main contact pad, a normally-on first transistor monolithically integrated in the semiconductor body and a normally-off second transistor monolithically integrated in the semiconductor body. The first transistor is a high electron mobility transistor having a first gate electrode and a first load path controllable via a first gate electrode, and the second transistor has a second gate electrode and a second load path controllable via the second gate electrode. The first load path and the second load path are electrically connected in series between the first main contact pad and the second main contact pad.

Semiconductor component with transistor

A field plate trench transistor having a semiconductor body. In one embodiment the semiconductor has a trench structure and an electrode structure embedded in the trench structure. The electrode structure being electrically insulated from the semiconductor body by an insulation structure and having a gate electrode structure and a field electrode structure. The field plate trench transistor has a voltage divider configured such that the field electrode structure is set to a potential lying between source and drain potentials.

Field plate trench transistor and method for producing it

Growing community of inventors

Arnoldstein, Austria

Walter Rieger