US Government As Represented by the Secretary of the Army

Axsun Technologies, Inc.

Walter R Buchwald

Dale C Flanders

Walid A Atia

Jeffrey A Korn

Pankaj B Shah

Randal A Murdza

Minh Van Le

Xiaomei Wang

Robert L Payer

Eric E Fitch

Vladimir V Mitin

L James Newman, Iii

A detector system for a fiber optic component is insensitive to stray light. Specifically, the invention comprises a detector chip, which converts received light into an electric signal. A baffle substrate is positioned over the detector chip. This baffle substrate has a transmission port through which an optical signal is transmitted to the detector chip. As a result, light that is not directed to be transmitted through the port is blocked by the baffle substrate. In this way, it rejects stray light that may be present in the hermetic package. A detector substrate is provided on which the detector chip is mounted. This detector substrate preferably comprises electrical traces to which the detector chip is electrically connected. The detector substrate can further comprise bond pads for wire bonding to make electrical connections to the electrical traces.

Stray light insensitive detector system and amplifier

A high speed, compact and reliable semiconductor device for spatially switching light in optical switching networks, optical computers and optical interconnection networks is provided. The semiconductor device for spatially switching light comprises stacked P-anode, inner n-base, inner p-base and cathode layers, with an anode cathode on the P-anode layer defining a ridge. A low reverse bias is provided by a biasing means connected to a gate electrode disposed on a ledge of one base layer. A light emission region on the gate electrode side emits light, and a current flow induces a transversely flowing, narrow, light emitting channel that can be spatially shifted by switching the single gate electrode's bias. A high reverse bias also provides a spatially shifted light emission region in another part of the device's face. A cathode electrode is disposed on a portion of the bottom surface of the N-cathode layer, below the gate electrode and most of the cathode region below the ridge is not covered by the cathode electrode. Other embodiments include related variations, a semiconductor device for spatially switching light in a laser and a semiconductor device for spatially switching light in a selective amplifier for optical switching networks, optical computers, optical interconnection systems and related uses. The location of the cathode electrode is important because it induces the horizontal current flow in the cathode region, that is required for the existence of the transversely flowing, narrow, light emitting channel.

High speed, spatially switching light

Growing community of inventors

Hampstead, NH, United States of America

Walter R Buchwald