Siemens Aktiengesellschaft

Walter Neumueller

Josef Winnerl

A method for producing a via hole to a doped region in a semiconductor device, including the steps of: producing the doped region in a substrate such that the doped region is limited by insulating regions at least at a surface of the substrate; depositing an undoped silicon layer surface-wide on the substrate; producing a doped region in the silicon layer that overlaps a region for the via hole; selectively removing the undoped silicon of the silicon layer relative to the doped region of the silicon layer; producing an insulating layer surface-wide; and forming the via hole in the insulating layer by selective anisotropic etching relative to the doped region of the silicon layer.

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Munich, Germany

Walter Neumueller