Microchip Technology Inc.

Silicon Storage Technology, Inc.

Walter Lundy

Justin Sato

Bomy A Chen

Greg Stom

Robert P Ma

Brian Dee Hennes

A method of bonding a first substrate to a second substrate, wherein the first substrate includes first electrical contacts on a top surface of the first substrate, and wherein the second substrate includes second electrical contacts on a bottom surface of the second substrate. The method includes forming a block of polyimide on the top surface of the first substrate, wherein the block of polyimide has a rounded upper corner, and vertically moving the top surface of the first substrate and the bottom surface of the second substrate toward each other until the first electrical contacts abut the second electrical contacts, wherein during the moving, the second substrate makes contact with the rounded upper corner of the polyimide causing the first and second substrates to move laterally relative to each other.

Sacrificial alignment ring and self-soldering vias for wafer bonding

A method for manufacturing a semiconductor die may have the steps of:&#x2014;Providing a semiconductor substrate;&#x2014;Processing the substrate to a point where shallow trench isolation (STI) can be formed;&#x2014;Depositing at least one underlayer having a predefined thickness on the wafer;&#x2014;Depositing a masking layer on top of the underlayer;&#x2014;Shaping the masking layer to have areas of predefined depths;&#x2014;Applying a photolithograthy process to expose all the areas where the trenches are to be formed; and&#x2014;Etching the wafer to form silicon trenches wherein the depth of a trench depends on the location with respect to the masking layer area.

Method for manufacturing a semiconductor die with multiple depth shallow trench isolation

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Gilbert, AZ, United States of America

Walter Lundy