Heraeus Quarzglas Gmbh & Co Kg

Heraeus Shin-etsu America, Inc.

Shin-etsu Quartz Products Co., Ltd.

Solarworld Innovations Gmbh

Leibniz-institut Fur Photonische Technologien E.v.

Walter Lehmann

Thomas Kayser

Michael Hünermann

Andreas Langner

Martin Trommer

Matthias Otter

Nils Christian Nielsen

Boris Gromann

Nigel Robert Whippey

Abdoul-Gafar Kpebane

Jan Vydra

Stephan Thomas

Klaus Becker

Michael Huenermann

Stefan Hengster

Achim Hofmann

Matthias Söhn

Martin Arndt

Gerhard Schötz

Martin Thürer

Waltraud Werdecker

Christian Schenk

Katsuhiko Kemmochi

Gerrit Scheich

Bodo Kuehn

Bernhard Freudenberg

Kay Schuster

Gerhard Schoetz

Clemens Schmitt

Hilmar Laudahn

Mario Such

Rainer Koeppler

Stephan Grimm

Mirko Wittrin

Stefan Weidlich

Robert Joseph Coolich

Klaus-Uwe Badeke

Kaspars Dadzis

Gerd Fischer

Ulrich Kirst

Jaqueline Plass

Markus Wilde

Nils-Christian Nielsen

Sandra Nadolny

Franziska Wolny

Hardy Baierl

Jacqueline Plass

Dörte Schönfeld

Jan Dellith

Alexander Laaz

Jürgen Schäfer

Martin Hengstermann

Gerhard SCHÖTZ

Michael HÜNERMANN

A method for homogenizing glass includes the method: providing a cylindrical blank composed of the glass having a cylindrical outer surface that extends along a longitudinal axis of the blank between a first end face and a second end face, forming a shear zone in the blank by softening a longitudinal section of the blank and subjecting it to a thermal-mechanical intermixing treatment, and displacing the shear zone along the longitudinal axis of the blank. The displacement of the shear zone along the longitudinal axis of the blank is superimposed by a simultaneous oscillating motion of the shear zone along the longitudinal axis of the blank. The first end of the blank is rotated at a first rotational speed and the second end of the blank is rotated at a second rotational speed. An oscillating motion of the shear zone is generated by periodically varying the first and/or second rotational speed.

Method for homogenizing glass

Described is a process for the production of synthetic fused silica in which the deposition surface is located for a period of at least 50% of the build-up time of the soot body at a burner distance in which the horizontally integrated luminous intensity of the flame of the burner used in the targetless state is still at least ⅔ of the maximum horizontally integrated luminous intensity of the flame.

Process for the preparation of synthetic quartz glass

Described is a method of producing synthetic fused silica in which the synthetic flame used in the method has a ratio of the Full Width at Half Maximum (FWHM) vertical luminous intensity to the Full Width at Half Maximum (FWHM) horizontal luminous intensity greater than 10 in a targetless state, the luminous intensities being measured in candela/mm.

One aspect relates to a process for the preparation of a quartz glass body, including providing a silicon dioxide granulate, wherein the silicon dioxide granulate was made from pyrogenic silicon dioxide powder and the silicon dioxide granulate has a BET surface area in a range from 20 to 40 m/g, making a glass melt out of silicon dioxide granulate in an oven and making a quartz glass body out of at least part of the glass melt. The oven has at least a first and a further chamber connected to one another via a passage. The temperature in the first chamber is lower than the temperature in the further chambers. On aspect relates to a quartz glass body which is obtainable by this process. One aspect relates to a light guide, an illuminant and a formed body, which are each obtainable by further processing of the quartz glass body.

Preparation of a quartz glass body in a multi-chamber oven

In known methods for producing a glass component, a void-containing intermediate product containing doped or non-doped SiOis inserted into a sheath tube composed of glass, which has a longitudinal axis and an inner bore, and is thermally treated therein. In order to subject the intermediate product to a thermal and/or reactive treatment that is reproducible and uniform in its effect from this starting point, it is proposed in one embodiment that into the sheath tube's inner bore a first gas-permeable gas diffuser is inserted which is displaceable along the sheath tube's longitudinal axis and is pressed against the intermediate product during the thermal treatment.

Method and apparatus for producing a glass component

One aspect relates to a process for the preparation of a quartz glass body including, providing a silicon dioxide granulate obtainable from a silicon dioxide powder, wherein the silicon dioxide granulate has a larger particle size than the silicon dioxide powder, making a 5 glass melt out of silicon dioxide granulate and making a quartz glass body out of at least part of the glass melt. The melting crucible has at least one inlet and at least one outlet. A least part of the glass melt is removed via the melting crucible outlet. One aspect further relates to a quartz glass body which is obtainable by this process. One aspect further relates to a light guide, an illuminant and a formed body, which are each obtainable by further processing 10 of the quartz glass body.

Preparation of quartz glass bodies from silicon dioxide granulate

A method for homogenizing glass includes the method: providing a cylindrical blank composed of the glass having a cylindrical outer surface that extends along a longitudinal axis of the blank between a first end face and a second end face, forming a shear zone in the blank by softening a longitudinal section of the blank and subjecting it to a thermal-mechanical intermixing treatment, and displacing the shear zone along the longitudinal axis of the blank. To enable a radial mixing within the shear zone in addition to the tangential mixing with the lowest possible time and energy input, starting from this method, cylindrical sections of the blank are adjacent to the shear zone on both sides, the first cylindrical section having a first central axis and the second cylindrical section having a second central axis, the first central axis and the second central axis being temporarily non-coaxial with each other.

A known method for homogenizing glass includes the following steps: providing a cylindrical blank composed of the glass, having a cylindrical outer surface which extends between a first end face and a second end face, forming a shear zone in the blank by softening a longitudinal section of the blank and subjecting it to a thermal-mechanical intermixing treatment, and moving the shear zone along the longitudinal axis of the blank. To reduce the risk of cracks and fractures during homogenizing, it is proposed that a thermal radiation dissipator is used that at least partially surrounds the shear zone, the lateral dimension of which in the direction of the longitudinal axis of the blank is greater than the shear zone and smaller than the length of the blank, the thermal radiation dissipator being moved synchronously with the shear zone along the longitudinal axis of the blank.

Method and device for homogenizing glass

The invention relates to a process for preparing a quartz glass body comprising the process steps i.) Providing a silicon dioxide granulate, ii.) Making a glass melt from the silicon dioxide granulate in a melting crucible, and iii.) Making a quartz glass body from at least a part of the glass melt, wherein the melting crucible is comprised in an oven and is made of at least one material comprising tungsten or molybdenum or a combination thereof. The invention further relates to a quartz glass body which can be obtained by this process. Further, the invention relates to a light guide, an illuminant and a formed body, each of which can be obtained by processing the quartz glass body further.

Preparation of a quartz glass body in a melting crucible of refractory metal

A method for producing a component with portions of a rare earth metal-doped quartz glass, an intermediate product containing voids and consisting of a SiOraw material doped with rare earth metal is introduced into a sinter mold the interior of which is bordered by a carbonaceous mold wall, and is melted therein into the component by gas pressure sintering at a maximum temperature above 1500&#xb0; C. A shield is arranged between the mold wall and the intermediate product. In order to indicate a modified gas pressure sintering method that ensures the production of rare earth metal-doped quartz glass with reproducible properties, a bulk material of amorphous SiOparticles with a layer thickness of at least 2 mm is used as the shield, the softening temperature thereof being at least 20&#xb0; C. higher than the softening temperature of the doped SiOraw material, and the bulk material being gas-permeable at the beginning of the melting of the intermediate product, and the bulk material sintering during melting into an outer layer that is gas-tight to a pressure gas.

Method for producing a component of rare earth metal-doped quartz glass

One aspect relates to a process for the preparation of a quartz glass body, including providing a silicon dioxide granulate, wherein the silicon dioxide granulate was made from pyrogenic silicon dioxide powder and the silicon dioxide granulate has a BET surface area in a range from 20 to 40 m/g, making a glass melt out of silicon dioxide granulate in an oven and making a quartz glass body out of at least part of the glass melt. The oven has at least a first and a further chamber connected to one another via a passage. The temperature in the first chamber is lower than the temperature in the further chambers. One aspect relates to a quartz glass body which is obtainable by this process. One aspect relates to a light guide, an illuminant and a formed body, which are each obtainable by further processing of the quartz glass body.

The invention relates to a process for the preparation of a quartz glass grain comprising the process steps i.) Providing a silicon dioxide granulate from a pyrogenically produced silicon dioxide powder, ii.) Making a glass melt out of silicon dioxide granulate, iii.) Making a quartz glass body out of at least part of the glass melt and iv.) Reducing the size of the quartz glass body to obtain the quartz glass grain. The invention further relates to a quartz glass grain which is obtainable by this process. The invention further relates to opaque quartz glass bodies, which are obtainable by further processing of the quartz glass grain.

Preparation of a synthetic quartz glass grain

A method for producing rare earth metal-doped quartz glass includes the steps of (a) providing a blank of the rare earth metal-doped quartz glass, and (b) homogenizing the blank by softening the blank zone by zone in a heating zone and by twisting the softened zone along a rotation axis. Some rare earth metals, however, show a discoloration of the quartz glass, which hints at an unforeseeable and undesired change in the chemical composition or possibly at an inhomogeneous distribution of the dopants. To avoid this drawback and to provide a modified method which ensures the production of rare earth metal-doped quartz glass with reproducible properties, during homogenization according to method step (b), the blank is softened under the action of an oxidizingly acting or a neutral plasma.

Rare earth metal-doped quartz glass and method for producing the same

In a known method for pulling a semiconductor single crystal according to the Czochralski method, a semiconductor melt is produced in a silica glass crucible and the semiconductor single crystal is pulled from said melt. The inner wall of the silica glass crucible and the exposed melt surface are in contact with one another and with a respective melt atmosphere in the region of a contact zone running radially around the crucible inner wall, and primary oscillations of the melt are triggered in said contact zone. On this basis, in order to provide a method characterized by reduced melt vibrations and in particular by a simple, short accretion process, according to the invention primary oscillations are triggered which differ from one another in their frequency.

Pulling a semiconductor single crystal according to the Czochralski method and silica glass crucible suitable therefor

Pulling a semiconductor single crystal according to the Czochralski method

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Leipzig, Germany

Walter Lehmann