Koninklijke Philips Corporation N.v.

U.S. Philips Corporation

Walter Jan August De Coster

Alain Inard

Meindert Martin Lunenborg

Franck Arnaud

Dominique Cecile Zulian

Jean Claude Oberlin

Didier Levy

The formation of the isolating region includes ion implantation in the voluminal part, followed by annealing of said implanted voluminal part ( ) of the substrate ( ).

Process for forming shallow isolating regions in an integrated circuit and an integrated circuit thus formed

The invention relates to a method of forming an insulating zone ( ) around an active zone ( ) in a semiconductor substrate, which method includes the following steps: forming a groove around an active zone ( ) in the substrate; and filling the groove with a first material so as to form around the active zone an insulating zone ( ) which projects from the surface of the substrate and forms a vertical protrusion at its periphery; and blunting the angle of the protrusion of the insulating zone at the periphery at the active zone. The invention further relates to a semiconductor device formed using said method.

Method of forming an insulating zone

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St. Nazaire les Eymes, France

Walter Jan August De Coster