Siemens Aktiengesellschaft

Walter Heywang

Peter Kleinschmidt

Peter Baues

Max Guntersdorfer

An arrangement for coupling a laser diode and a monomode light waveguide, wherein a fine adjustment is particularly simple. The laser diode is a gain-guided diode having an end face coacting with an end face of the optical waveguide to form a coupling location and the arrangement includes a feedback arrangement for conducting a part of the light coupled from the laser diode into the light waveguide back through the waveguide and back into the laser diode. The feedback means comprises either one or more metallized rings having a width of a few light wavelengths being applied on a cylindrical surface of the monomode glass fiber forming the monomode light waveguide at a distance of a few micrometers from the coupling location, one or more notches in the outer surface of the fiber or combination of rings and notches.

Arrangement for coupling a laser diode and a monomode light waveguide

An electro-optical modulator has a monomode light waveguide modulator for which a pressure-sensitive signal generator is provided as a signal source for the purpose of modulating a light power signal supplied to the monomode light waveguide modulator over an input light waveguide, the electrical output of the signal generator being either directly or indirectly connected to an electrical input of the monomode light waveguide modulator. The arrangement serves for the transmission of signals representing pressure values, for example, acoustic pressure values, over an optical transmission system, and inasmuch as the electrical signals are generated by the pressure-sensitive signal generator, no external supply devices whatsoever are required at the modulator for the electrical energy.

Electro-optical modulator having a monomode light waveguide modulator

An arrangement for coupling a light waveguide, such as a monomode glass fiber to a laser diode and a method of forming the coupling characterized by the laser diode being an integrated part of a semi-conductor chip having a mirrored step projecting out of a seating surface for the monomode glass fiber. The mirrored step defines an end face of the diode from which the laser beam emerges and the seating surface extends parallel to the laser active layer of the diode and at such an interval from the layer that the light entry face of the one end of the waveguide laying flat on the seating surface lies at the same height as the exit point of the beam. The method includes securing the fiber forming the waveguide on the seating surface, and then applying an external magnetic field to the diode to displace and pivot the beam in the laser active layer to adjust the beam relative to the fiber.

Arrangement for coupling a laser diode to a monomode light waveguide and

Burglar alarm apparatus includes an ultrasonic transmitter and an electromagnetic radiation transmitter whose signals are Doppler frequency shifted by an object moving through the radiation fields, the signals being received by respective demodulating receivers which provide respective electrical signals corresponding to the Doppler frequency. Frequency conversion apparatus is connected to one of the receivers to convert the output frequency thereof by a predetermined ratio to normalize or equalize the frequencies and a signal comparison circuit is provided to produce a signal in response to a ratio of the Doppler shifted signals within a predetermined tolerance range.

Burglar alarm device

A germanium body containing impurities therein, such as B or Al is provided with a layer of a gettering material such as pure Si or SiO.sub.2, along at least one surface of the body, a melt zone is generated about the so-coated body and passed a number of times from one end of the body to the other whereby the gettering material binds the impurities within the germanium body and complex-impurity compounds accumulate at the respective ends of the body. After a desired degree of purity is achieved, the melt zone is deenergized and the impurity-containing ends are severed from the remaining body portion and any excess gettering material is removed.

Method of purifying germanium bodies

A semiconductor component with electric contacts is formed which includes a semiconductor body having metal contact layers formed in ohmic contact with at least two side surfaces thereof. In the process of making the component, a layer sequence is made including two layers formed of thermoplastic material and an intermediate layer of conductive material sandwiched between the two thermoplastic layers. In the process the temperature of the semiconductor body is raised to soften the thermoplastic material and the semiconductor body with its metal contacts is pressed through one of the thermoplastic layers, through the intermediate conductive layer to rupture the same and divide it into two parts and partially into the other thermoplastic layer. The intermediate layer is now composed of two parts, each part being conductively in contact with one of the metal contacts on the side surfaces of the semiconductor body. By forcing the semiconductor body and the leads through one of the thermoplastic layers into a desired position in the other thermoplastic layer, the first thermoplastic layer referred to, when cooled, partially extends upwardly against the respective faces of the semiconductor body to firmly grip these parts in place against the other thermoplastic layer. Furthermore, the metal contacts on the semiconductor body become fused to the two parts respectively of the intermediate conductive layer. Lead wires to the intermediate conductive parts are provided by pressing them through the first mentioned thermoplastic layer into contact with the intermediate conductive parts and fused therewith.

Process for making a semiconductor component with electrical contacts

A multi-layer element consisting of piezoelectric ceramic laminations possesses partially overlapping metal layers which are electrically connected to one another. Adjacent metal layers can each be connected to different poles of a voltage source, the laminations within the overlap zone of the metal layers being polarized in the thickness direction of the ceramic layers in such a manner that the polarization directions of adjacent laminations are opposite one another. All of the laminations of the multi-layer element exhibit a polarization outboard of the overlap zone in which the polarization is in the same direction.

Multi-layer element consisting of piezoelectric ceramic laminations and

A device for the transmission of information pertaining to handwriting with a piece of equipment which records the x and y-coordinates of the location of the writing pen. The device transmits the coordinates of the writing information after a suitable delay and transmits the coordinates of the commencement point of a new item of writing without delay. In this way the output receives the coordinate information of the commencement point at a time prior to the receipt of information pertaining to the writing itself, thus permitting a lower speed printing device than would be required if the output printer received the new coordinates of a handwritten item substantially simultaneously with the commencement of the coordinate information of the writing.

System for the formulation and transmission of coordinate information to

An electroluminescent semiconductor diode having a homogeneous monocrystalline semiconductor substrate providing a first zone on which an epitaxial layer has been formed providing a second zone. This second zone has a forbidden-band-width which changes steadily with increasing distance from the first zone. This second zone possesses a junction between a sub-zone having the properties of a 'direct semiconductor' and a sub-zone having the properties of a so-called 'indirect semiconductor' which lies parallel to the boundary between the first zone and the second zone and also parallel to the pn-junction of the diode. The pn-junction of the diode is located in the second zone and particularly in the sub-zone have the properties of an 'indirect semiconductor' but at such a short distance from the junction of the two sub-zones that the major part of the charge carriers injected from the pn-junction in the direction towards the sub-zone having the properties of a direct semiconductor pass to this latter sub-zone.

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Neukeferloh, Germany

Walter Heywang