Infineon Technologies Ag

Siemens Aktiengesellschaft

Other

Symetrix Corporation

Infineon Technologies Richmond, LP

Walter Hartner

G&uuml;nther Schindler

Maciej Wojnowski

Volker Weinrich

Frank S Hintermaier

Gunther Schindler

Rainer Bruchhaus

Ernst Seler

Carlos Mazure-Espejo

Andreas Peter Meiser

Dietrich Bonart

Hermann Gruber

Josef Boeck

Thomas Gross

Matthias Kr&ouml;nke

Nicolas Nagel

Gerhard Enders

Thomas Mikolajick

Gottfried Beer

Narayan Solayappan

Vikram Joshi

Bernhard Rieder

Igor Kasko

Martin Richard Niessner

Francesca Arcioni

Michael R&ouml;hner

Thorsten Meyer

Manfred Engelhardt

Christian Geissler

Zvonimir Gabric

Gerhard Beitel

Ulrich Wachter

Guenther Schindler

Ottmar Geitner

Claus Waechter

Matthias Krönke

Marcus Kastner

Tuncay Erdoel

Günther Schindler

Gerhard Haubner

Mattias Ahlstedt

Dirk Hammerschmidt

Michael Bauer

Hermann Wendt

Rudolf Lachner

Christine Dehm

Klaus Pressel

Thomas Peter Haneder

Gary F Derbenwick

Christoph Wagner

Joachim Hoepfner

Wolfgang Hoenlein

Helmut Kollmann

Robert Fehler

Johannes Lodermeyer

Vincenzo Fiore

Harald Bachhofer

Annette Sänger

Wolfgang H&ouml;nlein

Dana Pitzer

Ulrich Moeller

Josef Hirtreiter

Robert Primig

Mehran Pour Mousavi

Joseph Page

Juergen Foerster

Andreas Stueckjuergen

Michael Röhner

Hans Cerva

Franz Winterauer

Chiara Mariotti

Manfred M&ouml;rt

Carlos Mazure

Emanuele Stavagna

Arif Roni

Jonathan Davis

Birgit Hebler

Sebastian Pahlke

A chip package includes a chip configured to generate and/or receive a signal; a laminate substrate including a substrate integrated waveguide (SIW) for carrying the signal, the substrate integrated waveguide including a chip-to-SIW transition structure configured to couple the signal between the SIW and the chip and a SIW-to-waveguide transition structure configured to couple the signal out of the SIW or into the SIW, wherein the SIW-to-waveguide transition structure includes a waveguide aperture; and a plurality of electrical interfaces arranged about a periphery of the waveguide aperture, the plurality of electrical interfaces configured to receive the signal from the SIW-to-waveguide transition structure and output the signal from the chip package or to couple the signal to the SIW-to-waveguide transition structure and into the chip package.

Chip package with substrate integrated waveguide and waveguide interface

A semiconductor device includes a semiconductor chip including an electrical contact arranged on a main surface of the semiconductor chip, an external connection element configured to provide a first electrical connection between the semiconductor device and a printed circuit board, and an electrical redistribution layer extending in a direction parallel to the main surface of the semiconductor chip and configured to provide a second electrical connection between the electrical contact of the semiconductor chip and the external connection element. The electrical redistribution layer includes a ground line connected to a ground potential and a signal line configured to carry an electrical signal having a wavelength.

Semiconductor devices comprising electrical redistribution layer along with ground line and signal line and methods for manufacturing thereof

A radio-frequency device comprises a printed circuit board and a radio-frequency package, which is mounted on the printed circuit board at a first mounting point and has a radio-frequency chip and a radio-frequency radiation element, wherein the printed circuit board has a first elasticity at least in a first section comprising the first mounting point. The radio-frequency device further comprises a waveguide component, which is mounted on the printed circuit board at a second mounting point and has a waveguide, wherein the radio-frequency radiation element is configured to radiate signals into the waveguide and/or to receive signals by way of the waveguide. The printed circuit board has a second elasticity at least in a second section with an increased elasticity between the first mounting point and the second mounting point, wherein the second elasticity is higher than the first elasticity.

Radio-frequency devices and associated production methods

A radio-frequency device comprises an encapsulation material and a radio-frequency chip embedded into the encapsulation material, wherein the radio-frequency chip has a first main surface and a second main surface. The radio-frequency device furthermore comprises an electrical redistribution layer arranged over the first main surface of the radio-frequency chip and the encapsulation material, and a radio-frequency antenna formed in the redistribution layer and configured to emit signals in a direction pointing from the second main surface to the first main surface and/or to receive signals in a direction pointing from the first main surface to the second main surface. The radio-frequency device furthermore comprises a microwave component having an electrically conductive wall structure, the microwave component being arranged below the radio-frequency antenna and embedded into the encapsulation material.

RF devices including an RF chip having an electrical redistribution layer with RF antennas formed therein and methods of manufacture

A semiconductor device including an Integrated Circuit (IC) package and a plastic waveguide. The IC package includes a semiconductor chip; and an embedded antenna formed within a Redistribution Layer (RDL) coupled to the semiconductor chip, wherein the RDL is configured to transport a Radio Frequency (RF) signal between the semiconductor chip and the embedded antenna. The plastic waveguide is attached to the IC package and configured to transport the RF signal between the embedded antenna and outside of the IC package.

Semiconductor package with plastic waveguide

A semiconductor device comprises a semiconductor chip having a radio-frequency circuit and a radio-frequency terminal, an external radio-frequency terminal, and a non-galvanic connection arranged between the radio-frequency terminal of the semiconductor chip and the external radio-frequency terminal, wherein the non-galvanic connection is designed to transmit a radio-frequency signal.

Semiconductor devices having a non-galvanic connection

A method comprises providing a least one semiconductor component, wherein each of the at least one semiconductor component comprises: a semiconductor chip, wherein the semiconductor chip comprises a first main surface and a second main surface opposite the first main surface, and a sacrificial layer arranged above the opposite second main surface of the semiconductor chip. The method further comprises encapsulating the at least one semiconductor component with an encapsulation material. The method further comprises removing the sacrificial material, wherein above each of the at least one semiconductor chip a cutout is formed in the encapsulation material. The method further comprises arranging at least one lid above the at least one cutout, wherein a closed cavity is formed by the at least one cutout and the at least one lid above each of the at least one semiconductor chip.

Semiconductor devices having cutouts in an encapsulation material and associated production methods

An electronic device is disclosed. In one example, the electronic device includes a solder ball, a dielectric layer comprising an opening, and a redistribution layer (RDL) comprising an RDL pad connected with the solder ball. The RDL pad including at least one void, the void being disposed at least in partial in an area of the RDL pad laterally outside of the opening of the dielectric layer.

Electronic device including redistribution layer pad having a void

A chip carrier for carrying an encapsulated electronic chip, wherein the chip carrier comprises a laminate structure formed as a stack of a plurality of electrically insulating structures and a plurality of electrically conductive structures, and a chip coupling area at an exposed surface of the laminate structure being configured for electrically and mechanically coupling the encapsulated electronic chip, wherein one of the electrically insulating structures is configured as high frequency dielectric made of a material being compatible with low-loss transmission of a high-frequency signal, and wherein at least one of another one of the electrically insulating structures and one of the electrically conductive structures is configured as a thermomechanical buffer for buffering thermally induced mechanical load.

Chip carrier laminate with high frequency dielectric and thermomechanical buffer

A method for manufacturing an embedded chip package is provided. The method may include: forming electrically conductive lines over a substrate; placing the substrate next to a chip arrangement comprising a chip, the chip comprising one or more contact pads, wherein one or more of the electrically conductive lines are arranged proximate to a side wall of the chip; and forming one or more electrical interconnects over the chip arrangement to electrically connect at least one electrically conductive line to at least one contact pad.

Embedded chip packages and methods for manufacturing an embedded chip package

A method of manufacturing a semiconductor device package includes placing a semiconductor chip on a carrier, covering the semiconductor chip with an encapsulation material to form an encapsulation body, providing a microwave component having at least one electrically conducting wall structure integrated in the encapsulation body, and forming an electrical interconnect configured to electrically couple the semiconductor chip and the microwave component.

Method of manufacturing a semiconductor package having a semiconductor chip and a microwave component

A wireless communication system includes a first semiconductor module and a second semiconductor module. The first semiconductor module includes a semiconductor die connected to an antenna structure. The semiconductor die of the first semiconductor module and the antenna structure of the first semiconductor module are arranged within a common package. The semiconductor die of the first semiconductor module includes a transmitter module configured to transmit the wireless communication signal through the antenna structure of the first semiconductor module. The second semiconductor module includes a semiconductor die connected to an antenna structure. The semiconductor die of the second semiconductor module includes a receiver module configured to receive the wireless communication signal through the antenna structure of the second semiconductor module from the first semiconductor module.

Wireless communication system, a radar system and a method for determining a position information of an object

A method of manufacturing an array of semiconductor device packages includes placing a plurality of semiconductor chips on a temporary carrier, covering the plurality of semiconductor chips with an encapsulation material to form an encapsulation body, providing a plurality of microwave components each including at least one electrically conducting wall structure integrated in the encapsulation body, forming a plurality of electrical interconnects each configured to electrically couple a semiconductor chip and a microwave component, and separating the encapsulation body into single semiconductor device packages each including a semiconductor chip, a microwave component and an electrical interconnect.

Method of manufacturing a semiconductor package having an integrated microwave component

A microwave device includes a semiconductor package comprising a microwave semiconductor chip and a waveguide part associated with the semiconductor package. The waveguide part is configured to transfer a microwave waveguide signal. It includes one or more pieces. The microwave device further includes a transformer element configured to transform a microwave signal from the microwave semiconductor chip into the microwave waveguide signal or to transform the microwave waveguide signal into a microwave signal for the microwave semiconductor chip.

Transition between a plastic waveguide and a semiconductor chip, where the semiconductor chip is embedded and encapsulated within a mold compound

Growing community of inventors

Glen Allen, VA, United States of America

Walter Hartner