Balzers Aktiengesellschaft

Unaxis-balzers Aktiengesellschaft

Unaxis Trading Ag

Unaxis Balzers Limited

Other

Oc Oerlikon Balzers Ag

Balzers Hochvakuum Ag

Oerlikon Solar IP Ag, Trubbach

Unakis Trading Ag

Glas Troesch Holding Ag

Balzers Aktiengtesellschaft

Balzers Aktiengsellschaft

Glas Trosch Holding Ag

Walter Haag

Pius Gruenenfelder

Siegfried Krassnitzer

Urs Schwendener

Pius Grunenfelder

Helmut Rudigier

Hans Hirscher

Klaus Wellerdieck

Hans Signer

Markus Schlegel

Stanislav Kadlec

Eduard Kugler

Martin Dubs

Helmut Daxinger

Thomas Eisenhammer

Eduard Kügler

Walter Albertin

Bernd Heinz

Roman Schertler

Urs Wegmann

Eberhard Moll

Hans K Pulker

Andriy Romanyuk

Pascal Meier

Peter Kohler

Klaus Leitner

Peter Buechel

Eduard K{umlaut Over (u)}gler

The invention relates to an object having a coating arranged on at least one surface of the object, which comprises at least one antimicrobially active layer having an antimicrobial agent, wherein the agent comprises a copper (I) compound and/or a copper (II) compound.

Antimicrobial glass coating

A magnetron source, a magnetron treatment chamber, and a method of manufacturing substrates with a vacuum plasma treated surface, generate and exploit on asymmetrically unbalanced long-range magnetron magnetic field pattern which is swept along the substrate surface for improving the ion density at a substrate surface being vacuum plasma treated. The long-range field reaches the substrate surface with a component of the magnetic field parallel to the substrate surface of at least 0.1, and preferably between 1 and 20, Gauss. The plasma treating can be sputter-coating, or etching, for example.

Method for manufacturing sputter-coated substrates, magnetron source and sputtering chamber with such source

A magnetron sputtering source includes a plurality of electrodes and a switching circuit. The switching circuit sequentially connects each of the plurality of electrodes to a ground reference, making it anodic, while connecting the remaining of the plurality of electrodes as cathodes. A method of operating the magnetron sputtering source includes steps of: providing a plurality of target arrangements; causing each of the plurality of target arrangements to act as a cathode; and sequentially causing each of the plurality of cathodes to temporarily act as an anode.

Sliding anode magnetron sputtering source

A method of manufacturing an object in a vacuum treatment apparatus having a vacuum recipient for containing an atmosphere, includes the steps of supporting a substrate on a work piece carrier arrangement in the recipient and treating the substrate to manufacture the object in the vacuum recipient. The treating process includes generating electrical charge carriers in the atmosphere and in the recipient which are of the type that form electrically insulating material and providing at least two electroconductive surfaces in the recipient. Power, such as a DC signal, is supplied to at least one of the electroconductive surfaces so that at least one of the electroconductive surfaces receives the electrically insulating material for covering at least part of that electroconductive surface. This causes electrical isolation of that electroconductive surface which leads to arcing and damage to the object. A control signal is applied to the electroconductive surfaces during repeating and alternating first time spans and second time spans, for prevent arcing at the part of the electroconductive surfaces which is, or is becoming electrically isolated from the atmosphere by being covered by the electrical charge carriers.

Method of manufacturing an object in a vacuum recipient

A workpiece is manufactured using a magnetron source that has an optimized yield of sputtered-off material as well as service life of the target. Good distribution values of the layer on the workpiece are obtained that are stable over the entire target service life, and a concave sputter face in a configuration with small target-to-workpiece distance is combined with a magnet system to form the magnetron electron trap in which the outer pole of the magnetron electron trap is stationary and an eccentrically disposed inner pole with a second outer pole part is rotatable about the central source axis.

Method for manufacturing a workpiece using a magnetron sputter source

For optimizing the yield of atomized-off material on a magnetron atomization source, a process space, on the source side, is predominantly walled by the atomization surface of the target body. The magnetron atomization source has a target body with a mirror-symmetrical, concavely constructed atomization surface with respect to at least one plane and a magnetic circuit arrangement operable to generate a magnetic field over the atomization surface. The magnetic circuit arrangement includes an anode arrangement, a receiving frame which extends around an edge of the target body and is electrically insulated with respect thereto. The receiving frame has a receiving opening for at least one workpiece to be coated. The magnetron source can be used to provide storage disks, such as CDs, with an atomization coating.

Magnetron atomization source and method of use thereof

To optimize the yield of sputtered-off material as well as the service life of the target on a magnetron source, in which simultaneously good attainable distribution values of the layer on the substrate, stable over the entire target service life, a concave sputter face in a configuration with small target-substrate distance d is combined with a magnet system to form the magnetron electron trap in which the outer pole of the magnetron electron trap is disposed stationarily and an eccentrically disposed inner pole with a second outer pole part is developed rotatable about the central source axis

Magnetron sputter source

A method for producing flat panels for TFT or plasma display applications includes forming a sputter source within a sputter coating chamber, the source having at least two electrically mutually isolated stationery bar-shaped target arrangements. A controlled magnet arrangement provided under each target with a time-varying magnetron field.

Method of producing flat panels

Magnetron sputtering source and method of use thereof

A sputter source has at least two electrically mutually isolated stationar bar-shaped target arrangements mounted one alongside the other and separated by respective slits. Each of the target arrangements includes a respective electric pad so that each target arrangement may be operated electrically independently from the other target arrangement. Each target arrangement also has a controlled magnet arrangement for generating a time-varying magnetron field upon the respective target arrangement. The magnet arrangements may be controlled independently from each others. The source further has an anode arrangement with anodes alongside and between the target arrangements and/or along smaller sides of the target arrangements.

Magnetron sputtering source

Two mutually opposite sputtering surfaces of at least one target are self-enclosed such that a closed loop gap, and consequently a closed loop plasma discharge space, is formed. A gas flow is created between the sputtering surface and directed against workpieces. No gap ends exist on the closed loop gap so that electrons that move along and within the plasma loop can recirculate until most of their energy has been transferred through impacts to the gas particles.

Process for sputter coating, a sputter coating source, and sputter coating apparatus with at least one such source

A vacuum treatment apparatus (FIG. 13) includes a vacuum recipient or chamber (3) for containing an atmosphere. A mechanism (50,52) for generating electrical charge carriers in the atmosphere is provided in the recipient, the electrical charge carriers being of the type that form electrically isolating material. The recipient also contains a work piece carrier arrangement (1) and at least two electroconductive surfaces (2a, 2b) which are mutually electrically isolated from each other. A DC power supply (8) is operationally connected to the electroconductive surfaces by respective electrical conductors with an inductor (L.sub.66) in one of the conductors. A parallel switching arrangement is connected between the electrical conductors to control a current path between the conductors.

Vacuum treatment apparatus

A sputter source has at least two electrically mutually isolated stationary bar-shaped target arrangements mounted one alongside the other and separated by respective slits. Each of the target arrangements includes a respective electric pad so that each target arrangement may be operated electrically independently from the other target arrangement. Each target arrangement also has a controlled magnet arrangement for generating a time-varying magnetron field upon the respective target arrangement. The magnet arrangements may be controlled independently from each other. The source further has an anode arrangement with anodes alongside and between the target arrangements and/or along smaller sides of the target arrangements.

Growing community of inventors

Grabs, Switzerland

Walter Haag