Robert Boschgmbh

Walter Daves

Christoph Schelling

Martin Rittner

Michael Badeja

Michael Guenther

Knut Alexander Kasper

Silvia Duernsteiner

A pressure sensor has a substrate and a transistor structure. The substrate has a cavity formed in the substrate. The transistor structure is arranged above the cavity. The transistor structure has a flexible heterostructure and at least one source contact, drain contact, and gate contact each connected to the heterostructure in an electrically conductive manner. The heterostructure is configured to assume a position corresponding to a pressure ratio between a first pressure in the cavity and a second pressure on a side of the heterostructure opposite the cavity. The transistor structure is configured to provide an electrical signal corresponding to the position.

Pressure sensor and method for producing the pressure sensor

A commutation cell having at least one electrical capacitor, at least one controllable semiconductor switch and at least one semiconductor which is connected in series with the controllable semiconductor switch. The commutation cell has three circuit substrates situated in parallel with one another. The controllable semiconductor switch is connected in series with the semiconductor via a circuit substrate situated partially between the controllable semiconductor switch and the semiconductor, and the two remaining circuit substrates being connected to one another in an electrically conductive manner via a subassembly made up of the controllable semiconductor switch, the semiconductor and the circuit substrate situated partially between the controllable semiconductor switch and the semiconductor, the electrical capacitor being switched between the two remaining circuit substrates, separately from the subassembly.

Commutation cell

A vertical microelectronic component includes a semiconductor substrate having a front side and a back side, and a multiplicity of fins formed on the front side. Each fin has a side wall and an upper side and is separated from other fins by trenches. Each fin includes a GaN/AlGaN heterolayer region formed on the side wall and including a channel region extending essentially parallel to the side wall. Each fin includes a gate terminal region arranged above the GaN/AlGaN heterolayer region and electrically insulated from the channel region in the associated trench on the side wall. A common source terminal region arranged above the fins is connected to a first end of the channel region in a vicinity of the upper sides. A common drain terminal region arranged above the back side is connected to a second end of the channel region in a vicinity of the front side.

Growing community of inventors

Singapore, Singapore

Walter Daves