Texas Instruments Corporation

Texas Instruments Deustchland Gmbh

Walter Bucksch

Marco Corsi

Donald Charles Abbott

Taylor R Efland

Louis N Hutter

Chi-Cheong Shen

John P Erdeljac

Charles E Williams

Konrad Wagensohner

Quang X Mai

Erich Bayer

Kevin Scoones

Milton Lee Buschbom

Frank R Fattori

Anton Vorel

An integrated circuit device ( ) with a bonding surface ( ) directly over its active circuitry, and a method of making such integrated circuits (FIGS. A- E). To make the bonding surface ( ), a wafer ( ) is provided with vias ( ) to its metallization layer ( ) and then coated with a seed metal layer ( ). A plating pattern ( ) is formed on the wafer ( ), exposing portions of the seed metal layer ( ) and blocking the rest of the seed metal layer ( ). These exposed portions are plated with successive metal layers ( ), thereby forming a bonding surface ( ) having a number of layered stacks ( ) that fill the vias ( ). The plating pattern and the nonplated portions of the seed metal layer ( ) are then removed.

Integrated circuit with bonding layer over active circuitry

An integrated circuit device (10) with a bonding surface (12) directly over its active circuitry, and a method of making such integrated circuits (FIGS. 2A 2E). To make the bonding surface (12), a wafer (20) is provided with vias (24) to its metallization layer (21) and then coated with a seed metal layer (25). A plating pattern (26) is formed on the wafer (20), exposing portions of the seed metal layer (25) and blocking the rest of the seed metal layer (25). These exposed portions are plated with successive metal layers (27, 28, 29), thereby forming a bonding surface (12) having a number of layered stacks (200) that fill the vias (24). The plating pattern and the nonplated portions of the seed metal layer (25) are then removed.

A high power MOS transistor consists of a large number of sub-transistors (T1 to T6) connected in parallel. The gate electrodes of the sub-transistors (T1 to T6) can be driven individually via controllable switching elements (SW1 to SW6; SQ1 to SQ5).

High power MOS transistor

Integrated voltage divider comprising partial resistors (R1 ,R2) formed of paths of polycrystalline semiconductor material applied over a dielectric layer (4) on a semiconductor substrate (5). Under the paths, each forming a partial resistor (R1,R2) in the semiconductor substrate (5), a well (6 and 7 respectively) is formed having a conductivity type opposite to the conductivity type of the semiconductor substrate (5). The total surfaces of the paths forming the partial resistors (R1,R2) are dimensioned so that their ratio equals the inverse ratio of the resistor values of the two partial resistors (R1 ,R2).

Integrated voltage divider

The invention relates to an integrated transistor circuit comprising a transistor (Q1) of which the collector is connected to an input of a circuit (S) and between the base and collector of which an antisaturation diode (D1) is connected. According to the invention a further current branch is provided between the base and the emitter and includes a series circuit of a diode (D2) and a resistor (R1). As a result, a leakage current flowing in reverse direction into the antisaturation diode (D1) flows via the diode (D2) and the resistor (R1) and not via the emitter-base path of the transistor (Q1) and consequently amplification of the leakage current is prevented.

Integrated transistor circuit

A protective circuit arrangement is described for protecting semiconductor components connected to input and output terminals (10) against overvoltages in bipolar integrated circuits. The circuit arrangement contains at least one supply voltage terminal (12) and a ground terminal (14). Between the ground terminal (14) and at least the input and output terminals (10) which are connected to components sensitive to overvoltage a thyristor-tetrode (22) having a first control electrode (28) and a second control electrode (30) is inserted, the first control electrode (28) being connected to a line (18) which in the operative state of the integrated circuit lies at a voltage above the ground potential and the second control electrode (30) being connected to the ground terminal 14.

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Freising, Germany

Walter Bucksch