Georgia Tech Research Corporation

Walt A De Heer

Michael Sprinkle

Seth R Marder

Xuebin Li

Simon Christopher Jones

Clifford Lee Henderson

Takashi Okada

Claire Berger

Jennifer E Curtis

Xiaosong Wu

Debin Wang

Yueming Hua

Elisa Riedo

Robert J Szoskiewicz

Vamsi K Kodali

A transistor includes a silicon carbide crystal () having a silicon terminated face (). A semiconducting-type graphene layer () is bonded to the silicon terminated face (). A first semimetallic-type graphene layer () is contiguous with a first portion of the semiconducting-type graphene layer (). A second semimetallic-type graphene layer () is contiguous with a second portion of the semiconducting-type graphene layer () that is spaced apart from the first portion. An insulator layer () is disposed on a portion of the semiconducting-type graphene layer (). A gate conductive layer () disposed on the insulator layer () and spaced apart from the semiconducting-type graphene layer ().

Graphene transistor

In a method for making graphitic ribbons in a face of a carbide crystal (), in which an elongated trench () is formed along a predetermined path in the face () of the carbide crystal (), the trench () including a horizontal floor () coupling two vertical walls (), the trench () following a path on which it is desired to form a graphitic ribbon (). The carbide crystal () and the trench () are subjected to an annealing environment for an amount of time sufficient to cause a graphene ribbon () having a V-shaped cross section to form along the predetermined path of the trench ().

Patterned graphene structures on silicon carbide

Improved nanolithography components, systems, and methods are described herein. The systems and methods generally employ a resistively heated atomic force microscope tip to thermally induce a chemical change in a surface. In addition, certain polymeric compositions are also disclosed.

Thermochemical nanolithography components, systems, and methods

In a method of producing ultra-thin graphitic layers, a carbide crystal is placed into a graphitic enclosure. The carbide crystal and the graphitic enclosure are placed into a chamber. The carbide crystal and the graphitic enclosure are subjected to a predetermined environment. Once the predetermined environment is established, the carbide crystal and the graphitic enclosure are heated to a first temperature for a predetermined period of time sufficient to cause at least one non-carbon element to evaporate from a crystal face of the carbide crystal so as to form at least one graphitic layer on the crystal face of the carbide crystal.

Method and apparatus for producing ultra-thin graphitic layers

In a method of making a functionalized graphitic structure, a portion of a multi-layered graphene surface extending from a silicon carbide substrate is exposed to an acidic environment so as to separate graphene layers in a portion of the multi-layered graphene surface. The portion of the multi-layered graphene surface is exposed to a functionalizing material that binds to carbon atoms in the graphene sheets so that the functionalizing material remains between the graphene sheets, thereby generating a functionalized graphitic structure. The functionalized graphitic structure is dried in an inert environment.

Method and apparatus for producing graphene oxide layers on an insulating substrate

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Atlanta, GA, United States of America

Walt A De Heer