Texas Instruments Corporation

Wallace W Martin

Byron Lovell Williams

Jose L Melendez

Darius Lammont Crenshaw

Yu-Pei Chen

A Micro Electro-Mechanical System (MEMS) switch ( ) having a bottom electrode ( ) formed over a substrate ( ) and a thin protective cap layer ( ) disposed over the bottom electrode ( ). A dielectric material ( ) is disposed over the protective cap layer ( ) and a pull-down electrode ( ) is formed over the spacer ( ) and the dielectric material ( ). The protective cap layer ( ) prevents the oxidation of the bottom electrode ( ). The thin protective cap layer ( ) comprises a metal having an associated oxide with a high dielectric constant. A portion ( ) of the thin protective cap layer ( ) may oxidize during the formation of the dielectric material ( ), increasing the capacitance of the dielectric stack ( ).

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Richardson, TX, United States of America

Wallace W Martin